TN0110N3-G-P002

TN0110N3-G-P002
Mfr. #:
TN0110N3-G-P002
Manufacturer:
Microchip Technology
Description:
MOSFET N-CH Enhancmnt Mode MOSFET
Lifecycle:
New from this manufacturer.
Datasheet:
TN0110N3-G-P002 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
TN0110N3-G-P002 more Information TN0110N3-G-P002 Product Details
Product Attribute
Attribute Value
Manufacturer:
Microchip
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-92-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
350 mA
Rds On - Drain-Source Resistance:
4.5 Ohms
Vgs - Gate-Source Voltage:
20 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
1 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Height:
5.33 mm
Length:
5.21 mm
Product:
MOSFET Small Signal
Transistor Type:
1 N-Channel
Width:
4.19 mm
Brand:
Microchip Technology
Fall Time:
3 ns
Product Type:
MOSFET
Rise Time:
3 ns
Factory Pack Quantity:
2000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
6 ns
Typical Turn-On Delay Time:
2 ns
Unit Weight:
0.016000 oz
Tags
TN0110N3-G, TN0110N3, TN0110N, TN011, TN01, TN0
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH Si 100V 0.35A 3-Pin TO-92 T/R
***rochip
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 100V, 3.0 Ohm
***ark
Mosfet, N-Channel Enhancement-Mode, 100V, 3.0 Ohm 3 To-92 Rvt/R Rohs Compliant: Yes |Microchip TN0110N3-G-P002
***rochip SCT
Enhancement-Mode N-Channel, 3Ω, 2V, TO-92-3, RoHS
*** Electronic Components
MOSFET N-CH Enhancmnt Mode MOSFET
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N-Channel 100 V 4.5 Ohm 700 mW Enhancement Mode Vertical DMOS FET - TO-92
***ical
Trans MOSFET N-CH 100V 0.32A Automotive 3-Pin E-Line
***(Formerly Allied Electronics)
MOSFET N-Channel 100V 0.32A E-Line | Diodes Inc ZVNL110A
***nsix Microsemi
Small Signal Field-Effect Transistor, 0.32A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ronik
N-CH-FET 0,32A 100V TO92E-LINE
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:320Ma; On Resistance Rds(On):3Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Product Range:- Rohs Compliant: No
***ark
Mosfet, N-Ch, 100V, 0.32A, To-92 Rohs Compliant: Yes |Diodes Inc. ZVNL110ASTZ
***ure Electronics
N-Channel 100 V 3 Ohm Enhancement Mode Vertical DMOS FET - TO-92
***ical
Trans MOSFET N-CH 100V 0.32A Automotive 3-Pin E-Line T/R
***ure Electronics
N-Channel 100 V 4 Ohm Enhancement Mode Vertical DMOS FET- TO-92
***ical
Flamar Control Cable WSOR Jacket Unshielded 3 Circuits 21 AWG with Green/Yellow Ground 5.60mm Diameter 300.0m Length Gray
***ark
N CH DMOS FET, 100V, 320mA, TO-92; Transistor Polarity:N Channel; Continuous Drain Current, Id:320mA; Drain Source Voltage, Vds:100V; On Resistance, Rds(on):4ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.4V ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, E-LINE; Transistor Polarity:N Channel; Continuous Drain Current Id:320mA; Drain Source Voltage Vds:100V; On Resistance Rds(on):4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.4V; Power Dissipation Pd:700mW; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:320mA; Current Temperature:25°C; Device Marking:ZVN2110A; Full Power Rating Temperature:25°C; Lead Spacing:1.27mm; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:700mW; Power Dissipation Pd:700mW; Power Dissipation Ptot Max:700mW; Pulse Current Idm:6A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:2.4V; Voltage Vgs Rds on Measurement:10V
Part # Mfg. Description Stock Price
TN0110N3-G-P002
DISTI # V72:2272_06515669
Microchip Technology IncTrans MOSFET N-CH Si 100V 0.35A 3-Pin TO-92 T/R
RoHS: Compliant
2000
  • 75000:$0.5875
  • 30000:$0.5939
  • 15000:$0.6004
  • 6000:$0.6069
  • 3000:$0.6121
  • 1000:$0.6188
  • 500:$0.6254
  • 250:$0.6323
  • 100:$0.6391
  • 50:$0.6949
  • 25:$0.7026
  • 10:$0.8098
  • 1:$0.8291
TN0110N3-G-P002
DISTI # TN0110N3-G-P002-ND
Microchip Technology IncMOSFET N-CH 100V 350MA TO92-3
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2000:$0.7416
TN0110N3-G-P002
DISTI # 25749249
Microchip Technology IncTrans MOSFET N-CH Si 100V 0.35A 3-Pin TO-92 T/R
RoHS: Compliant
2000
  • 1000:$0.6188
  • 500:$0.6254
  • 250:$0.6323
  • 100:$0.6391
  • 50:$0.6949
  • 25:$0.7026
  • 14:$0.8098
TN0110N3-G-P002
DISTI # TN0110N3-G-P002
Microchip Technology IncTrans MOSFET N-CH 100V 0.35A 3-Pin TO-92 T/R - Tape and Reel (Alt: TN0110N3-G-P002)
RoHS: Compliant
Min Qty: 2000
Container: Reel
Americas - 0
  • 2000:$0.5109
  • 4000:$0.4939
  • 8000:$0.4779
  • 12000:$0.4629
  • 20000:$0.4559
TN0110N3-G-P002
DISTI # 70483877
Microchip Technology IncMOSFET,N-CHANNEL ENHANCEMENT-MODE,100V,3.0 Ohm3 TO-92RVT/R
RoHS: Compliant
0
  • 2000:$0.6800
TN0110N3-G-P002
DISTI # 689-TN0110N3-G-P002
Microchip Technology IncMOSFET N-CH Enhancmnt Mode MOSFET
RoHS: Compliant
3967
  • 1:$0.9800
  • 10:$0.9650
  • 25:$0.8140
  • 100:$0.7420
TN0110N3-G-P002
DISTI # C1S505201327069
Microchip Technology IncTrans MOSFET N-CH Si 100V 0.35A 3-Pin TO-92 T/R
RoHS: Compliant
2000
  • 100:$0.6391
  • 50:$0.6949
  • 25:$0.7026
  • 10:$0.8098
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1658622-8

