T2G6001528-SG

T2G6001528-SG
Mfr. #:
T2G6001528-SG
Manufacturer:
Qorvo
Description:
RF JFET Transistors DC-6.0GHz 15 Watt 28V GaN
Lifecycle:
New from this manufacturer.
Datasheet:
T2G6001528-SG Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
T2G6001528-SG more Information
Product Attribute
Attribute Value
Manufacturer:
Qorvo
Product Category:
RF JFET Transistors
RoHS:
Y
Transistor Type:
HEMT
Technology:
GaN SiC
Gain:
15 dB
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
5 A
Output Power:
17 W
Pd - Power Dissipation:
28 W
Mounting Style:
SMD/SMT
Packaging:
Tray
Configuration:
Single
Operating Frequency:
6 GHz
Series:
T2G
Brand:
Qorvo
Moisture Sensitive:
Yes
Product Type:
RF JFET Transistors
Factory Pack Quantity:
100
Subcategory:
Transistors
Part # Aliases:
1113256
Tags
T2G6001528-S, T2G6001, T2G6, T2G
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC- 6 GHz, 15 W, 15 dB, 28 V, GaN
*** Services
CoC and 2-years warranty / RFQ for pricing
T2G GaN HEMT Transistors
QorvoT2G GaN HEMT Transistors are 15W to 30W (P3dB) discrete GaN on SiC HEMT which operate from DC to 3.5GHz and 6.0GHz. These devices are constructed with Qorvo's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Part # Mfg. Description Stock Price
T2G6001528-SG
DISTI # 772-T2G6001528-SG
QorvoRF JFET Transistors DC-6.0GHz 15 Watt 28V GaN
RoHS: Compliant
65
  • 1:$105.7500
  • 25:$95.4400
T2G6001528-SG-EVB
DISTI # 772-T2G6001528SGEVB
QorvoRF Development Tools
RoHS: Compliant
0
  • 1:$875.0000
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Availability
Stock:
146
On Order:
2129
Enter Quantity:
Current price of T2G6001528-SG is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$105.75
$105.75
25
$95.44
$2 386.00
100
$86.13
$8 613.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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