CSD25211W1015

Mfr. #:: CSD25211W1015
Description:: MOSFET PCh NexFET Power MOSFET
Lifecycle:: New from this manufacturer.
Datasheet:: CSD25211W1015 Datasheet
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More Information:: CSD25211W1015 more Information CSD25211W1015 Product Details

Product Attribute
Attribute Value

Manufacturer:: Texas Instruments

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: DSBGA-6

Number of Channels:: 1 Channel

Transistor Polarity:: P-Channel

Vds - Drain-Source Breakdown Voltage:: 20 V

Id - Continuous Drain Current:: 3.2 A

Rds On - Drain-Source Resistance:: 44 mOhms

Vgs th - Gate-Source Threshold Voltage:: 800 mV

Vgs - Gate-Source Voltage:: 6 V

Qg - Gate Charge:: 3.4 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 1 W

Configuration:: Single

Tradename:: NexFET

Packaging:: Reel

Height:: 0.625 mm

Length:: 1.5 mm

Series:: CSD25211W1015

Transistor Type:: 1 P-Channel

Width:: 1 mm

Brand:: Texas Instruments

Forward Transconductance - Min:: 12 S

Fall Time:: 14.2 ns

Product Type:: MOSFET

Rise Time:: 8.8 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 36.9 ns

Typical Turn-On Delay Time:: 13.6 ns

Unit Weight:: 0.000060 oz

Tags: CSD252, CSD25, CSD2, CSD

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD25211W1015 Description

***NGYU ELECTRONICS: -20-V, P channel NexFET™ power MOSFET, single WLP 1 mm x 1.5 mm, 33 mOhm, gate ESD protection

***et: Trans MOSFET N-CH 20V 3.2A 6-Pin DSBGA T/R

*** Stop Electro: Small Signal Field-Effect Transistor, 3.2A I(D), 20V, 1-Element, P-Channel, Metal-oxide Semiconductor FET

***el Electronic: MOSFET PCh NexFET Power MOSFET

***itex: Transistor: N-MOSFET; unipolar; 20V; 3.9A; 0.031ohm; 0.75W; -55+150 deg.C; SMD; SOT23

***ure Electronics: Single N-Channel 20 V 0.031 Ohms Surface Mount Power Mosfet - SOT-23

***el Electronic: VISHAY SILICONIX SI2312BDS-T1-E3 MOSFET, N CHANNEL, 20V, 0.025OHM, 3.9A, SOT-23-3, FULL REEL

***enic: 20V 3.9A 750mW 31m´Î@4.5V5A 850mV@250Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS

***ical: Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R

***roFlash: Small Signal Field-Effect Transistor, 3.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***ark: Mosfet, N Channel, 20V, 0.025Ohm, 3.9A, Sot-23-3, Full Reel; Transistor Polarity:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3.9A; On Resistance Rds(On):0.025Ohm; Transistor Mounting:surface Mount; Msl:- Rohs Compliant: No

***ment14 APAC: MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:3.9A; Drain Source Voltage Vds:20V; On Resistance Rds(on):47mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:850mV; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:2312; Current Id Max:5A; Package / Case:SOT-23; Power Dissipation Pd:750µW; Pulse Current Idm:15A; SMD Marking:M2; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:850mV; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Max:0.85V; Voltage Vgs th Min:0.45V

***ure Electronics: Dual N/P-Channel 20 V 2.1/1.3 W 11.3/11 nC Silicon SMT Mosfet - 1206-8 ChipFET

***et Europe: Transistor MOSFET Array N-CH/P-CH 20V 4A 8-Pin Chip FET T/R

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Rds(on) Test Voltage, Vgs:8V; Package/Case:8-1206; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C ;RoHS Compliant: Yes

***ment14 APAC: DUAL N/P CHANNEL MOSFET, 20V, 1206; Tran; DUAL N/P CHANNEL MOSFET, 20V, 1206; Transistor Polarity:N and P Channel; Continuous Drain Current Id, N Channel:4A; Continuous Drain Current Id, P Channel:-3.1A; Drain Source Voltage Vds, N Channel:20V

***nell: MOSFET, NP CH, 20V, 1206; Transistor Polarity:N and P Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.03ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:1206; No. of Pins:8

***roFlash: P-Channel 20 V 42.5 mO Surface Mount Enhancement Mode Mosfet - SOT-23

***ment14 APAC: MOSFET,P CH,20V,4A,SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-4A; Source Voltage Vds:-20V; On Resistance

***trelec: MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: P Variants: Enhancement mode Power dissipation: 0.9 W

***nell: MOSFET,P CH,20V,4A,SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: -4A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.031ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -550mV; Power Dissipation Pd: 900mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: -4A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Voltage Vgs Max: -8V

*** Source Electronics: Trans MOSFET P-CH 20V 4.9A 3-Pin SOT-23 T/R / MOSFET P-CH 20V 3.6A SOT-23

***ure Electronics: Single P-Channel 20 V 0.81 W 15.4 nC Silicon Surface Mount Mosfet - SOT-23

***ment14 APAC: MOSFET, P-CH, -20V, -3.6A, SOT23; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.6A; Source Voltage Vds:-20V; On Resistance

***trelec: MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: P Variants: Enhancement mode Power dissipation: 0.81 W

***nell: MOSFET, P-CH, -20V, -3.6A, SOT23; Transistor Polarity: P Channel; Continuous Drain Current Id: -3.6A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.023ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -700mV; Power Dissipation Pd: 810mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***(Formerly Allied Electronics): SI1424EDH-T1-GE3 N-channel MOSFET Transistor; 4 A; 20 V; 6-Pin SOT-363

***ical: Trans MOSFET N-CH 20V 4A 6-Pin SC-70 T/R

*** Electronics: VISHAY - SI1424EDH-T1-GE3 - MOSFET, N CH, W/D,20V, 4A, SOT363

***ca Corp: Small Signal Field-Effect Transistor, 4A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***S: French Electronic Distributor since 1988

***nell: MOSFET, N CH, W/D, 20V, 4A, SOT363; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.027ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:2.8W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-363; No. of Pins:6; MSL:-; Operating Temperature Range:-55°C to +150°C

***Yang: Trans MOSFET N-CH 20V 3.6A 3-Pin SOT-323 T/R - Product that comes on tape, but is not reeled

***emi: Single N-Channel Power MOSFET 20V, 3.6A, 24mΩ

***ure Electronics: NTR Series 20 V 24 mOhm 0.47 W Surface Mount N-Channel Power Mosfet - SOT-23

***ment14 APAC: MOSFET, N-CH, 20V, 3.6A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:3.6A; Source Voltage Vds:20V; On Resistance

*** Stop Electro: Small Signal Field-Effect Transistor, 3.6A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***ark: MOSFET, N-CH, 20V, 3.6A, 150DEG C, 0.47W; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes

***nell: MOSFET, N-CH, 20V, 3.6A, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.6A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.018ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 470mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 3.6 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 55 / Gate-Source Voltage V = 8 / Fall Time us = 4.67 / Rise Time ns = 14 / Turn-OFF Delay Time ns = 420 / Turn-ON Delay Time ns = 7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 470

***AS INS: The device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile.

CSD25211W1015 More Information

NexFET P-Channel Power MOSFETs: OMO Electronic NexFET P-Channel Power MOSFETs are designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. These NexFET MOSFETs feature ultra low on-resistance and ultra-low Qg and Qgd as well as a small footprint of 1.0mm x 1.5mm.

TI P-Channel MOSFETs - 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

Part #	Description	Stock	Price
CSD25211W1015 DISTI # 296-36578-1-ND	MOSFET P-CH 20V 3.2A 6DSBGA RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	8375In Stock	1000:$0.2311 500:$0.2991 100:$0.4079 10:$0.5440 1:$0.6500
CSD25211W1015 DISTI # 296-36578-6-ND	MOSFET P-CH 20V 3.2A 6DSBGA RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	8375In Stock	1000:$0.2311 500:$0.2991 100:$0.4079 10:$0.5440 1:$0.6500
CSD25211W1015 DISTI # 296-36578-2-ND	MOSFET P-CH 20V 3.2A 6DSBGA RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	15000:$0.1782 6000:$0.1914 3000:$0.2046
CSD25211W1015 DISTI # CSD25211W1015	Trans MOSFET N-CH 20V 3.2A 6-Pin DSBGA T/R (Alt: CSD25211W1015) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
CSD25211W1015 DISTI # CSD25211W1015	Trans MOSFET N-CH 20V 3.2A 6-Pin DSBGA T/R - Tape and Reel (Alt: CSD25211W1015) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.1739 6000:$0.1649 12000:$0.1599 18000:$0.1539 30000:$0.1499
CSD25211W1015	P-Channel NexFET&#153,Power MOSFET	5730	1000:$0.1400 750:$0.1500 500:$0.1900 250:$0.2300 100:$0.2500 25:$0.3000 10:$0.3200 1:$0.3600
CSD25211W1015 DISTI # 595-CSD25211W1015	MOSFET PCh NexFET Power MOSFET RoHS: Compliant	786	1:$0.5200 10:$0.4300 100:$0.2640 1000:$0.2040 3000:$0.1740

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CSD25211W1015

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes