CGHV40320D-GP4

CGHV40320D-GP4
Mfr. #:
CGHV40320D-GP4
Manufacturer:
N/A
Description:
RF JFET Transistors GaN HEMT Die DC-4.0GHz, 320 Watt
Lifecycle:
New from this manufacturer.
Datasheet:
CGHV40320D-GP4 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
CGHV40320D-GP4 DatasheetCGHV40320D-GP4 Datasheet (P4-P6)CGHV40320D-GP4 Datasheet (P7)
ECAD Model:
More Information:
CGHV40320D-GP4 more Information
Product Attribute
Attribute Value
Manufacturer:
Qorvo
Product Category:
RF JFET Transistors
RoHS:
Y
Transistor Type:
HEMT
Technology:
GaN SiC
Gain:
21.8 dB
Transistor Polarity:
N-Channel
Id - Continuous Drain Current:
1.7 A
Output Power:
178 W
Maximum Drain Gate Voltage:
65 V
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 85 C
Pd - Power Dissipation:
67 W
Mounting Style:
SMD/SMT
Package / Case:
DFN-6
Packaging:
Reel
Application:
Military Radar, Jammers,Test Instrumentation,Wideband or Narrowband Amplifiers,Land Mobile and Military Radio Communications
Configuration:
Single Triple Drain
Operating Frequency:
1.2 GHz to 2.7 GHz
Brand:
Qorvo
Development Kit:
QPD1013EVB01
Moisture Sensitive:
Yes
Product Type:
RF JFET Transistors
Factory Pack Quantity:
100
Subcategory:
Transistors
Tags
CGHV4, CGHV, CGH
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***fspeed SCT
Aerospace & Defense, 50 V, 4 GHz, 320W, Die, RoHS
***fspeed
320-W; 4.0-GHz; GaN HEMT Die
***i-Key
RF MOSFET HEMT 50V DIE
***ical
Trans JFET 150V 12A GaN Bare Die Gel/T/R
***horized Procurement Solutions
OEMs, CMs ONLY (NO BROKERS)
***hardson RFPD
RF POWER TRANSISTOR
GaN HEMTs
Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
Part # Mfg. Description Stock Price
CGHV40320D-GP4
DISTI # CGHV40320D-GP4-ND
WolfspeedRF MOSFET HEMT 50V DIE
RoHS: Compliant
Min Qty: 10
Container: Tray
On Order
  • 10:$255.5500
CGHV40320D-GP4
DISTI # 941-CGHV40320D
Cree, Inc.RF JFET Transistors GaN HEMT Die DC-4.0GHz, 320 Watt
RoHS: Compliant
50
  • 10:$249.3200
CGHV40320D-GP4
DISTI # CGHV40320D-GP4
WolfspeedRF POWER TRANSISTOR
RoHS: Compliant
0
  • 50:$232.3200
Image Part # Description
CGHV40320D-GP4

Mfr.#: CGHV40320D-GP4

OMO.#: OMO-CGHV40320D-GP4

RF JFET Transistors GaN HEMT Die DC-4.0GHz, 320 Watt
CGHV40320D-GP4

Mfr.#: CGHV40320D-GP4

OMO.#: OMO-CGHV40320D-GP4-WOLFSPEED

RF MOSFET HEMT 50V DIE
CGHV40320D

Mfr.#: CGHV40320D

OMO.#: OMO-CGHV40320D-318

RF JFET Transistors DC-4.0GHz 320W GaN 50Volt
Availability
Stock:
50
On Order:
2033
Enter Quantity:
Current price of CGHV40320D-GP4 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
10
$249.32
$2 493.20
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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