NGTB75N65FL2WG

Mfr. #:: NGTB75N65FL2WG
Manufacturer:: ON Semiconductor
Description:: IGBT Transistors 650V/75A FAST FSII TO-247
Lifecycle:: New from this manufacturer.
Datasheet:: NGTB75N65FL2WG Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: NGTB75N65FL2WG Datasheet NGTB75N65FL2WG Datasheet (P4-P6)NGTB75N65FL2WG Datasheet (P7-P9)NGTB75N65FL2WG Datasheet (P10-P11)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Series:: NGTB75N65FL2

Packaging:: Tube

Brand:: ON Semiconductor

Product Type:: IGBT Transistors

Factory Pack Quantity:: 30

Subcategory:: IGBTs

Unit Weight:: 0.000071 oz

Tags: NGTB75N65FL2W, NGTB75N65, NGTB7, NGTB, NGT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NGTB75N65FL2WG Description

***ical: Trans IGBT Chip N-CH 650V 100A 595000mW 3-Pin(3+Tab) TO-247 Tube

***ment14 APAC: TRANSISTOR, IGBT, 1.75KV, 100A, TO-247

***i-Key: IGBT TRENCH/FS 650V 100A TO247

***r Electronics: Insulated Gate Bipolar Transistor

***nell: TRANSISTOR, IGBT, 1.75KV, 100A, TO-247; DC Collector Current: 100A; Collector Emitter Saturation Voltage Vce(on): 1.75V; Power Dissipation Pd: 595W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No.

***ical: Trans IGBT Chip N-CH 650V 100A 417000mW 3-Pin(3+Tab) TO-247 Tube

***ure Electronics: 650 V 100 A Through Hole Insulated Gate Bipolar Transistor (IGBT) - TO-247-3

***r Electronics: Insulated Gate Bipolar Transistor, 100A I(C), 650V V(BR)CES, N-Channel

***i-Key: IGBT TRENCH/FS 650V 100A TO247-3

***DA Technology Co., Ltd.: Product Description Demo for Development.

***et: Trans IGBT Chip N-CH 600V 100A 3-Pin(3+Tab) TO-247AC Tube

***SIT Distribution GmbH: Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel

*** Electronic Components: IGBT Transistors IR IGBT 600V 600V 48A COPAK-247AC

***(Formerly Allied Electronics): Transistor IGBT N-ch 600V 60A TO-247AC

***ineon: Target Applications: Pump; Solar; UPS; Welding

***or: IGBT W/ULTRAFAST SOFT RECOVERY D

***ical: Trans IGBT Chip N-CH 650V 80A 283000mW 3-Pin(3+Tab) TO-247 Tube

***icroelectronics: Trench gate field-stop IGBT, HB series 650 V, 40 A high speed

***nell: IGBT, SINGLE, 650V, 80A, TO-247; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 283W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins:

***ical: Trans IGBT Chip N-CH 650V 80A 290000mW Automotive 3-Pin(3+Tab) TO-247 Tube

***r Electronics: Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247AB

*** Electronic Components: IGBT Transistors N-ch / 40A 650V IGBT

***nell: IGBT, 650V, 40A, 1.8V, TO-247 FIELD STOP;

***i-Key: IGBT FIELD STOP 650V 80A TO247-3

***rchild Semiconductor: Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential

***ical: Trans IGBT Chip N=-CH 650V 80A 305000mW 3-Pin(3+Tab) TO-247 Tube

*** Source Electronics: 650V DuoPack IGBT and Diode High speed switching series fifth generation

***ineon SCT: 650 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS

***nell: IGBT, 650V, 50A, TO247-3; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 305W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins: 3Pins;

