IXFH18N90P

IXFH18N90P
Mfr. #:
IXFH18N90P
Manufacturer:
Littelfuse
Description:
IGBT Transistors MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
Lifecycle:
New from this manufacturer.
Datasheet:
IXFH18N90P Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IXFH18N90P more Information
Product Attribute
Attribute Value
Manufacturer
IXYS
Product Category
FETs - Single
Series
IXFH18N90
Packaging
Tube
Unit-Weight
0.229281 oz
Mounting-Style
Through Hole
Tradename
HyperFET
Package-Case
TO-247-3
Technology
Si
Number-of-Channels
1 Channel
Configuration
Single
Transistor-Type
1 N-Channel
Pd-Power-Dissipation
540 W
Maximum-Operating-Temperature
+ 150 C
Minimum-Operating-Temperature
- 55 C
Fall-Time
44 ns
Rise-Time
33 ns
Vgs-Gate-Source-Voltage
30 V
Id-Continuous-Drain-Current
18 A
Vds-Drain-Source-Breakdown-Voltage
900 V
Vgs-th-Gate-Source-Threshold-Voltage
3 V to 6 V
Rds-On-Drain-Source-Resistance
600 mOhms
Transistor-Polarity
N-Channel
Typical-Turn-Off-Delay-Time
60 ns
Typical-Turn-On-Delay-Time
40 ns
Qg-Gate-Charge
97 nC
Forward-Transconductance-Min
10 S
Channel-Mode
Enhancement
Tags
IXFH18N, IXFH18, IXFH1, IXFH, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 900V 18A 3-Pin(3+Tab) TO-247
***pNet
N CH POLAR PMOS HiPerFET, 900V, 18A, TO-247
***ment14 APAC
MOSFET,N CH,900V,18A,TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:900V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:540W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; Current Id Max:18A; Power Dissipation Pd:540W; Voltage Vgs Max:30V
900V Polar HiPerFET Power MOSFETs
IXYS 900V Polar HiPerFET™ Power MOSFETs are available with drain current ratings from 10.5A to 56A and combine the advantages derived from the IXYS Polar Technology platform and HiPerFET process to provide improved power efficiency and reliability in demanding high-voltage conversion systems that require bus voltage operation of up to 700V. IXYS 900V Polar HiPerFET Power MOSFETs are tailored to minimize on-state resistance while maintaining low gate charge, resulting in a substantial reduction in conduction and switching losses. These IXYS devices feature a fast intrinsic diode for low reverse recovery charge and improved turn-off dV/dt immunity. These high reliability Polar HiPerFET Power MOSFETs are ideal for use in a variety of applications, including switch-mode / resonant-mode power supplies, DC/DC converters, laser drivers, and more.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Part # Mfg. Description Stock Price
IXFH18N90P
DISTI # V99:2348_15877383
IXYS CorporationTrans MOSFET N-CH 900V 18A 3-Pin(3+Tab) TO-24730
  • 1000:$5.2550
  • 500:$5.5250
  • 250:$6.0450
  • 100:$6.5820
  • 50:$6.7690
  • 25:$7.2560
  • 10:$8.4930
  • 1:$10.2311
IXFH18N90P
DISTI # IXFH18N90P-ND
IXYS CorporationMOSFET N-CH TO-247
RoHS: Compliant
Min Qty: 30
Container: Tube
Temporarily Out of Stock
  • 30:$7.6877
IXFH18N90P
DISTI # 25894581
IXYS CorporationTrans MOSFET N-CH 900V 18A 3-Pin(3+Tab) TO-24730
  • 1000:$5.6491
  • 500:$5.9394
  • 250:$6.4984
  • 100:$7.0757
  • 50:$7.2767
  • 25:$7.8002
  • 10:$9.1300
  • 2:$9.9986
IXFH18N90P
DISTI # 747-IXFH18N90P
IXYS CorporationMOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
RoHS: Compliant
440
  • 1:$10.7800
  • 10:$9.7000
  • 25:$8.0700
  • 50:$7.5000
  • 100:$7.3300
  • 250:$6.7000
  • 500:$6.1000
  • 1000:$5.8200
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Availability
Stock:
Available
On Order:
5500
Enter Quantity:
Current price of IXFH18N90P is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$7.88
$7.88
10
$7.49
$74.88
100
$7.09
$709.43
500
$6.70
$3 350.05
1000
$6.31
$6 306.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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