IPA65R280C6XKSA1

Mfr. #:: IPA65R280C6XKSA1
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 700V 13.8A TO220FP-3 CoolMOS C6
Lifecycle:: New from this manufacturer.
Datasheet:: IPA65R280C6XKSA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-220FP-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 650 V

Id - Continuous Drain Current:: 13.8 A

Rds On - Drain-Source Resistance:: 250 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2.5 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 45 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 32 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: CoolMOS

Packaging:: Tube

Height:: 16.15 mm

Length:: 10.65 mm

Series:: CoolMOS C6

Transistor Type:: 1 N-Channel

Width:: 4.85 mm

Brand:: Infineon Technologies

Fall Time:: 12 ns

Product Type:: MOSFET

Rise Time:: 11 ns

Factory Pack Quantity:: 500

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 105 ns

Typical Turn-On Delay Time:: 13 ns

Part # Aliases:: IPA65R280C6XKSA1 SP000720898

Unit Weight:: 0.211644 oz

Tags: IPA65R280C, IPA65R28, IPA65R2, IPA65R, IPA65, IPA6, IPA

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPA65R280C6XKSA1 Ratings and Reviews

А***v

Excellent seller, excellent product.

2019-07-03

M***n

As described

2019-05-23

P***v

Great! Seller recommend!

2019-05-20

IPA65R280C6XKSA1 Description

***ical: Trans MOSFET N-CH 650V 13.8A 3-Pin(3+Tab) TO-220 Full-Pack

***et Europe: Trans MOSFET N-CH 700V 13.8A 3-Pin TO-220FP Tube

***ineon SCT: CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO220-3, RoHS

***ineon: CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

***et Europe: Trans MOSFET N-CH 600V 13.8A 3-Pin(3+Tab) TO-220 Full-Pack

***ark: Mosfet, N-Ch, 600V, 13.8A, To-220Fp-3; Transistor Polarity:n Channel; Continuous Drain Current Id:13.8A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.25Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ineon SCT: CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO220-3, RoHS

***ineon: CoolMOS E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Very high commutation ruggedness; Extremely low losses due to very low Figure of Merit (R DS(ON)*Q g) and E oss); Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

***ure Electronics: Single N-Channel 650 V 310 mOhm 41 nC CoolMOS Power Mosfet - TO-220-3-FP

***ical: Trans MOSFET N-CH 700V 11.4A 3-Pin(3+Tab) TO-220FP Tube

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 8.2pF 50volts C0G +/-0.5pF

***ineon SCT: Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7, PG-TO220-3, RoHS

***nell: MOSFET, N-CH, 650V, 11.4A, TO-220FP-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 11.4A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.28ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4

***ineon: 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility

***ure Electronics: Single N-Channel 600 V 280 mOhm 25.5 nC CoolMOS Power Mosfet - TO-220-3FP

***ical: Trans MOSFET N-CH 600V 13.8A 3-Pin(3+Tab) TO-220FP Tube

***ineon SCT: Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO220-3, RoHS

***nell: MOSFET, N-CH, 600V, 13.8A, TO-220FP-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 13.8A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.252ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs:

***ineon: Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles

***emi: N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 15 A, 260 mΩ, TO-220F

*** Stop Electro: Power Field-Effect Transistor, 15A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***el Electronic: FAIRCHILD SEMICONDUCTOR FCPF260N60E Power MOSFET, N Channel, 15 A, 600 V, 0.22 ohm, 10 V, 2.5 V

***Yang: Trans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-220F - Rail/Tube

***ment14 APAC: MOSFET, N-CH, 600V, 15A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.22ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:36W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220F; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C

***rchild Semiconductor: SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

***icroelectronics: N-channel 650 V, 0.198 Ohm typ., 15 A MDmesh M5 Power MOSFET in TO-220FP package

***ical: Trans MOSFET N-CH 650V 15A 3-Pin(3+Tab) TO-220FP Tube

***enic: 650V 15A 220m´Î@10V7.5A 25W 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS

***ark: MOSFET, N-CH, 650V, 15A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:15A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 15A I(D), 650V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ure Electronics: E Series N Channel 600 V 0.28 O 78 nC Flange Mount Power Mosfet - TO-220FP

***ical: Trans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-220FP

***nell: MOSFET, N-CH, 600V, 15A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.23ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:34W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220FP; No. of Pins:3; MSL:MSL 1 - Unlimited

Market price

Part #	Mfg.	Description	Stock	Price
IPA65R280C6XKSA1 DISTI # IPA65R280C6XKSA1-ND	Infineon Technologies AG	MOSFET N-CH 650V 13.8A TO220 RoHS: Compliant Min Qty: 500 Container: Tube	Temporarily Out of Stock	500:$1.6790
IPA65R280C6 DISTI # 726-IPA65R280C6	Infineon Technologies AG	MOSFET N-Ch 700V 13.8A TO220FP-3 CoolMOS C6 RoHS: Compliant	0	1:$2.5700 10:$2.1900 100:$1.7500 500:$1.5300
IPA65R280C6XKSA1 DISTI # 726-IPA65R280C6XKSA1	Infineon Technologies AG	MOSFET N-Ch 700V 13.8A TO220FP-3 CoolMOS C6 RoHS: Compliant	0

Image	Part #	Description
	Mfr.#: IPA65R280C6 OMO.#: OMO-IPA65R280C6	MOSFET N-Ch 700V 13.8A TO220FP-3 CoolMOS C6
	Mfr.#: IPA65R280E6XKSA1 OMO.#: OMO-IPA65R280E6XKSA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 650V 13.8A TO220
	Mfr.#: IPA65R280C6 TK13A65D OMO.#: OMO-IPA65R280C6-TK13A65D-1190	New and Original
	Mfr.#: IPA65R280C6,65C6280 OMO.#: OMO-IPA65R280C6-65C6280-1190	New and Original
	Mfr.#: IPA65R280C6XKSA1 OMO.#: OMO-IPA65R280C6XKSA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 650V 13.8A TO220
	Mfr.#: IPA65R280E6 TK13A65D OMO.#: OMO-IPA65R280E6-TK13A65D-1190	New and Original
	Mfr.#: IPA65R280E6(65E6280) OMO.#: OMO-IPA65R280E6-65E6280--1190	New and Original
	Mfr.#: IPA65R280E6,65E6280 OMO.#: OMO-IPA65R280E6-65E6280-1190	New and Original
	Mfr.#: IPA65R280E6 OMO.#: OMO-IPA65R280E6-124	Darlington Transistors MOSFET N-Ch 700V 13.8A TO220FP-3 CoolMOS E6
	Mfr.#: IPA65R280C6 OMO.#: OMO-IPA65R280C6-126	IGBT Transistors MOSFET N-Ch 700V 13.8A TO220FP-3 CoolMOS C6