***ineon: Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding

***icroelectronics: Trench gate field-stop IGBT, HB series 650 V, 60 A high speed

*** Source Electronics: Trans IGBT Chip N-CH 650V 80A 375000mW 3-Pin(3+Tab) TO-247 Tube / IGBT BIPO 650V 60A TO247-3

***ark: Transistor, Igbt, 650V, 80A, To-247Ll Rohs Compliant: Yes

***icroelectronics SCT: Short-circuit rugged IGBT, TO-247 long leads, Tube

***el Electronic: DAC 4-CH R-2R 8-bit 20-Pin PDIP Tube

***r Electronics: Insulated Gate Bipolar Transistor

Market price

Part #	Mfg.	Description	Stock	Price
NGTB75N65FL2WG DISTI # V99:2348_07283923	ON Semiconductor	Trans IGBT Chip N-CH 650V 100A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	90	2500:$4.3960 1000:$4.4589 500:$4.9260 250:$5.3280 100:$5.7140 25:$6.6130 10:$6.8780 1:$7.5470
NGTB75N65FL2WG DISTI # NGTB75N65FL2WGOS-ND	ON Semiconductor	IGBT 600V 75A TO247 RoHS: Compliant Min Qty: 1 Container: Tube	210In Stock	510:$5.8590 120:$6.7284 30:$7.7490 1:$9.0000
NGTB75N65FL2WG DISTI # 30652377	ON Semiconductor	Trans IGBT Chip N-CH 650V 100A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	90	25:$6.6130 10:$6.8780 2:$7.5470
NGTB75N65FL2WG DISTI # NGTB75N65FL2WG	ON Semiconductor	Trans IGBT Chip N-CH 650V 100A 3-Pin TO-247 Tube (Alt: NGTB75N65FL2WG) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 90	1:€5.7900 10:€5.2900 25:€5.0900 50:€4.8900 100:€4.6900 500:€4.4900 1000:€4.1900
NGTB75N65FL2WG DISTI # NGTB75N65FL2WG	ON Semiconductor	Trans IGBT Chip N-CH 650V 100A 3-Pin TO-247 Tube - Rail/Tube (Alt: NGTB75N65FL2WG) RoHS: Compliant Min Qty: 90 Container: Tube	Americas - 0	90:$4.6900 150:$4.5900 240:$4.5900 450:$4.4900 900:$4.3900
NGTB75N65FL2WG DISTI # 13AC3828	ON Semiconductor	TRANSISTOR, IGBT, 1.75KV, 100A, TO-247,DC Collector Current:100A,Collector Emitter Saturation Voltage Vce(on):1.75V,Power Dissipation Pd:595W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-247,No. of , RoHS Compliant: Yes	56	1:$8.1000 10:$7.2800 25:$6.6300 50:$6.2000 100:$5.7600 250:$4.8300 500:$4.6800
NGTB75N65FL2WG. DISTI # 15AC3816	ON Semiconductor	DC Collector Current:100A,Collector Emitter Saturation Voltage Vce(on):1.7V,Power Dissipation Pd:595W,Collector Emitter Voltage V(br)ceo:650V,No. of Pins:3Pins,Operating Temperature Max:175°C,Product Range:-,MSL:- , RoHS Compliant: Yes	0	1:$4.6900 150:$4.5900 450:$4.4900 900:$4.3900
NGTB75N65FL2WG DISTI # 863-NGTB75N65FL2WG	ON Semiconductor	IGBT Transistors 650V/75A FAST FSII TO-247 RoHS: Compliant	60	1:$8.5700 10:$7.7500 25:$7.3900 100:$6.4100 250:$6.1300 500:$5.5800 1000:$4.8700
NGTB75N65FL2WG	ON Semiconductor	RoHS: Not Compliant	30	1000:$5.8800 500:$6.1900 100:$6.4500 25:$6.7200 1:$7.2400
NGTB75N65FL2WG	ON Semiconductor	INSTOCK	5274
NGTB75N65FL2WG DISTI # 2724386	ON Semiconductor	TRANSISTOR, IGBT, 1.75KV, 100A, TO-247 RoHS: Compliant	56	1:£7.0300 5:£6.4800 10:£5.5900 50:£5.4500 100:£4.8500
NGTB75N65FL2WG	ON Semiconductor		4850	1:$8.6000 100:$6.4500 500:$5.5300 1000:$5.1600
NGTB75N65FL2WG DISTI # 2724386	ON Semiconductor	TRANSISTOR, IGBT, 1.75KV, 100A, TO-247 RoHS: Compliant	56	1:$14.8900 30:$12.9800 120:$11.2500 510:$10.1200
NGTB75N65FL2WG DISTI # C1S541901267591	ON Semiconductor	Trans IGBT Chip N-CH 650V 100A 595000mW 3-Pin(3+Tab) TO-247 Tube	90	25:$6.6130 10:$6.8780 1:$7.5470

Image	Part #	Description
	Mfr.#: STTH6006W OMO.#: OMO-STTH6006W	Rectifiers Turbo 2 RECTIFIER Ultrafast Hi Vltg
	Mfr.#: TLP350H(F) OMO.#: OMO-TLP350H-F-	Logic Output Optocouplers Photo-IC 35V VCC 3750 Vrms 5mA 30V
	Mfr.#: STW9NK95Z OMO.#: OMO-STW9NK95Z	MOSFET N-channel 950 V, 1.15 Ohm typ., 7 A Zener-protected SuperMESH(TM) Power MOSFET in a TO-247 package
	Mfr.#: PIC18F4550-I/P OMO.#: OMO-PIC18F4550-I-P	8-bit Microcontrollers - MCU 32kBF 2048RM FSUSB2
	Mfr.#: PIC18F452-I/P OMO.#: OMO-PIC18F452-I-P	8-bit Microcontrollers - MCU 32KB 1536 RAM 34I/O
	Mfr.#: AP1501-12K5G-13 OMO.#: OMO-AP1501-12K5G-13	Switching Voltage Regulators BUCK CONV PWM 150KHz 3A 4.5-40V 1.23V
	Mfr.#: RT114012 OMO.#: OMO-RT114012	General Purpose Relays SPDT 12VDC 360Ohm 12A GEN PURPOSE RLY
	Mfr.#: IRM-20-12 OMO.#: OMO-IRM-20-12-MEAN-WELL	Switching Power Supplies 12V 1.8A 21.6W 85-264Vin Encap PS
	Mfr.#: IRM-10-5 OMO.#: OMO-IRM-10-5-MEAN-WELL	Switching Power Supplies 5V 2A 10W 85-264Vin Encap PS
	Mfr.#: TLP350H(F) OMO.#: OMO-TLP350H-F--TOSHIBA-SEMICONDUCTOR-AND-STOR	Logic Output Optocouplers Photo-IC 35V VCC 3750 Vrms 5mA 30V

NGTB75N65FL2WG

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes