BSC042NE7NS3 G

BSC042NE7NS3 G
Mfr. #:
BSC042NE7NS3 G
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 75V 100A TDSON-8 OptiMOS 3
Lifecycle:
New from this manufacturer.
Datasheet:
BSC042NE7NS3 G Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
BSC042NE7NS3 G more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TDSON-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
75 V
Id - Continuous Drain Current:
100 A
Rds On - Drain-Source Resistance:
3.7 mOhms
Vgs th - Gate-Source Threshold Voltage:
2.3 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
69 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
125 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
Reel
Height:
1.27 mm
Length:
5.9 mm
Series:
OptiMOS 3
Transistor Type:
1 N-Channel
Type:
OptiMOS 3 Power-Transistor
Width:
5.15 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
44 S
Fall Time:
9 ns
Product Type:
MOSFET
Rise Time:
17 ns
Factory Pack Quantity:
5000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
34 ns
Typical Turn-On Delay Time:
14 ns
Part # Aliases:
BSC042NE7NS3GATMA1 BSC42NE7NS3GXT SP000657440
Unit Weight:
0.003527 oz
Tags
BSC042NE7NS3G, BSC042NE, BSC042, BSC04, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
CoolMOS™ N-Channel MOSFETs
Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Part # Mfg. Description Stock Price
BSC042NE7NS3GATMA1
DISTI # V72:2272_06383128
Infineon Technologies AGTrans MOSFET N-CH 75V 19A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant
927
  • 500:$1.2890
  • 250:$1.4496
  • 100:$1.4650
  • 25:$1.7711
  • 10:$1.7914
  • 1:$2.0551
BSC042NE7NS3GATMA1
DISTI # BSC042NE7NS3GATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 75V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
4703In Stock
  • 1000:$1.3445
  • 500:$1.6227
  • 100:$2.0863
  • 10:$2.5960
  • 1:$2.8700
BSC042NE7NS3GATMA1
DISTI # BSC042NE7NS3GATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 75V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
4703In Stock
  • 1000:$1.3445
  • 500:$1.6227
  • 100:$2.0863
  • 10:$2.5960
  • 1:$2.8700
BSC042NE7NS3GATMA1
DISTI # BSC042NE7NS3GATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 75V 100A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
On Order
  • 5000:$1.1703
BSC042NE7NS3GATMA1
DISTI # 31038113
Infineon Technologies AGTrans MOSFET N-CH 75V 19A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant
5000
  • 5000:$1.1424
BSC042NE7NS3G
DISTI # 30579779
Infineon Technologies AGTrans MOSFET N-CH 75V 19A 8-Pin TDSON EP
RoHS: Compliant
3922
  • 23:$1.0570
BSC042NE7NS3GATMA1
DISTI # 26195121
Infineon Technologies AGTrans MOSFET N-CH 75V 19A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant
927
  • 500:$1.2890
  • 250:$1.4496
  • 100:$1.4650
  • 25:$1.7711
  • 10:$1.7914
  • 6:$2.0551
BSC042NE7NS3 G
DISTI # BSC042NE7NS3 G
Infineon Technologies AGTrans MOSFET N-CH 75V 19A 8-Pin TDSON T/R (Alt: BSC042NE7NS3 G)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel
Asia - 15000
    BSC042NE7NS3GATMA1
    DISTI # BSC042NE7NS3GATMA1
    Infineon Technologies AGTrans MOSFET N-CH 75V 100A TDSON-8 T/R - Tape and Reel (Alt: BSC042NE7NS3GATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel
    Americas - 0
    • 5000:$1.1789
    • 10000:$1.1359
    • 20000:$1.0949
    • 30000:$1.0579
    • 50000:$1.0389
    BSC042NE7NS3GATMA1
    DISTI # 79X1331
    Infineon Technologies AGMOSFET, N-CH, 75V, 100A, PG-TDSON- 8,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:75V,On Resistance Rds(on):0.0037ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.1V RoHS Compliant: Yes4835
    • 1:$2.4100
    • 10:$2.0500
    • 25:$1.9100
    • 50:$1.7800
    • 100:$1.6400
    • 250:$1.5400
    • 500:$1.4400
    • 1000:$1.1900
    BSC042NE7NS3 G
    DISTI # 726-BSC042NE7NS3GXT
    Infineon Technologies AGMOSFET N-Ch 75V 100A TDSON-8 OptiMOS 3
    RoHS: Compliant
    6496
    • 1:$2.4100
    • 10:$2.0500
    • 100:$1.6400
    • 500:$1.4400
    • 1000:$1.1900
