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IPAW60R180P7SXKSA1

IPAW60R180P7SXKSA1
Mfr. #:
IPAW60R180P7SXKSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET
Lifecycle:
New from this manufacturer.
Datasheet:
IPAW60R180P7SXKSA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220FP-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
18 A
Rds On - Drain-Source Resistance:
145 mOhms
Vgs th - Gate-Source Threshold Voltage:
3 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
25 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
26 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
CoolMOS
Packaging:
Tube
Series:
CoolMOS P7
Transistor Type:
1 N-Channel
Brand:
Infineon Technologies
Fall Time:
8 ns
Product Type:
MOSFET
Rise Time:
12 ns
Factory Pack Quantity:
450
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
85 ns
Typical Turn-On Delay Time:
14 ns
Part # Aliases:
IPAW60R180P7S SP001606072
Unit Weight:
0.068784 oz
Tags
IPAW60R1, IPAW60R, IPAW6, IPAW, IPA
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 650 V 180 mOhm 25 nC CoolMOS™ Power Mosfet - TO-220-3FP
***ark
Mosfet, N-Ch, 600V, 18A, 26W, To-220Fp; Transistor Polarity:n Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.145Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ineon
The 600V CoolMOS P7 is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS 7th generation platform ensure its high efficiency. | Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
Part # Mfg. Description Stock Price
IPAW60R180P7SXKSA1
DISTI # V99:2348_17076741		Infineon Technologies AGTrans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube732
  • 1000:$0.7796
  • 500:$0.9783
  • 100:$1.1157
  • 10:$1.3916
  • 1:$1.7897
IPAW60R180P7SXKSA1
DISTI # V36:1790_17076741		Infineon Technologies AGTrans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube0
  • 450000:$0.6525
  • 225000:$0.6546
  • 45000:$0.8120
  • 4500:$1.0730
  • 450:$1.1150
IPAW60R180P7SXKSA1
DISTI # IPAW60R180P7SXKSA1-ND		Infineon Technologies AGMOSFET N-CHANNEL 650V 18A TO220
RoHS: Compliant
Min Qty: 1
Container: Tube		747In Stock
  • 5400:$0.7645
  • 2700:$0.7939
  • 900:$1.0292
  • 450:$1.1762
  • 25:$1.4704
  • 10:$1.5580
  • 1:$1.7300
IPAW60R180P7SXKSA1
DISTI # 33145420		Infineon Technologies AGTrans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube1350
  • 450:$0.7015
IPAW60R180P7SXKSA1
DISTI # 30354428		Infineon Technologies AGTrans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube732
  • 8:$1.7897
IPAW60R180P7SXKSA1
DISTI # IPAW60R180P7SXKSA1		Infineon Technologies AG600V CoolMOS N-Channel Power MOSFET - Rail/Tube (Alt: IPAW60R180P7SXKSA1)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 4500:$0.7109
  • 2700:$0.7239
  • 1800:$0.7489
  • 900:$0.7769
  • 450:$0.8069
IPAW60R180P7SXKSA1
DISTI # IPAW60R180P7SXKSA1		Infineon Technologies AG600V CoolMOS N-Channel Power MOSFET - Bulk (Alt: IPAW60R180P7SXKSA1)
Min Qty: 491
Container: Bulk		Americas - 0
    IPAW60R180P7SXKSA1
    DISTI # SP001606072    		Infineon Technologies AG600V CoolMOS N-Channel Power MOSFET (Alt: SP001606072)
    RoHS: Compliant
    Min Qty: 45    		Europe - 0
    • 450:€0.6659
    • 270:€0.7169
    • 180:€0.7769
    • 90:€0.8469
    • 45:€1.0359
    IPAW60R180P7SXKSA1
    DISTI # 93AC7083    		Infineon Technologies AGMOSFET, N-CH, 600V, 18A, 26W, TO-220FP,Transistor Polarity:N Channel,Continuous Drain Current Id:18A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.145ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes450
    • 1000:$0.8210
    • 500:$0.9910
    • 100:$1.1300
    • 10:$1.4100
    • 1:$1.6600
    IPAW60R180P7SXKSA1
    DISTI # 726-AW60R180P7SXKSA1    		Infineon Technologies AGMOSFET
    RoHS: Compliant    		1622
    • 1:$1.6400
    • 10:$1.4000
    • 100:$1.1200
    • 500:$0.9810
    • 1000:$0.8130
    IPAW60R180P7SXKSA1Infineon Technologies AG 
    RoHS: Not Compliant    		450
    • 1000:$0.6700
    • 500:$0.7100
    • 100:$0.7400
    • 25:$0.7700
    • 1:$0.8300
    IPAW60R180P7SXKSA1
    DISTI # 2986451    		Infineon Technologies AGMOSFET, N-CH, 600V, 18A, 26W, TO-220FP
    RoHS: Compliant    		450
    • 1000:$1.1300
    • 500:$1.3100
    • 250:$1.4000
    • 100:$1.4900
    • 25:$1.8700
    • 5:$2.0700
    IPAW60R180P7SXKSA1
    DISTI # 2986451    		Infineon Technologies AGMOSFET, N-CH, 600V, 18A, 26W, TO-220FP450
    • 500:£0.7120
    • 250:£0.7620
    • 100:£0.8110
    • 10:£1.0600
    • 1:£1.3500
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    Availability
    Stock:
    Available
    On Order:
    1984
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    Current price of IPAW60R180P7SXKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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