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IPB180N03S4L-01

IPB180N03S4L-01
Mfr. #:
IPB180N03S4L-01
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS-T2
Lifecycle:
New from this manufacturer.
Datasheet:
IPB180N03S4L-01 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPB180N03S4L-01 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-7
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
180 A
Rds On - Drain-Source Resistance:
1.05 mOhms
Vgs - Gate-Source Voltage:
16 V
Qg - Gate Charge:
187 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
188 W
Configuration:
Single
Qualification:
AEC-Q101
Tradename:
OptiMOS
Packaging:
Reel
Height:
4.4 mm
Length:
10 mm
Series:
OptiMOS-T2
Transistor Type:
1 N-Channel
Width:
9.25 mm
Brand:
Infineon Technologies
Fall Time:
23 ns
Product Type:
MOSFET
Rise Time:
5 ns
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
57 ns
Typical Turn-On Delay Time:
8 ns
Part # Aliases:
IPB180N03S4L01ATMA1 IPB18N3S4L1XT SP000555002
Unit Weight:
0.056438 oz
Tags
IPB180N03, IPB180N0, IPB180N, IPB18, IPB1, IPB
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
20V to 40V N-Channel Automotive MOSFETs
Infineon Technologies 20V to 40V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8),  TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs address broad range of applications, including EPS motor control, 3-phase and H-bridge motors, HVAC fan control, and electric pumps in combination with PWM control.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Part # Mfg. Description Stock Price
IPB180N03S4L01ATMA1
DISTI # V72:2272_06383155		Infineon Technologies AGTrans MOSFET N-CH 30V 180A Automotive 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant		0
    IPB180N03S4L01ATMA1
    DISTI # V36:1790_06383155    		Infineon Technologies AGTrans MOSFET N-CH 30V 180A Automotive 7-Pin(6+Tab) D2PAK T/R
    RoHS: Compliant    		0
    • 1000000:$1.0010
    • 500000:$1.0030
    • 100000:$1.1120
    • 10000:$1.2810
    • 1000:$1.3090
    IPB180N03S4L01ATMA1
    DISTI # IPB180N03S4L01ATMA1TR-ND    		Infineon Technologies AGMOSFET N-CH 30V 180A TO263-7-3
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 1000:$1.3086
    IPB180N03S4L-01
    DISTI # IPB180N03S4L-01    		Infineon Technologies AGTrans MOSFET N-CH 30V 180A 7-Pin TO-263 T/R - Bulk (Alt: IPB180N03S4L-01)
    RoHS: Not Compliant
    Min Qty: 325
    Container: Bulk    		Americas - 0
    • 3250:$0.9779
    • 1625:$0.9959
    • 975:$1.0299
    • 650:$1.0689
    • 325:$1.1089
    IPB180N03S4L01ATMA1
    DISTI # IPB180N03S4L01ATMA1    		Infineon Technologies AGTrans MOSFET N-CH 30V 180A 7-Pin(6+Tab) TO-263 - Bulk (Alt: IPB180N03S4L01ATMA1)
    RoHS: Compliant
    Min Qty: 325
    Container: Bulk    		Americas - 0
    • 3250:$0.9779
    • 1625:$0.9959
    • 975:$1.0299
    • 650:$1.0689
    • 325:$1.1089
    IPB180N03S4L01ATMA1
    DISTI # IPB180N03S4L01ATMA1    		Infineon Technologies AGTrans MOSFET N-CH 30V 180A 7-Pin(6+Tab) TO-263 - Tape and Reel (Alt: IPB180N03S4L01ATMA1)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel    		Americas - 0
    • 10000:$1.0919
    • 6000:$1.1109
    • 4000:$1.1499
    • 2000:$1.1929
    • 1000:$1.2379
    IPB180N03S4L01ATMA1
    DISTI # SP000555002    		Infineon Technologies AGTrans MOSFET N-CH 30V 180A 7-Pin(6+Tab) TO-263 (Alt: SP000555002)
    RoHS: Compliant
    Min Qty: 1000    		Europe - 0
    • 10000:€1.0409
    • 6000:€1.0829
    • 4000:€1.1179
    • 2000:€1.2049
    • 1000:€1.5499
    IPB180N03S4L-01
    DISTI # 726-IPB180N03S4L-01    		Infineon Technologies AGMOSFET N-Ch 30V 180A D2PAK-6 OptiMOS-T2
    RoHS: Compliant    		105
    • 1:$2.5200
    • 10:$2.1400
    • 100:$1.7100
    • 500:$1.5000
    • 1000:$1.2400
    • 2000:$1.1600
    • 5000:$1.1100
    IPB180N03S4L-01Infineon Technologies AGPower Field-Effect Transistor, 180A I(D), 30V, 0.00105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
    RoHS: Compliant    		492
    • 1000:$1.1300
    • 500:$1.1900
    • 100:$1.2400
    • 25:$1.2900
    • 1:$1.3900
    IPB180N03S4L01ATMA1Infineon Technologies AGPower Field-Effect Transistor, 180A I(D), 30V, 0.00105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
    RoHS: Compliant    		1856
    • 1000:$1.0100
    • 500:$1.0700
    • 100:$1.1100
    • 25:$1.1600
    • 1:$1.2500
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    Availability
    Stock:
    105
    On Order:
    2088
    Enter Quantity:
    Current price of IPB180N03S4L-01 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $2.52
    $2.52
    10
    $2.14
    $21.40
    100
    $1.71
    $171.00
    500
    $1.50
    $750.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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