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Headers & Wire Housings .1CL IDC REC 2X17P C&M 30AU
CMF6010K000FKEB

Mfr.#: CMF6010K000FKEB

OMO.#: OMO-CMF6010K000FKEB

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YR1B210KCC

Mfr.#: YR1B210KCC

OMO.#: OMO-YR1B210KCC

Metal Film Resistors - Through Hole 210 KOhm 1/4W 15PPM
G0034K000FB1280

Mfr.#: G0034K000FB1280

OMO.#: OMO-G0034K000FB1280-1098

Wirewound Resistors - Through Hole 4Kohms 1% 2watts
PR02000201009JR500

Mfr.#: PR02000201009JR500

OMO.#: OMO-PR02000201009JR500-VISHAY

Metal Film Resistors - Through Hole 2watts 10ohms 5%
PR02000201009JA100

Mfr.#: PR02000201009JA100

OMO.#: OMO-PR02000201009JA100-VISHAY

Metal Film Resistors - Through Hole 2watt 10ohms 5%
86130163130345E1LF

Mfr.#: 86130163130345E1LF

OMO.#: OMO-86130163130345E1LF-AMPHENOL-ICC

Headers & Wire Housings FEM CONN FLAT CABLE
MF1/4LCT52R301G

Mfr.#: MF1/4LCT52R301G

OMO.#: OMO-MF1-4LCT52R301G-1088

Metal Film Resistors - Through Hole 1/4 WATT 300 OHM 2%
H4P3K0FZA

Mfr.#: H4P3K0FZA

OMO.#: OMO-H4P3K0FZA-TE-CONNECTIVITY-AMP

Metal Film Resistors - Through Hole H4P 3K0 1% 100PPM
Availability
Stock:
Available
On Order:
1986
Enter Quantity:
Current price of TN0110N3-G-P002 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.97
$0.97
10
$0.96
$9.64
25
$0.81
$20.33
100
$0.74
$74.10
250
$0.65
$163.00
500
$0.56
$278.00
1000
$0.51
$506.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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