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IRF6626TR1PBF

IRF6626TR1PBF
Mfr. #:
IRF6626TR1PBF
Manufacturer:
Infineon / IR
Description:
MOSFET 30V N-CH 4.0 mOhm HEXFET 1.8V nC
Lifecycle:
New from this manufacturer.
Datasheet:
IRF6626TR1PBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF6626TR1PBF DatasheetIRF6626TR1PBF Datasheet (P4-P6)IRF6626TR1PBF Datasheet (P7-P9)IRF6626TR1PBF Datasheet (P10)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
DirectFET-ST
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
16 A
Rds On - Drain-Source Resistance:
7.1 mOhms
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
19 nC
Pd - Power Dissipation:
42 W
Configuration:
Single
Packaging:
Reel
Height:
0.7 mm
Length:
4.85 mm
Transistor Type:
1 N-Channel
Width:
3.95 mm
Brand:
Infineon / IR
Moisture Sensitive:
Yes
Product Type:
MOSFET
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Part # Aliases:
SP001530896
Tags
IRF6626T, IRF6626, IRF662, IRF66, IRF6, IRF
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 30V 16A 7-Pin Direct-FET ST T/R
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:13A; On Resistance, Rds(on):4mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET ST ;RoHS Compliant: Yes
***ernational Rectifier
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET ST package rated at 72 amperes optimized with low on resistance for applications such as active OR’ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***nell
MOSFET, N, DIRECTFET, 30V, ST; Transistor Type:Power MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:16A; Resistance, Rds On:4mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.35V; Case Style:ST; Termination Type:SMD; Base Number:6626; Current, Idm Pulse:130A; Power Dissipation:2.2mW; SMD Marking:2.2; Voltage, Vds:30V; Voltage, Vgs th Max:2.35V; Voltage, Vgs th Min:1.35V
Part # Mfg. Description Stock Price
IRF6626TR1PBF
DISTI # IRF6626TR1PBFTR-ND		Infineon Technologies AGMOSFET N-CH 30V 16A DIRECTFET
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    IRF6626TR1PBF
    DISTI # IRF6626TR1PBFCT-ND    		Infineon Technologies AGMOSFET N-CH 30V 16A DIRECTFET
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      IRF6626TR1PBF
      DISTI # IRF6626TR1PBFDKR-ND      		Infineon Technologies AGMOSFET N-CH 30V 16A DIRECTFET
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        IRF6626TR1PBF
        DISTI # 70018834        		Infineon Technologies AG30V SINGLE N-CHANNEL HEXFET POWER MOSFET,DIRECTFET ST PKG
        RoHS: Compliant        		0
        • 1000:$1.8500
        • 2000:$1.7000
        IRF6626TR1PBF
        DISTI # 942-IRF6626TR1PBF        		Infineon Technologies AGMOSFET 30V N-CH 4.0 mOhm HEXFET 1.8V nC
        RoHS: Compliant        		0
          IRF6626TR1
          DISTI # 942-IRF6626TR1          		Infineon Technologies AGMOSFET 30V N-CH 4.0 mOhm HEXFET 1.8V nC
          RoHS: Not compliant          		0
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            Availability
            Stock:
            Available
            On Order:
            3000
            Enter Quantity:
            Current price of IRF6626TR1PBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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