ZTX657

Mfr. #:: ZTX657
Manufacturer:: Diodes Incorporated
Description:: Bipolar Transistors - BJT NPN Super E-Line
Lifecycle:: New from this manufacturer.
Datasheet:: ZTX657 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: ZTX657 Datasheet
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Diodes Incorporated

Product Category:: Bipolar Transistors - BJT

RoHS:: Y

Mounting Style:: Through Hole

Package / Case:: TO-92-3

Transistor Polarity:: NPN

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 300 V

Collector- Base Voltage VCBO:: 300 V

Emitter- Base Voltage VEBO:: 5 V

Collector-Emitter Saturation Voltage:: 500 mV

Maximum DC Collector Current:: 500 mA

Gain Bandwidth Product fT:: 30 MHz

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 200 C

Series:: ZTX657

DC Current Gain hFE Max:: 50 at 100 mA, 5 V

Height:: 4.01 mm

Length:: 4.77 mm

Packaging:: Bulk

Width:: 2.41 mm

Brand:: Diodes Incorporated

Continuous Collector Current:: 0.5 A

DC Collector/Base Gain hfe Min:: 50 at 100 mA, 5 V, 40 at 10 mA, 5 V

Pd - Power Dissipation:: 1 W

Product Type:: BJTs - Bipolar Transistors

Factory Pack Quantity:: 4000

Subcategory:: Transistors

Unit Weight:: 0.016000 oz

Tags: ZTX657, ZTX65, ZTX6, ZTX

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

ZTX657 Description

***ure Electronics: ZTX657 Series 300 V 0.5 A NPN Silicon Planar Medium Power Transistor - TO-92-3

***ical: Trans GP BJT NPN 300V 0.5A Automotive 3-Pin E-Line

***ponent Sense: Trans GP BJT NPN 300V 0.5A 3-Pin E-Line

***trelec: Power Transistor Housing type: E-Line Polarity: NPN Amplification: ...50 Amplification max.: 50 Collector-emitter voltage: 300 V Power dissipation: 1 W

***i-Key: TRANS NPN 300V 0.5A E-LINE

***ark: Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency ft:-; Power Dissipation Pd:1W; DC Collector Current:500mA; DC Current Gain hFE:50hFE; No. of Pins:3Pins; Operating Temperature Max:200�C; MSL:- RoHS Compliant: No

***ment14 APAC: Prices include import duty and tax. TRANSISTOR, NPN, E-LINE; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency ft:-; Power Dissipation Pd:1W; DC Collector Current:500mA; DC Current Gain hFE:50hFE; Transistor Case Style:E-Line; No. of Pins:3Pins; Operating Temperature Max:200°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):500mV; Continuous Collector Current Ic Max:500mA; Current Ic @ Vce Sat:100mA; Current Ic Continuous a Max:500mA; Current Ic hFE:100mA; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:30MHz; Gain Bandwidth ft Typ:30MHz; Hfe Min:50; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +200°C; Power Dissipation Ptot Max:1W; Voltage Vcbo:300V

***nell: TRANSISTOR, NPN, E-LINE; Biegunowość tranzystora:NPN; Napięcie kolektor - emiter V(br)ceo:300V; Częstotliwość przejścia ft:-; Straty mocy Pd:1W; Prąd kolektora DC:500mA; Wzmocnienie prądu DC hFE:50hFE; Rodzaj obudowy tranzystora:E-Line; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:200°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:-; Substancje SVHC:No SVHC (15-Jan-2018); Hfe, min.:50; Liczba tranzystorów:1; Maks. ciągły prąd kolektora Ic:500mA; Napięcie Vcbo:300V; Napięcie nasycenia kolektor - emiter Vce(on):500mV; Pasmo wzmocnienia ft, min.:30MHz; Pasmo wzmocnienia ft, typ.:30MHz; Prąd Ic hFE:100mA; Prąd Ic przy Vce Sat:100mA; Prąd Ic stały a, maks.:500mA; Straty mocy Ptot, maks.:1W; Temperatura przy pełnej mocy znamionowej:25°C; Temperatura robocza, min.:-55°C; Zakres temperatury roboczej:-55°C do +200°C

