IPP110N20N3 G

IPP110N20N3 G
Mfr. #:
IPP110N20N3 G
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 200V 88A TO220-3 OptiMOS 3
Lifecycle:
New from this manufacturer.
Datasheet:
IPP110N20N3 G Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPP110N20N3 G more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
200 V
Id - Continuous Drain Current:
88 A
Rds On - Drain-Source Resistance:
9.9 mOhms
Vgs th - Gate-Source Threshold Voltage:
2 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
87 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
300 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
Tube
Height:
15.65 mm
Length:
10 mm
Series:
OptiMOS 3
Transistor Type:
1 N-Channel
Width:
4.4 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
71 S
Fall Time:
11 ns
Product Type:
MOSFET
Rise Time:
26 ns
Factory Pack Quantity:
500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
41 ns
Typical Turn-On Delay Time:
18 ns
Part # Aliases:
IPP110N20N3GXKSA1 IPP11N2N3GXK SP000677892
Unit Weight:
0.211644 oz
Tags
IPP110N20N3G, IPP110N20N3, IPP110N2, IPP110, IPP11, IPP1, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
Infineon Automatic Opening Systems
Infineon Automatic Opening Systems incorporate smart sensors, motor controls, supplies and battery management to automate sliding, swing or garage doors, sun blinds and gates. When automated, these doors manage opening actions, avoid unintentional opening, control speed and torque, detect objects along paths and other functions.Learn More
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Part # Mfg. Description Stock Price
IPP110N20N3GXKSA1
DISTI # V99:2348_06377977
Infineon Technologies AGTrans MOSFET N-CH 200V 88A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
400
  • 500:$4.8629
  • 250:$5.2310
  • 100:$5.3430
  • 50:$6.0519
  • 25:$6.2660
  • 10:$6.5990
  • 1:$8.0850
IPP110N20N3GXKSA1
DISTI # V36:1790_06377977
Infineon Technologies AGTrans MOSFET N-CH 200V 88A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
0
  • 500000:$3.6150
  • 250000:$3.6190
  • 50000:$4.0900
  • 5000:$4.9830
  • 500:$5.1360
IPP110N20N3GXKSA1
DISTI # IPP110N20N3GXKSA1-ND
Infineon Technologies AGMOSFET N-CH 200V 88A TO220-3
RoHS: Compliant
Min Qty: 1
Container: Tube
1976In Stock
  • 2500:$3.5299
  • 500:$4.2087
  • 100:$4.8332
  • 25:$5.5664
  • 10:$5.8380
  • 1:$6.4600
IPP110N20N3GXKSA1
DISTI # 33719649
Infineon Technologies AGTrans MOSFET N-CH 200V 88A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
400
  • 2:$8.0850
IPP110N20N3 G
DISTI # IPP110N20N3 G
Infineon Technologies AGTrans MOSFET N-CH 200V 88A 3-Pin TO-220 Tube (Alt: IPP110N20N3 G)
RoHS: Compliant
Min Qty: 500
Container: Tube
Asia - 0
    IPP110N20N3 G
    DISTI # SP000677892
    Infineon Technologies AGTrans MOSFET N-CH 200V 88A 3-Pin TO-220 Tube (Alt: SP000677892)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    Europe - 0
    • 1000:€2.7900
    • 500:€2.9900
    • 100:€3.0900
    • 50:€3.1900
    • 25:€3.2900
    • 10:€3.4900
    • 1:€3.7900
    IPP110N20N3GXK
    DISTI # IPP110N20N3GXKSA1
    Infineon Technologies AGTrans MOSFET N-CH 200V 88A 3-Pin(3+Tab) TO-220 - Rail/Tube (Alt: IPP110N20N3GXKSA1)
