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TGF2979-SM

TGF2979-SM
Mfr. #:
TGF2979-SM
Manufacturer:
Qorvo
Description:
RF JFET Transistors 8-12GHz 25W GaN PAE 50% Gain 11dB
Lifecycle:
New from this manufacturer.
Datasheet:
TGF2979-SM Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
TGF2979-SM more Information
Product Attribute
Attribute Value
Manufacturer:
Qorvo
Product Category:
RF JFET Transistors
RoHS:
Y
Transistor Type:
HEMT
Technology:
GaN SiC
Gain:
13 dB
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
32 V
Vgs - Gate-Source Breakdown Voltage:
- 2.7 V
Id - Continuous Drain Current:
326 mA
Output Power:
6 W
Maximum Operating Temperature:
+ 225 C
Pd - Power Dissipation:
8.4 W
Mounting Style:
SMD/SMT
Package / Case:
QFN-16
Packaging:
Tray
Configuration:
Single
Height:
0.203 mm
Length:
3 mm
Operating Frequency:
DC to 12 GHz
Type:
GaN SiC HEMT
Width:
3 mm
Brand:
Qorvo
Number of Channels:
1 Channel
Development Kit:
TGF2977-SMEVB1
Moisture Sensitive:
Yes
Product Type:
RF JFET Transistors
Factory Pack Quantity:
50
Subcategory:
Transistors
Part # Aliases:
1127257
Unit Weight:
0.002014 oz
Tags
TGF297, TGF29, TGF2, TGF
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC- 12 GHz, 25 W, 11 dB, 32 V, GaN, Plastic , QFN
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
TGF297x GaN RF Transistor
Qorvo TGF297x GaN RF Transistors have a frequency range of DC to 12GHz. The TGF2970 transistors offer output power from 6W up to 22W. The TGF2970 transistors are constructed using a TQGaN25 process, which features field plate techniques to optimize power and efficiency at high drain bias operation. Learn More
Part # Mfg. Description Stock Price
TGF2979-SM
DISTI # 772-TGF2979-SM		QorvoRF JFET Transistors 8-12GHz 25W GaN PAE 50% Gain 11dB
RoHS: Compliant		95
  • 1:$62.0000
  • 25:$53.6200
  • 100:$46.3800
TGF2979-SM-EVB
DISTI # 772-TGF2979-SM-EVB		QorvoRF Development Tools
RoHS: Compliant		0
  • 1:$875.0000
1127378
DISTI # TGF2979-SM		QorvoRF POWER TRANSISTOR
RoHS: Compliant		30
  • 1:$38.2200
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Availability
Stock:
90
On Order:
2073
Enter Quantity:
Current price of TGF2979-SM is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$62.00
$62.00
25
$53.62
$1 340.50
100
$46.38
$4 638.00
250
$43.13
$10 782.50
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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