TGF2080

TGF2080
Mfr. #:
TGF2080
Manufacturer:
Qorvo
Description:
RF JFET Transistors DC-20GHz NF 1.1dB Gain 11.5dB PAE 56%
Lifecycle:
New from this manufacturer.
Datasheet:
TGF2080 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
TGF2080 more Information
Product Attribute
Attribute Value
Manufacturer
TriQuint (Qorvo)
Product Category
Transistors - FETs, MOSFETs - Single
Series
TGF
Packaging
Tray
Part-Aliases
1098414
Mounting-Style
SMD/SMT
Operating-Temperature-Range
- 65 C to + 150 C
Package-Case
0.41 mm x 0.34 mm x 0.1 mm
Technology
GaAs
Configuration
Dual
Transistor-Type
pHEMT
Gain
11.5 dB
Pd-Power-Dissipation
4.2 W
Maximum-Operating-Temperature
+ 150 C
Minimum-Operating-Temperature
- 65 C
Operating-Frequency
12 GHz
Id-Continuous-Drain-Current
259 mA
Vds-Drain-Source-Breakdown-Voltage
12 V
Forward-Transconductance-Min
309 mS
Vgs-Gate-Source-Breakdown-Voltage
- 7 V
Maximum-Drain-Gate-Voltage
- 12 V
P1dB-Compression-Point
29.5 dBm
Tags
TGF20, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
TGF2080 Discrete GaAs pHEMT
Qorvo TGF2080 is a discrete 800-Micron pHEMT which operates from DC to 20 GHz. TGF2080 is designed using Qorvo’s proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. TGF2080 typically provides 29.5 dBm of output power at P1dB with gain of 11.5 dB and 56% power-added efficiency at 1 dB compression. This performance makes the TGF2080 appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection.Learn More
Triquint GaAs pHEMt Low Noise Amplifiers
TriQuint offers a wide variety of discrete transistor components using TriQuint's state-of-the-art ultra-low-noise 0.13µm pHEMT and 0.25µm E-pHEMT processes. These discrete devices allow customers full control when designing the circuits of low noise amplifiers (LNAs). The various discrete FETs offer NFmin as low as 0.15 dB and are usable up to 22 GHz. Matched pair transistors are also available and are ideal for balanced LNA designs.Learn More
Part # Mfg. Description Stock Price
TGF2080
DISTI # 772-TGF2080
QorvoRF JFET Transistors DC-20GHz NF 1.1dB Gain 11.5dB PAE 56%
RoHS: Compliant
0
  • 100:$9.7400
  • 300:$9.1000
  • 500:$8.5100
  • 1000:$7.9500
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Availability
Stock:
Available
On Order:
3500
Enter Quantity:
Current price of TGF2080 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$11.92
$11.92
10
$11.33
$113.29
100
$10.73
$1 073.25
500
$10.14
$5 068.15
1000
$9.54
$9 540.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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