DMT10H015LSS-13

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SO-8

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

100 V

Id - Continuous Drain Current:

8.3 A

Rds On - Drain-Source Resistance:

16 mOhms

Vgs th - Gate-Source Threshold Voltage:

2 V

Vgs - Gate-Source Voltage:

10 V

Qg - Gate Charge:

33.3 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

1.2 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Height:

1.5 mm

Length:

4.95 mm

Series:

DMT10

Transistor Type:

1 N-Channel

Width:

3.95 mm

Brand:

Diodes Incorporated

Fall Time:

8.1 ns

Product Type:

MOSFET

Rise Time:

7 ns

Factory Pack Quantity:

2500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

19.7 ns

Typical Turn-On Delay Time:

6.5 ns

Unit Weight:

0.002610 oz

Tags

DMT10H015L, DMT10H015, DMT10H01, DMT10H0, DMT10, DMT1, DMT