IPD65R400CEAUMA1

IPD65R400CEAUMA1
Mfr. #:
IPD65R400CEAUMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET CONSUMER
Lifecycle:
New from this manufacturer.
Datasheet:
IPD65R400CEAUMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPD65R400CEAUMA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PG-TO-252-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
650 V
Id - Continuous Drain Current:
15.1 A
Rds On - Drain-Source Resistance:
400 mOhms
Vgs th - Gate-Source Threshold Voltage:
2.5 V
Vgs - Gate-Source Voltage:
10 V
Qg - Gate Charge:
39 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
118 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
CoolMOS
Packaging:
Reel
Height:
2.3 mm
Length:
6.5 mm
Series:
CoolMOS CE
Transistor Type:
1 N-Channel
Width:
6.22 mm
Brand:
Infineon Technologies
Fall Time:
8 ns
Moisture Sensitive:
Yes
Product Type:
MOSFET
Rise Time:
7 ns
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
57 ns
Typical Turn-On Delay Time:
10 ns
Part # Aliases:
IPD65R400CE SP001466800
Unit Weight:
0.011993 oz
Tags
IPD65R4, IPD65R, IPD65, IPD6, IPD
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
Single N-Channel 650 V 400 mOhm 39 nC CoolMOS Power Mosfet - TO-252-3, PG-TO252-3, RoHS
***ark
Mosfet, N-Ch, 650V, 15.1A, To-252 Rohs Compliant: Yes
***ineon
Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ CE Power MOSFETs
Infineon's CoolMOS™ CE Power MOSFETs are a technology platform of high voltage power MOSFETs that are designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. CoolMOS™ CE portfolio offers 500V, 600V, 650V, 700V, and 800V devices targeting low power chargers for mobile devices and power tools, adapters for notebook and laptops, LCD, LED TV and LED lighting. This new series of CoolMOS™ is cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still being price attractive.
CoolMOS CE Power MOSFETs - 600-650V
Infineon 600V/650V CoolMOS™ CE N-Channel Power MOSFETs are a technology platform of Infineon's market leading high voltage power MOSFET designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. These 600V/650V CoolMOS™ MOSFETs are cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still been price attractive. These devices target low power chargers for mobile devices and power tools, LCD, LED TV and LED lighting applications.
Part # Mfg. Description Stock Price
IPD65R400CEAUMA1
DISTI # V72:2272_13979488
Infineon Technologies AGTrans MOSFET N-CH 650V 15.1A 3-Pin(2+Tab) DPAK T/R0
    IPD65R400CEAUMA1
    DISTI # V36:1790_13979488
    Infineon Technologies AGTrans MOSFET N-CH 650V 15.1A 3-Pin(2+Tab) DPAK T/R0
    • 2500000:$0.4184
    • 1250000:$0.4188
    • 250000:$0.4477
    • 25000:$0.4989
    • 2500:$0.5075
    IPD65R400CEAUMA1
    DISTI # IPD65R400CEAUMA1TR-ND
    Infineon Technologies AGMOSFET N-CH 650V TO-252
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)
    On Order
    • 25000:$0.3826
    • 12500:$0.3867
    • 5000:$0.4018
    • 2500:$0.4229
    IPD65R400CEAUMA1
    DISTI # IPD65R400CEAUMA1CT-ND
    Infineon Technologies AGMOSFET N-CH 650V TO-252
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Temporarily Out of Stock
    • 1000:$0.4667
    • 500:$0.5912
    • 100:$0.7156
    • 10:$0.9180
    • 1:$1.0300
    IPD65R400CEAUMA1
    DISTI # IPD65R400CEAUMA1DKR-ND
    Infineon Technologies AGMOSFET N-CH 650V TO-252
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Temporarily Out of Stock
    • 1000:$0.4667
    • 500:$0.5912
    • 100:$0.7156
    • 10:$0.9180
    • 1:$1.0300
    IPD65R400CEAUMA1
    DISTI # IPD65R400CEAUMA1
    Infineon Technologies AGTrans MOSFET N-CH 700V 15.1A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD65R400CEAUMA1)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel
    Americas - 0
    • 25000:$0.3649
    • 15000:$0.3719
    • 10000:$0.3849
    • 5000:$0.3989
    • 2500:$0.4139
    IPD65R400CEAUMA1
    DISTI # SP001466800
    Infineon Technologies AGTrans MOSFET N-CH 700V 15.1A 3-Pin TO-252 T/R (Alt: SP001466800)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel
    Europe - 0
    • 25000:€0.3419
    • 15000:€0.3679
    • 10000:€0.3989
    • 5000:€0.4349
    • 2500:€0.5319
    IPD65R400CEAUMA1
    DISTI # 34AC1686
    Infineon Technologies AGMOSFET, N-CH, 650V, 15.1A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:15.1A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.36ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes625
    • 1000:$0.4360
    • 500:$0.5520
    • 250:$0.5890
    • 100:$0.6250
    • 50:$0.6880
    • 25:$0.7510
    • 10:$0.8140
    • 1:$0.9490
    IPD65R400CEAUMA1
    DISTI # 726-IPD65R400CEAUMA1
    Infineon Technologies AGMOSFET CONSUMER
    RoHS: Compliant
    3521
    • 1:$0.9400
    • 10:$0.8060
    • 100:$0.6190
    • 500:$0.5470
    • 1000:$0.4320
    IPD65R400CEAUMA1
    DISTI # 2781175
    Infineon Technologies AGMOSFET, N-CH, 650V, 15.1A, TO-252
    RoHS: Compliant
    2305
    • 5000:$0.5810
    • 1000:$0.6120
    • 500:$0.6480
    • 250:$0.7490
    • 100:$0.8870
    • 25:$1.0900
    • 5:$1.2600
    IPD65R400CEAUMA1
    DISTI # 2781175
    Infineon Technologies AGMOSFET, N-CH, 650V, 15.1A, TO-2522297
    • 100:£0.5910
    • 10:£0.8380
    • 1:£1.0300
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    Availability
    Stock:
    11
    On Order:
    1994
    Enter Quantity:
    Current price of IPD65R400CEAUMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $0.94
    $0.94
    10
    $0.81
    $8.06
    100
    $0.62
    $61.90
    500
    $0.55
    $273.50
    1000
    $0.43
    $432.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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