2N6468

Product Attribute

Attribute Value

Manufacturer:

Central Semiconductor

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-66-2

Transistor Polarity:

PNP

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

120 V

Collector- Base Voltage VCBO:

130 V

Emitter- Base Voltage VEBO:

5 V

Collector-Emitter Saturation Voltage:

1.2 V, 4 V

Maximum DC Collector Current:

-

Gain Bandwidth Product fT:

5 MHz

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 200 C

Series:

2N6468

DC Current Gain hFE Max:

150

Packaging:

Tube

Brand:

Central Semiconductor

Continuous Collector Current:

4 A

DC Collector/Base Gain hfe Min:

5

Pd - Power Dissipation:

40 W

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

30

Subcategory:

Transistors

Part # Aliases:

2N6468 PBFREE

Tags

2N646, 2N64, 2N6