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IRG4IBC20UDPBF

IRG4IBC20UDPBF
Mfr. #:
IRG4IBC20UDPBF
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors 600V UltraFast 8-60kHz
Lifecycle:
New from this manufacturer.
Datasheet:
IRG4IBC20UDPBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRG4IBC20UDPBF DatasheetIRG4IBC20UDPBF Datasheet (P4-P6)IRG4IBC20UDPBF Datasheet (P7-P9)IRG4IBC20UDPBF Datasheet (P10)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer
Infineon Technologies
Product Category
IGBTs - Single
Series
-
Packaging
Tube
Unit-Weight
0.081130 oz
Mounting-Style
Through Hole
Package-Case
TO-220-3 Full Pack
Input-Type
Standard
Mounting-Type
Through Hole
Supplier-Device-Package
TO-220AB Full-Pak
Configuration
Single
Power-Max
34W
Reverse-Recovery-Time-trr
37ns
Current-Collector-Ic-Max
11.4A
Voltage-Collector-Emitter-Breakdown-Max
600V
IGBT-Type
-
Current-Collector-Pulsed-Icm
52A
Vce-on-Max-Vge-Ic
2.1V @ 15V, 6.5A
Switching-Energy
160μJ (on), 130μJ (off)
Gate-Charge
27nC
Td-on-off-25°C
39ns/93ns
Test-Condition
480V, 6.5A, 50 Ohm, 15V
Pd-Power-Dissipation
34 W
Minimum-Operating-Temperature
- 55 C
Collector-Emitter-Voltage-VCEO-Max
600 V
Collector-Emitter-Saturation-Voltage
2.1 V
Continuous-Collector-Current-at-25-C
11.4 A
Maximum-Gate-Emitter-Voltage
+/- 20 V
Tags
IRG4IBC20U, IRG4IBC2, IRG4IBC, IRG4IB, IRG4I, IRG4, IRG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 11.4A 34000mW 3-Pin(3+Tab) TO-220AB Full-Pak Tube
***ernational Rectifier
600V UltraFast 8-60 kHz Copack IGBT in a TO-220 FullPak package
***ure Electronics
N Channel 600 V 34 W 27 nC Flange Mount UltraFast CoPack IGBT - TO-220FP
***nell
IGBT, TO-220 FULLPAK; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:11.4A; Voltage, Vce Sat Max:1.85V; Power Dissipation:34W; Case Style:TO-220FP; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:52A; No. of Pins:3; Power, Pd:34W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall Max:220ns; Time, Rise:17ns; Transistors, No. of:1
***ical
Trans IGBT Chip N-CH 600V 10A 25000mW 3-Pin(3+Tab) TO-220FP Tube
***ure Electronics
STGF7NC60HD Series 600 V 10 A N-Channel Very Fast PowerMESH IGBT - TO-220FP
***icroelectronics
N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, 600V, 7A, TO-220FP; DC Collector Current: 10A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 80W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pins: 3Pins;
***ark
N CH IGBT, PowerMESH, 600V, 10A, TO-220FP; Continuous Collector Current:10A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:25W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:150°C RoHS Compliant: Yes
***et
Trans IGBT Chip N-CH 600V 13A 3-Pin(3+Tab) TO-220 Rail
***r Electronics
Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***rchild Semiconductor
Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UD series si designed for applications such as motor control and general inverters where high speed switching is a required feature.
***et
IGBT 600V 8A 35W TO220F
***i-Key
IGBT SHORT CIRC 600V 5A TO-220F
***i-Key Marketplace
IGBT, 8A, 600V, N-CHANNEL
***el Electronic
RES 4.7K OHM 1% 1/16W 0402
***ser
IGBTs 600V/5A/w/FRD
***et
Motor / Motion / Ignition Controllers & Drivers 600V/6.5A/w/FRD
***i-Key
IGBT 600V 13A 45W TO220F
***i-Key Marketplace
IGBT, 13A, 600V, N-CHANNEL
***ser
IGBTs 600V/6.5A/w/FRD
***p One Stop Global
Trans IGBT Chip N-CH 600V 10A 3-Pin(3+Tab) TO-220FP Tube
***r Electronics
Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***icroelectronics
10 A, 600 V, fast IGBT with Ultrafast diode
***ical
Trans IGBT Chip N-CH 650V 14A 33300mW 3-Pin(3+Tab) TO-220FP Tube
***ineon SCT
650 V, 15 A IGBT with anti-parallel diode in TO-247 package, PG-TO220-3, RoHS
*** Stop Electro
Insulated Gate Bipolar Transistor, 14A I(C), 650V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, 650V, 15A, TO220-3; DC Collector Current: 15A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 33.3W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-220; No. of Pins: 3Pins;
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
Part # Mfg. Description Stock Price
IRG4IBC20UDPBF
DISTI # IRG4IBC20UDPBF-ND		Infineon Technologies AGIGBT 600V 11.4A 34W TO220FP
RoHS: Compliant
Min Qty: 2000
Container: Tube		Limited Supply - Call
    IRG4IBC20UDPBF
    DISTI # 63J7500    		Infineon Technologies AGSINGLE IGBT, 600V, 11.4A,DC Collector Current:11.4A,Collector Emitter Saturation Voltage Vce(on):2.27V,Power Dissipation Pd:34W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes89
    • 1:$1.2000
    • 10:$1.2000
    • 25:$1.2000
    • 50:$1.2000
    • 100:$1.2000
    • 250:$1.2000
    • 500:$1.2000
    IRG4IBC20UDPBF
    DISTI # 70018443    		Infineon Technologies AG600V ULTRAFAST 8-60 KHZ COPACK IGBT IN A TO-220 FULLPAK PACKAGE
    RoHS: Compliant    		0
    • 700:$3.2100
    • 1400:$3.1460
    • 3500:$3.0500
    • 7000:$2.9210
    • 17500:$2.7290
    IRG4IBC20UDPBF
    DISTI # 942-IRG4IBC20UDPBF    		Infineon Technologies AGIGBT Transistors 600V UltraFast 8-60kHz
    RoHS: Compliant    		560
    • 1:$2.8100
    • 10:$2.3900
    • 100:$1.9100
    • 500:$1.6700
    • 1000:$1.3900
    IRG4IBC20UDPBFInfineon Technologies AGInsulated Gate Bipolar Transistor, 11.4A I(C), 600V V(BR)CES, N-Channel, TO-220AB
    RoHS: Compliant    		1862
    • 1000:$1.2500
    • 500:$1.3200
    • 100:$1.3700
    • 25:$1.4300
    • 1:$1.5400
    IRG4IBC20UDPBFInternational RectifierInsulated Gate Bipolar Transistor, 11.4A I(C), 600V V(BR)CES, N-Channel, TO-220AB
    RoHS: Compliant    		273400
    • 1000:$1.2500
    • 500:$1.3200
    • 100:$1.3700
    • 25:$1.4300
    • 1:$1.5400
    IRG4IBC20UDPBF
    DISTI # IRG4IBC20UDPBF    		Infineon Technologies AGTransistor: IGBT,600V,11.4A,34W,TO220AB203
    • 1:$1.7400
    • 3:$1.5600
    • 10:$1.2300
    • 50:$1.1000
    Image Part # Description
    IRG4IBC30WPBF

