NTD5803NT4G

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-252-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

40 V

Id - Continuous Drain Current:

76 A

Rds On - Drain-Source Resistance:

7.2 mOhms

Vgs - Gate-Source Voltage:

20 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

83 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Height:

2.38 mm

Length:

6.73 mm

Series:

NTD5803N

Transistor Type:

1 N-Channel

Width:

6.22 mm

Brand:

ON Semiconductor

Fall Time:

6.6 ns

Product Type:

MOSFET

Rise Time:

21.4 ns

Factory Pack Quantity:

2500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

28.3 ns

Typical Turn-On Delay Time:

12.6 ns

Unit Weight:

0.139332 oz

Tags

NTD580, NTD58, NTD5, NTD