IRF630NLPBF

IRF630NLPBF
Mfr. #:
IRF630NLPBF
Manufacturer:
Infineon / IR
Description:
MOSFET MOSFT 200V 9.5A 300mOhm 23.3nC
Lifecycle:
New from this manufacturer.
Datasheet:
IRF630NLPBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF630NLPBF DatasheetIRF630NLPBF Datasheet (P4-P6)IRF630NLPBF Datasheet (P7-P9)IRF630NLPBF Datasheet (P10-P11)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-262-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
200 V
Id - Continuous Drain Current:
9.3 A
Rds On - Drain-Source Resistance:
300 mOhms
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
23.3 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
82 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Height:
9.45 mm
Length:
10.2 mm
Transistor Type:
1 N-Channel
Width:
4.5 mm
Brand:
Infineon / IR
Forward Transconductance - Min:
4.9 S
Fall Time:
15 ns
Product Type:
MOSFET
Rise Time:
14 ns
Factory Pack Quantity:
50
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
27 ns
Typical Turn-On Delay Time:
7.9 ns
Part # Aliases:
SP001559690
Unit Weight:
0.084199 oz
Tags
IRF630N, IRF630, IRF63, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ernational Rectifier
200V Single N-Channel HEXFET Power MOSFET in a TO-262 package
***et
Trans MOSFET N-CH 200V 9.3A 3-Pin(3+Tab) TO-262
***ied Electronics & Automation
MOSFET, 200V, 9.5A, 300 MOHM, 23.3 NC QG, TO-262
***i-Key
MOSFET N-CH 200V 9.3A TO-262
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:9.5A; On Resistance, Rds(on):300mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
Part # Mfg. Description Stock Price
IRF630NLPBF
DISTI # IRF630NLPBF-ND
Infineon Technologies AGMOSFET N-CH 200V 9.3A TO-262
RoHS: Compliant
Min Qty: 600
Container: Tube
Limited Supply - Call
    IRF630NLPBF
    DISTI # 70018226
    Infineon Technologies AGMOSFET,200V,9.5A,300 MOHM,23.3 NC QG,TO-262
    RoHS: Compliant
    0
    • 600:$1.8300
    • 1200:$1.7930
    • 3000:$1.7390
    • 6000:$1.6650
    • 15000:$1.5560
    IRF630NLPBF
    DISTI # 942-IRF630NLPBF
    Infineon Technologies AGMOSFET MOSFT 200V 9.5A 300mOhm 23.3nC
    RoHS: Compliant
    0
      Image Part # Description
      IRF634L

      Mfr.#: IRF634L

      OMO.#: OMO-IRF634L-VISHAY

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      IRF634NL

      Mfr.#: IRF634NL

      OMO.#: OMO-IRF634NL-1190

      New and Original
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      OMO.#: OMO-IRF630BTSTU-FP001-ON-SEMICONDUCTOR

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      OMO.#: OMO-IRF630N-1190

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      Mfr.#: IRF634B,IRF634FP,IRF640,

      OMO.#: OMO-IRF634B-IRF634FP-IRF640--1190

      New and Original
      IRF634N

      Mfr.#: IRF634N

      OMO.#: OMO-IRF634N-1190

      MOSFET N-Chan 250V 8.0 Amp
      IRF630NLPBF

      Mfr.#: IRF630NLPBF

      OMO.#: OMO-IRF630NLPBF-INFINEON-TECHNOLOGIES

      IGBT Transistors MOSFET MOSFT 200V 9.5A 300mOhm 23.3nC
      IRF634

      Mfr.#: IRF634

      OMO.#: OMO-IRF634-STMICROELECTRONICS

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      Availability
      Stock:
      Available
      On Order:
      4000
      Enter Quantity:
      Current price of IRF630NLPBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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