2N929A

Product Attribute

Attribute Value

Manufacturer:

Central Semiconductor

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-18-3

Transistor Polarity:

NPN

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

60 V

Collector- Base Voltage VCBO:

60 V

Emitter- Base Voltage VEBO:

6 V

Collector-Emitter Saturation Voltage:

0.5 V

Gain Bandwidth Product fT:

45 MHz

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 175 C

Series:

2N929A

DC Current Gain hFE Max:

350 at 10 mA, 5 V

Packaging:

Bulk

Brand:

Central Semiconductor

Continuous Collector Current:

30 mA

DC Collector/Base Gain hfe Min:

25 at 1 uA, 5 V

Pd - Power Dissipation:

1.8 W

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

2000

Subcategory:

Transistors

Part # Aliases:

2N929A PBFREE

Tags

2N92, 2N9