IPB160N04S3-H2

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-263-7

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

40 V

Id - Continuous Drain Current:

160 A

Rds On - Drain-Source Resistance:

2.4 mOhms

Vgs - Gate-Source Voltage:

20 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

214 W

Configuration:

Single

Channel Mode:

Enhancement

Qualification:

AEC-Q101

Tradename:

OptiMOS

Packaging:

Reel

Height:

4.4 mm

Length:

10 mm

Series:

OptiMOS-T

Transistor Type:

1 N-Channel

Width:

9.25 mm

Brand:

Infineon Technologies

Fall Time:

17 ns

Product Type:

MOSFET

Rise Time:

16 ns

Factory Pack Quantity:

1000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

46 ns

Typical Turn-On Delay Time:

30 ns

Part # Aliases:

IPB160N04S3H2ATMA1 IPB16N4S3H2XT SP000254818

Unit Weight:

0.056438 oz

Tags

IPB160N04S3, IPB160N04, IPB160, IPB16, IPB1, IPB