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T1G4020036-FL

T1G4020036-FL
Mfr. #:
T1G4020036-FL
Manufacturer:
Qorvo
Description:
RF JFET Transistors DC-3.5GHz GaN 2X 120W 36Volt
Lifecycle:
New from this manufacturer.
Datasheet:
T1G4020036-FL Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
T1G4020036-FL more Information
Product Attribute
Attribute Value
Manufacturer:
Cree, Inc.
Product Category:
RF JFET Transistors
RoHS:
N
Transistor Type:
HEMT
Technology:
GaN
Gain:
12 dB
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
120 V
Vgs - Gate-Source Breakdown Voltage:
- 10 V, 2 V
Id - Continuous Drain Current:
12 A
Output Power:
85 W
Maximum Drain Gate Voltage:
28 V
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Mounting Style:
Screw Mount
Package / Case:
CG2H30070F
Packaging:
Bulk
Configuration:
Single
Operating Frequency:
0.5 GHz to 3 GHz
Brand:
Wolfspeed / Cree
Product Type:
RF JFET Transistors
Factory Pack Quantity:
1
Subcategory:
Transistors
Vgs th - Gate-Source Threshold Voltage:
- 2.8 V
Tags
T1G402, T1G4, T1G
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***hardson RFPD
RF POWER TRANSISTOR GAN
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Part # Mfg. Description Stock Price
T1G4020036-FL
DISTI # 20395646		TriQuint SemiconductorRF POWER TRANSISTOR GAN8
  • 1:$623.1000
T1G4020036-FL
DISTI # 772-T1G4020036-FL		QorvoRF JFET Transistors DC-3.5GHz GaN 2X 120W 36Volt
RoHS: Compliant		25
  • 1:$656.0000
T1G4020036-FL-EVB
DISTI # 772-T1G4020036FLEVB		QorvoRF Development Tools
RoHS: Compliant		0
  • 1:$875.0000
1110866
DISTI # T1G4020036-FL		QorvoRF POWER TRANSISTOR
RoHS: Compliant		8
  • 1:$355.6900
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Availability
Stock:
Available
On Order:
3000
Enter Quantity:
Current price of T1G4020036-FL is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$656.00
$656.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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