BLS6G2731-6G112

Mfr. #:: BLS6G2731-6G112
Manufacturer:: Ampleon
Description:: - Bulk (Alt: BLS6G2731-6G112)
Lifecycle:: New from this manufacturer.
Datasheet:: BLS6G2731-6G112 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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Tags: BLS6G2731-6, BLS6G2731, BLS6G273, BLS6G27, BLS6G2, BLS6, BLS

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BLS6G2731-6G112 Description

***ark: N CHANNEL S-BAND LDMOS TRANSISTOR, 32V, 2700MHZ - 3100MHZ, 2-SOT-975C

***ical: Trans RF MOSFET N-CH 60V 3.5A 3-Pin CDFM Bulk

***S: French Electronic Distributor since 1988

***i-Key: TRANS S-BAND PWR LDMOS SOT975C

***itex: Transistor: P-MOSFET; unipolar; -20V; -4.3A; 0.054ohm; 1.3W; -55+150 deg.C; SMD; SOT23

***ineon SCT: -20V Single P-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS

***ure Electronics: Single P-Channel 20 V 54 mOhm 6.9 nC HEXFET® Power Mosfet - SOT-23

***roFlash: Power Field-Effect Transistor, 4.3A I(D), 20V, 0.054ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***ark: Transistor Polarity:p Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.042Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.1V Rohs Compliant: Yes

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; P-Channel MOSFET; SOT-23 Footprint | Target Applications: Battery Protection; DC Switches; Load Switch; Load Switch High Side; Load Switch Low Side

***trelec: Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -4.3 / Drain-Source Voltage (Vds) V = -20 / ON Resistance (Rds(on)) mOhm = 95 / Gate-Source Voltage V = 12 / Fall Time ns = 25 / Rise Time ns = 12 / Turn-OFF Delay Time ns = 34 / Turn-ON Delay Time ns = 7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 1.3

***ure Electronics: Single N-Channel 40 V 78 mOhm 3.9 nC HEXFET® Power Mosfet - SOT-23

***ineon SCT: 40V Single N-Channel HEXFET Power MOSFET in a Micro3 package, SOT23-3, RoHS

***ark: N Channel, MOSFET, 40V, 3.6 A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:3.6A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.056ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V ;RoHS Compliant: Yes

***trelec: MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Power dissipation: 1.3 W

***(Formerly Allied Electronics): MOSFET, 40V, 3.6A, 56 MOHM, 2.6 NC QG, SOT-23

***et: Trans MOSFET N-CH 40V 3.6A 3-Pin SOT-23 T/R

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; SOT-23 Footprint | Target Applications: DC Switches; Load Switch; Load Switch High Side

***(Formerly Allied Electronics): MOSFET, 20V, 4.1A, 46 MOHM, 3.5 NC QG, 2.5V DRIVE CAPABLE, SOT-23

***ineon SCT: 20V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS

***ure Electronics: Single N-Channel 20 V 66 mOhm 3.5 nC HEXFET® Power Mosfet - SOT-23

*** Source Electronics: Trans MOSFET N-CH 20V 4.1A 3-Pin SOT-23 T/R / MOSFET N-CH 20V 4.1A SOT-23

***trelec: MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Power dissipation: 1.3 W

***roFlash: Power Field-Effect Transistor, 4.1A I(D), 20V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***nell: MOSFET,N CH,DIODE,20V,4.1A,SOT-23; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.03ohm; Rds(on) Test Voltage Vgs:4.5V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:4.1A; Power Dissipation Pd:1.3W; Voltage Vgs Max:12V

***ineon: Benefits: RoHS Compliant; Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; SOT-23 Footprint | Target Applications: Battery Protection; DC Switches; Load Switch; Load Switch High Side; Load Switch Low Side

***ure Electronics: Single N-Channel 30 V 68 mO 3 nC Surface Mount Power Mosfet - SOT-23

*** Source Electronics: Trans MOSFET N-CH 30V 3.1A 3-Pin SOT-23 T/R / MOSFET N-CH 30V 3.6A SOT-23

***enic: 30V 3.6A 1.1W 68m¦¸@4.5V,2.9A 1.5V@250¦ÌA N Channel SOT-23(SOT-23-3) MOSFETs ROHS

*** Stop Electro: Small Signal Field-Effect Transistor, 3.6A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***ark: Mosfet, N Channel, 30V, 3.6A, Sot-23-3, Full Reel; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:3.6A; On Resistance Rds(On):0.055Ohm; Transistor Mounting:surface Mount; No. Of Pins:3Pins Rohs Compliant: No

***et Europe: Transistor MOSFET Array Dual P-CH 20V 4A 8-Pin SOIC

***(Formerly Allied Electronics): MOSFET; Dual P-CH; Vds 20V; Vgs +/- 20V; Rds(on) 48mohm; Id 4A; SO8; Pd 3.1W

***ure Electronics: Dual P-Channel 20 V 0.058 Ohm Surface Mount TrenchFET Power Mosfet - SOIC-8

***enic: 20V 4A 58m´Î@4.5V4.8A 3.1W 1.4V@250Ã×A 2 P-Channel SOIC-8_150mil MOSFETs ROHS

***ark: Mosfet, P Channel, -20V, -4A, Soic-8, Full Reel; Channel Type:dual P Channel; Drain Source Voltage Vds N Channel:-; Drain Source Voltage Vds P Channel:20V; Continuous Drain Current Id N Channel:-; No. Of Pins:8Pins; Product Range:- Rohs Compliant: No

***ure Electronics: P-Channel 20 V 38 mO 9.1 nC SMT Enhancement Mode Mosfet - SOT-23

***ical: Trans MOSFET P-CH 20V 4.3A Automotive 3-Pin SOT-23 T/R

***nell: MOSFET, P-CH, -20V, SOT-23-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -4.3A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.025ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.4V; Power Dissipation Pd: 800mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

Market price

Part #	Mfg.	Description	Stock	Price
BLS6G2731-6G,112 DISTI # 1603-1076-ND	Ampleon	RF FET LDMOS 60V 15DB SOT975C RoHS: Compliant Min Qty: 1 Container: Tray	On Order	120:$78.2040 60:$84.0840 10:$86.4360 1:$91.1400
BLS6G2731-6G112 DISTI # BLS6G2731-6G112	Avnet, Inc.	- Bulk (Alt: BLS6G2731-6G112) Min Qty: 5 Container: Bulk	Americas - 0	50:$67.3900 25:$69.0900 15:$70.7900 10:$72.6900 5:$73.5900
BLS6G2731-6G,112 DISTI # BLS6G2731-6G,112	Ampleon	RF Components - Rail/Tube (Alt: BLS6G2731-6G,112) RoHS: Compliant Min Qty: 60 Container: Tube	Americas - 0
BLS6G2731-6G112	NXP Semiconductors	Now Ampleon, BLS6G2731-6G, LDMOS S-band radar power transistor, SOT975 (CDFM2) RoHS: Not Compliant	8	1000:$73.6800 500:$77.5600 100:$80.7500 25:$84.2100 1:$90.6900

Image	Part #	Description
	Mfr.#: BLS6G2731-120112 OMO.#: OMO-BLS6G2731-120112-1190	New and Original
	Mfr.#: BLS6G2731P-200 OMO.#: OMO-BLS6G2731P-200-1190	New and Original
	Mfr.#: BLS6G2731S-120112 OMO.#: OMO-BLS6G2731S-120112-1190	- Bulk (Alt: BLS6G2731S-120112)
	Mfr.#: BLS6G2735L-30 OMO.#: OMO-BLS6G2735L-30-1190	New and Original
	Mfr.#: BLS6G2735L-30112 OMO.#: OMO-BLS6G2735L-30112-1190	New and Original
	Mfr.#: BLS6G2731-120.112 OMO.#: OMO-BLS6G2731-120-112-1190	New and Original
	Mfr.#: BLS6G2731S-120,112 OMO.#: OMO-BLS6G2731S-120-112-AMPLEON	RF MOSFET Transistors LDMOS TNS
	Mfr.#: BLS6G2731-120,112 OMO.#: OMO-BLS6G2731-120-112-AMPLEON	RF MOSFET Transistors LDMOS TNS
	Mfr.#: BLS6G2735L-30,112 OMO.#: OMO-BLS6G2735L-30-112-AMPLEON	RF MOSFET Transistors 60V 580mOhms
	Mfr.#: BLS6G2735LS-30,112 OMO.#: OMO-BLS6G2735LS-30-112-AMPLEON	RF MOSFET Transistors 60V 580mOhms

BLS6G2731-6G112

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes