IRF300P226

IRF300P226
Mfr. #:
IRF300P226
Manufacturer:
Infineon Technologies
Description:
MOSFET IFX OPTIMOS
Lifecycle:
New from this manufacturer.
Datasheet:
IRF300P226 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-247AC-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
300 V
Id - Continuous Drain Current:
75 A
Rds On - Drain-Source Resistance:
19 mOhms
Vgs th - Gate-Source Threshold Voltage:
2 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
191 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
313 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
StrongIRFET
Packaging:
Tube
Brand:
Infineon Technologies
Forward Transconductance - Min:
97 S
Fall Time:
32 ns
Product Type:
MOSFET
Rise Time:
44 ns
Factory Pack Quantity:
400
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
79 ns
Typical Turn-On Delay Time:
25 ns
Part # Aliases:
SP001582442
Tags
IRF300, IRF30, IRF3, IRF
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
300V Single N-Channel StrongIRFET™ in a TO-247AC package, TO247-3, RoHS
***ineon
Benefits: Improved Gate, Avalanche and Dynamic dv/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dv/dt and di/dt Capability; Pb-Free ; RoHS Compliant ; Halogen-Free | Target Applications: UPS and Inverter applications; Half-bridge and full-bridge topologies; Resonant mode power supplies; DC/DC and AC/DC converters; OR-ing and redundant power switches; Brushed and BLDC Motor drive applications; Battery powered circuits
***nell
MOSFET, N-CH, 300V, 100A, 556W, TO-247AC; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 300V; On Resistance Rds(on): 0.016ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 556W; Transistor Case Style: TO-247AC; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: StrongIRFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Part # Mfg. Description Stock Price
IRF300P226
DISTI # IRF300P226-ND
Infineon Technologies AGMOSFET IFX OPTIMOS TO247
RoHS: Compliant
Min Qty: 1
Container: Tube
400In Stock
  • 800:$4.9235
  • 400:$5.8531
  • 10:$7.7470
  • 1:$8.6100
IRF300P226
DISTI # 31345226
Infineon Technologies AGIFX OPTIMOS400
  • 1:$8.6100
IRF300P226
DISTI # IRF300P226
Infineon Technologies AGTrans MOSFET N-CH 300V 50A 3-Pin TO-247AC - Rail/Tube (Alt: IRF300P226)
RoHS: Compliant
Min Qty: 400
Container: Tube
Americas - 400
  • 400:$4.4900
  • 800:$4.2900
  • 1600:$4.0900
  • 2400:$3.9900
  • 4000:$3.8900
IRF300P226
DISTI # 726-IRF300P226
Infineon Technologies AGMOSFET IFX OPTIMOS
RoHS: Compliant
0
  • 1:$7.4500
  • 10:$6.7300
  • 25:$6.4200
  • 100:$5.5800
  • 250:$5.3300
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Mfr.#: 1HP04CH-TL-W

OMO.#: OMO-1HP04CH-TL-W-ON-SEMICONDUCTOR

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Mfr.#: D25XB60-7000

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Availability
Stock:
121
On Order:
2104
Enter Quantity:
Current price of IRF300P226 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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