    BSC042NE7NS3GATMA1
    DISTI # 726-BSC042NE7NS3GATM
    Infineon Technologies AGMOSFET N-Ch 75V 100A TDSON-8 OptiMOS 3
    RoHS: Compliant
    4940
    • 1:$2.4100
    • 10:$2.0500
    • 100:$1.6400
    • 500:$1.4400
    • 1000:$1.1900
    BSC042NE7NS3GATMA1Infineon Technologies AGSingle N-Channel 75 V 4.2 mOhm 69 nC OptiMOS Power Mosfet - TDSON-8
    RoHS: Not Compliant
    5000Reel
    • 5000:$1.2600
    BSC042NE7NS3GInfineon Technologies AGPower Field-Effect Transistor, 19A I(D), 75V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant
    100
    • 1000:$0.9900
    • 500:$1.0400
    • 100:$1.0800
    • 25:$1.1300
    • 1:$1.2200
    BSC042NE7NS3 GInfineon Technologies AG 
    RoHS: Not Compliant
    4938
    • 1000:$0.9900
    • 500:$1.0400
    • 100:$1.0800
    • 25:$1.1300
    • 1:$1.2200
    BSC042NE7NS3GATMA1Infineon Technologies AGPower Field-Effect Transistor, 19A I(D), 75V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant
    8672
    • 1000:$0.9900
    • 500:$1.0400
    • 100:$1.0800
    • 25:$1.1300
    • 1:$1.2200
    BSC042NE7NS3GATMA1
    DISTI # 9064334P
    Infineon Technologies AGMOSFET N-CHANNEL 75V 19A 8-PIN TDSON EP, RL1780
    • 100:£1.1270
    • 500:£0.9530
    • 1000:£0.8170
    • 2500:£0.7870
    BSC042NE7NS3GInfineon Technologies AG19 A, 75 V, 0.0042 ohm, N-CHANNEL, Si, POWER, MOSFET36
    • 12:$1.8000
    • 3:$2.2500
    • 1:$2.7000
    BSC042NE7NS3GInfineon Technologies AG 120
      BSC042NE7NS3GATMA1
      DISTI # 2432706
      Infineon Technologies AGMOSFET, N CH, 75V, 100A, TDSON-8
      RoHS: Compliant
      4835
      • 1:£1.7000
      • 10:£1.4300
      • 100:£1.1300
      • 250:£1.0300
      • 500:£0.9310
      BSC042NE7NS3GATMA1
      DISTI # 2432706RL
      Infineon Technologies AGMOSFET, N CH, 75V, 100A, TDSON-8
      RoHS: Compliant
      0
      • 1:$3.8200
      • 10:$3.2500
      • 100:$2.6000
      • 500:$2.2800
      • 1000:$1.8800
      • 2500:$1.7600
      • 5000:$1.7000
      BSC042NE7NS3GATMA1
      DISTI # 2432706
      Infineon Technologies AGMOSFET, N CH, 75V, 100A, TDSON-8
      RoHS: Compliant
      4835
      • 1:$3.8200
      • 10:$3.2500
      • 100:$2.6000
      • 500:$2.2800
      • 1000:$1.8800
      • 2500:$1.7600
      • 5000:$1.7000
      BSC042NE7NS3 G
      DISTI # C1S322000296077
      Infineon Technologies AGTrans MOSFET N-CH 75V 19A 8-Pin TDSON EP T/R
      RoHS: Compliant
      3922
      • 10:$0.8290
      • 5:$0.8880
      BSC042NE7NS3GATMA1
      DISTI # C1S322000598841
      Infineon Technologies AGTrans MOSFET N-CH 75V 19A Automotive 8-Pin TDSON EP T/R
      RoHS: Compliant
      927
      • 250:$1.4503
      • 100:$1.5021
      • 25:$1.7999
      • 10:$1.8058
      • 1:$2.0552
      BSC042NE7NS3GATMA1
      DISTI # C1S322000255265
      Infineon Technologies AGTrans MOSFET N-CH 75V 19A Automotive 8-Pin TDSON EP T/R
      RoHS: Compliant
      5000
      • 5000:$1.1400
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      Mfr.#: LP2985-33DBVR

      OMO.#: OMO-LP2985-33DBVR

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      Mfr.#: 5499922-4

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      OMO.#: OMO-IRLR8743TRPBF-INFINEON-TECHNOLOGIES

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      Mfr.#: LP2985-33DBVR

      OMO.#: OMO-LP2985-33DBVR-TEXAS-INSTRUMENTS

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      Mfr.#: ATMEGA2560-16AU

      OMO.#: OMO-ATMEGA2560-16AU-MICROCHIP-TECHNOLOGY

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      Availability
      Stock:
      Available
      On Order:
      1989
      Enter Quantity:
      Current price of BSC042NE7NS3 G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $2.40
      $2.40
      10
      $2.04
      $20.40
      100
      $1.63
      $163.00
      500
      $1.43
      $715.00
      1000
      $1.18
      $1 180.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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