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IPB80N04S2-H4

Mfr. #:: IPB80N04S2-H4
Manufacturer:: Rochester Electronics, LLC
Description:: Trans MOSFET N-CH 40V 80A 3-Pin TO-263 T/R (Alt: IPB80N04S2-H4)
Lifecycle:: New from this manufacturer.
Datasheet:: IPB80N04S2-H4 Datasheet
ECAD Model:

Availability

Stock:: Available
On Order:: 2500
Enter Quantity:

Current price of IPB80N04S2-H4 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$1.47~~; ~~$1.47~~

10: ~~$1.39~~; ~~$13.93~~

100: ~~$1.32~~; ~~$132.02~~

500: ~~$1.25~~; ~~$623.40~~

1000: ~~$1.17~~; ~~$1 173.50~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

Product Attribute
Attribute Value

Manufacturer: INFINEON

Product Category: FETs - Single

Series: OptiMOS

Packaging: Reel

Part-Aliases: IPB80N04S2H4ATMA1 IPB80N04S2H4XT SP000218165

Unit-Weight: 0.139332 oz

Mounting-Style: SMD/SMT

Tradename: OptiMOS

Package-Case: TO-252-3

Technology: Si

Number-of-Channels: 1 Channel

Configuration: Single

Transistor-Type: 1 N-Channel

Pd-Power-Dissipation: 300 W

Maximum-Operating-Temperature: + 175 C

Minimum-Operating-Temperature: - 55 C

Fall-Time: 22 ns

Rise-Time: 63 ns

Vgs-Gate-Source-Voltage: 20 V

Id-Continuous-Drain-Current: 80 A

Vds-Drain-Source-Breakdown-Voltage: 40 V

Rds-On-Drain-Source-Resistance: 3.7 mOhms

Transistor-Polarity: N-Channel

Typical-Turn-Off-Delay-Time: 46 ns

Typical-Turn-On-Delay-Time: 23 ns

Channel-Mode: Enhancement

Tags: IPB80N04S2, IPB80N04, IPB80N0, IPB80N, IPB8, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

Part #	Mfg.	Description	Stock	Price
IPB80N04S2H4ATMA2 DISTI # 27074094	Infineon Technologies AG	Trans MOSFET N-CH 40V 80A Automotive 3-Pin(2+Tab) D2PAK T/R	2000	5000:$1.3056 2000:$1.3632 1000:$1.4304
IPB80N04S2H4ATMA1 DISTI # IPB80N04S2H4ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 40V 80A TO263-3 RoHS: Compliant Container: Tape & Reel (TR)	Limited Supply - Call
IPB80N04S2H4ATMA2 DISTI # IPB80N04S2H4ATMA2-ND	Infineon Technologies AG	MOSFET N-CHANNEL_30/40V RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Temporarily Out of Stock	1000:$1.6359
IPB80N04S2H4ATMA2 DISTI # C1S322000461723	Infineon Technologies AG	Trans MOSFET N-CH 40V 80A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	2000	1000:$1.6400
IPB80N04S2-H4 DISTI # IPB80N04S2-H4	Infineon Technologies AG	Trans MOSFET N-CH 40V 80A 3-Pin TO-263 T/R (Alt: IPB80N04S2-H4) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Asia - 3000
IPB80N04S2H4ATMA2 DISTI # IPB80N04S2H4ATMA2	Infineon Technologies AG	Trans MOSFET N-CH 40V 80A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB80N04S2H4ATMA2) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$1.4900 2000:$1.3900 4000:$1.3900 6000:$1.2900 10000:$1.2900
IPB80N04S2H4ATMA2 DISTI # SP001058130	Infineon Technologies AG	Trans MOSFET N-CH 40V 80A 3-Pin TO-263 T/R (Alt: SP001058130) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	1000:€2.2900 2000:€1.7900 4000:€1.4900 6000:€1.3900 10000:€1.2900
IPB80N04S2H4ATMA2 DISTI # 726-IPB80N04S2H4ATM2	Infineon Technologies AG	MOSFET N-CHANNEL_30/40V RoHS: Compliant	1000	1:$2.8200 10:$2.3900 100:$2.0800 250:$1.9700 500:$1.7700 1000:$1.4900 2000:$1.4200 5000:$1.3600
IPB80N04S2-H4 DISTI # 726-IPB80N04S2H4	Infineon Technologies AG	MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS RoHS: Compliant	0
IPB80N04S2-H4	Infineon Technologies AG	Power Field-Effect Transistor, 80A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	386	1000:$1.3300 500:$1.4000 100:$1.4600 25:$1.5200 1:$1.6400
IPB80N04S2H4ATMA2	Infineon Technologies AG	Power Field-Effect Transistor, 80A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	624	1000:$0.9500 500:$1.0000 100:$1.0400 25:$1.0800 1:$1.1700

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	Mfr.#: IPB80N04S2-H4 INFINEON Y OMO.#: OMO-IPB80N04S2-H4-INFINEON-Y-1190	New and Original
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