    Mfr.#: IRG4IBC30WPBF

    OMO.#: OMO-IRG4IBC30WPBF

    		 IGBT Transistors 600V Warp 60-150kHz
    IRG4IBC10UDPBF

    Mfr.#: IRG4IBC10UDPBF

    OMO.#: OMO-IRG4IBC10UDPBF

    		 IGBT Transistors 600V UltraFast 8-60kHz
    IRG4IBC20KD

    Mfr.#: IRG4IBC20KD

    OMO.#: OMO-IRG4IBC20KD-INFINEON-TECHNOLOGIES

    		 IGBT 600V 11.5A 34W TO220FP
    IRG4IBC20KDPBF.

    Mfr.#: IRG4IBC20KDPBF.

    OMO.#: OMO-IRG4IBC20KDPBF--1190

    		 New and Original
    IRG4IBC20UDPBF.

    Mfr.#: IRG4IBC20UDPBF.

    OMO.#: OMO-IRG4IBC20UDPBF--1190

    		 New and Original
    IRG4IBC30FD

    Mfr.#: IRG4IBC30FD

    OMO.#: OMO-IRG4IBC30FD-INFINEON-TECHNOLOGIES

    		 IGBT 600V 20.3A 45W TO220FP
    IRG4IBC30KD

    Mfr.#: IRG4IBC30KD

    OMO.#: OMO-IRG4IBC30KD-INFINEON-TECHNOLOGIES

    		 IGBT 600V 17A 45W TO220FP
    IRG4IBC30S,IRG4IBC30SPBF

    Mfr.#: IRG4IBC30S,IRG4IBC30SPBF

    OMO.#: OMO-IRG4IBC30S-IRG4IBC30SPBF-1190

    		 New and Original
    IRG4IBC30W

    Mfr.#: IRG4IBC30W

    OMO.#: OMO-IRG4IBC30W-INFINEON-TECHNOLOGIES

    		 IGBT 600V 17A 45W TO220FP
    IRG4IBC40UD

    Mfr.#: IRG4IBC40UD

    OMO.#: OMO-IRG4IBC40UD-1190

    		 New and Original
    Availability
    Stock:
    Available
    On Order:
    5000
    Enter Quantity:
    Current price of IRG4IBC20UDPBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $1.66
    $1.66
    10
    $1.58
    $15.82
    100
    $1.50
    $149.85
    500
    $1.42
    $707.65
    1000
    $1.33
    $1 332.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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