    RoHS: Compliant
    Min Qty: 500
    Container: Tube
    Americas - 0
    • 5000:$3.2859
    • 3000:$3.3454
    • 2000:$3.4619
    • 1000:$3.5917
    • 500:$3.7262
    IPP110N20N3GXKSA1
    DISTI # 47W3478
    Infineon Technologies AGMOSFET, N CHANNEL, 200V, 88A, TO220-3,Transistor Polarity:N Channel,Continuous Drain Current Id:88A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.0099ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,MSL:- RoHS Compliant: Yes528
    • 500:$4.0400
    • 250:$4.4300
    • 100:$4.6500
    • 50:$5.0000
    • 25:$5.3500
    • 10:$5.6200
    • 1:$6.2100
    IPP110N20N3 G
    DISTI # 726-IPP110N20N3G
    Infineon Technologies AGMOSFET N-Ch 200V 88A TO220-3 OptiMOS 3
    RoHS: Compliant
    5557
    • 1:$6.1500
    • 10:$5.5600
    • 25:$5.3000
    • 100:$4.6000
    • 250:$4.3900
    • 500:$4.0000
    IPP110N20N3GXKSA1
    DISTI # 726-IPP110N20N3GXKSA
    Infineon Technologies AGMOSFET N-Ch 200V 88A TO220-3 OptiMOS 3
    RoHS: Compliant
    481
    • 1:$6.1500
    • 10:$5.5600
    • 25:$5.3000
    • 100:$4.6000
    • 250:$4.3900
    • 500:$4.0000
    IPP110N20N3GXKSA1
    DISTI # 7528381
    Infineon Technologies AGMOSFET N-CHANNEL 200V 88A OPTIMOS3 TO220, EA280
    • 25:£4.3900
    • 10:£4.7600
    • 1:£5.5700
    IPP110N20N3GXKSA1
    DISTI # 7528381P
    Infineon Technologies AGMOSFET N-CHANNEL 200V 88A OPTIMOS3 TO220, TU286
    • 25:£4.3900
    • 10:£4.7600
    IPP110N20N3GInfineon Technologies AGPOWER FIELD-EFFECT TRANSISTOR, 88A I(D), 200V, 0.011OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB460
    • 220:$8.3520
    • 105:$9.1350
    • 1:$11.7450
    IPP110N20N3GXKSA1
    DISTI # IPP110N20N3GXKSA1
    Infineon Technologies AGTransistor: N-MOSFET,unipolar,200V,88A,300W,PG-TO220-313
    • 50:$4.3200
    • 10:$4.9900
    • 3:$5.6400
    • 1:$6.2700
    IPP110N20N3 G
    DISTI # TMOSP10066
    Infineon Technologies AGMOSFET200V11mOhm88A TO220
    RoHS: Compliant
    Stock DE - 100Stock HK - 0Stock US - 0
    • 50:$4.7700
    • 100:$4.5000
    • 150:$4.2200
    • 200:$3.8100
    • 250:$3.6800
    IPP110N20N3 GInfineon Technologies AGRoHS(ship within 1day)75
    • 1:$7.5100
    • 10:$6.3800
    • 50:$5.6300
    • 100:$5.4100
    • 500:$5.3300
    • 1000:$5.2200
    IPP110N20N3GXKSA1
    DISTI # 2212835
    Infineon Technologies AGMOSFET, N-CH, 200V, 88A, TO220-3813
    • 500:£3.1600
    • 250:£3.4600
    • 100:£3.6400
    • 10:£4.1900
    • 1:£5.3500
    IPP110N20N3GXKSA1
    DISTI # 2212835
    Infineon Technologies AGMOSFET, N-CH, 200V, 88A, TO220-3
    RoHS: Compliant
    806
    • 500:$6.0300
    • 250:$6.6200
    • 100:$6.9300
    • 25:$7.9900
    • 10:$8.3800
    • 1:$9.2700
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    Availability
    Stock:
    Available
    On Order:
    1986
    Enter Quantity:
    Current price of IPP110N20N3 G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $6.15
    $6.15
    10
    $5.56
    $55.60
    25
    $5.30
    $132.50
    100
    $4.60
    $460.00
    250
    $4.39
    $1 097.50
    500
    $4.00
    $2 000.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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