Market price

Part #	Mfg.	Description	Stock	Price
ZTX657 DISTI # ZTX657-ND	Diodes Incorporated	TRANS NPN 300V 0.5A E-LINE RoHS: Compliant Min Qty: 1 Container: Bulk	4455In Stock	1000:$0.4340 500:$0.5497 100:$0.6654 10:$0.8530 1:$0.9500
ZTX657STOA DISTI # ZTX657STOA-ND	Diodes Incorporated	TRANS NPN 300V 0.5A E-LINE RoHS: Compliant Min Qty: 16000 Container: Tape & Reel (TR)	Limited Supply - Call
ZTX657STOB DISTI # ZTX657STOB-ND	Diodes Incorporated	TRANS NPN 300V 0.5A E-LINE RoHS: Compliant Min Qty: 2000 Container: Tape & Reel (TR)	Limited Supply - Call
ZTX657STZ DISTI # ZTX657STZ-ND	Diodes Incorporated	TRANS NPN 300V 0.5A E-LINE RoHS: Compliant Min Qty: 2000 Container: Tape & Box (TB)	Temporarily Out of Stock	2000:$0.4576
ZTX657 DISTI # ZTX657	Diodes Incorporated	Trans GP BJT NPN 300V 0.5A 3-Pin E-Line - Bulk (Alt: ZTX657) RoHS: Not Compliant Min Qty: 4000 Container: Bulk	Americas - 6764	4000:$0.2719 8000:$0.2649 16000:$0.2579 24000:$0.2509 40000:$0.2449
ZTX657 DISTI # ZTX657	Diodes Incorporated	Trans GP BJT NPN 300V 0.5A 3-Pin E-Line (Alt: ZTX657) RoHS: Compliant Min Qty: 4000	Europe - 0	4000:€0.2919 8000:€0.2779 16000:€0.2729 24000:€0.2689 40000:€0.2569
ZTX657STZ DISTI # ZTX657STZ	Diodes Incorporated	Trans GP BJT NPN 300V 0.5A 3-Pin E-Line Box (Alt: ZTX657STZ) RoHS: Compliant Min Qty: 2000 Container: Box	Europe - 0	2000:€0.2919 4000:€0.2779 8000:€0.2729 12000:€0.2689 20000:€0.2569
ZTX657. DISTI # 61AC2982	Diodes Incorporated	Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:300V,Transition Frequency ft:-,Power Dissipation Pd:1W,DC Collector Current:500mA,DC Current Gain hFE:50hFE,No. of Pins:3Pins,Operating Temperature Max:200°C,MSL:- RoHS Compliant: No	6764	1:$0.3000 8000:$0.2850 16000:$0.2720 24000:$0.2590 40000:$0.2540
ZTX657 DISTI # 522-ZTX657	Diodes Incorporated	Bipolar Transistors - BJT NPN Super E-Line RoHS: Compliant	5678	1:$0.8700 10:$0.7370 100:$0.5660 500:$0.5000 1000:$0.3950
ZTX657STZ DISTI # 522-ZTX657STZ	Diodes Incorporated	Bipolar Transistors - BJT NPN Super E-Line RoHS: Compliant	1427	1:$0.8700 10:$0.7370 100:$0.5660 500:$0.5000 1000:$0.3950
ZTX657STOB DISTI # 522-ZTX657STOB	Diodes Incorporated	Bipolar Transistors - BJT NPN Super E-Line RoHS: Compliant	0
ZTX657STOA DISTI # 522-ZTX657STOA	Diodes Incorporated	Bipolar Transistors - BJT NPN Super E-Line RoHS: Compliant	0
ZTX657STOA	Zetex / Diodes Inc	Bipolar Junction Transistor, NPN Type, TO-92	13750	7103:$0.2016 3334:$0.2112 1:$0.7680
ZTX657STOB	Zetex / Diodes Inc	Bipolar Junction Transistor, NPN Type, TO-92	4000	3334:$0.2112 745:$0.2400 1:$0.7680
ZTX657	Zetex / Diodes Inc		74
ZTX657STZ	Zetex / Diodes Inc		1770
ZTX657STZ	Zetex / Diodes Inc		24678
ZTX657 DISTI # XSFP00000156899	Diodes Incorporated	RoHS: Compliant	5384	4000:$0.4667 5384:$0.4375

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Availability

Stock:: Available
On Order:: 1987
Enter Quantity:

Current price of ZTX657 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.86~~; ~~$0.86~~

10: ~~$0.74~~; ~~$7.37~~

100: ~~$0.57~~; ~~$56.60~~

500: ~~$0.50~~; ~~$250.00~~

1000: ~~$0.40~~; ~~$395.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes