CGHV96050F2

CGHV96050F2
Mfr. #:
CGHV96050F2
Manufacturer:
N/A
Description:
RF JFET Transistors 7.9-9.6GHz 50W GaN Gain 11.dB typ.
Lifecycle:
New from this manufacturer.
Datasheet:
CGHV96050F2 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
CGHV96050F2 more Information
Product Attribute
Attribute Value
Manufacturer
CREE
Product Category
Transistors - FETs, MOSFETs - Single
Packaging
Tray
Mounting-Style
Screw
Operating-Temperature-Range
- 40 C to + 150 C
Package-Case
440210
Technology
GaN SiC
Configuration
Single
Transistor-Type
HEMT
Gain
10 dB
Class
-
Output-Power
50 W
Pd-Power-Dissipation
-
Maximum-Operating-Temperature
+ 150 C
Minimum-Operating-Temperature
- 40 C
Application
-
Operating-Frequency
8.4 GHz to 9.6 GHz
Id-Continuous-Drain-Current
6 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Vgs-th-Gate-Source-Threshold-Voltage
2.3 V
Rds-On-Drain-Source-Resistance
-
Transistor-Polarity
N-Channel
Forward-Transconductance-Min
-
Development-Kit
CGHV96050F2-TB
Vgs-Gate-Source-Breakdown-Voltage
3 V
Gate-Source-Cutoff-Voltage
- 10 V to + 2 V
Maximum-Drain-Gate-Voltage
-
NF-Noise-Figure
-
P1dB-Compression-Point
-
Tags
CGHV960, CGHV9, CGHV, CGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
FET RF 100V 9.6GHZ 440210
GaN HEMTs
Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
X-Band GaN HEMTs & MMICs
Wolfspeed/Cree X-Band GaN HEMTs & MMICs wide bandgap increases the breakdown field by five times and the power density by a factor of 10 to 20 compared with GaAs-based devices. Cree GaN components are smaller and have a lower capacitance for the same operating power. This means that amplifiers can operate over a wider bandwidth while exhibiting good input and output matching. X-band power amplifiers are moving away from inefficient GaAs pHEMTs and unreliable Traveling Wave Tubes due to the significant advantages of GaN HEMTs and MMICs.Learn More
Part # Mfg. Description Stock Price
CGHV96050F2
DISTI # CGHV96050F2-ND
WolfspeedRF MOSFET HEMT 40V 440210
RoHS: Compliant
Min Qty: 1
Container: Tray
98In Stock
  • 1:$458.6800
CGHV96050F2-TB
DISTI # CGHV96050F2-TB-ND
WolfspeedTEST FIXTURE FOR CGHV96050F2
RoHS: Compliant
Min Qty: 1
Container: Bulk
3In Stock
  • 1:$550.0000
CGHV96050F2
DISTI # 941-CGHV96050F2
Cree, Inc.RF JFET Transistors GaN HEMT 7.9-9.6GHz, 50 Watt
RoHS: Compliant
5
  • 1:$458.6800
CGHV96050F2-TB
DISTI # 941-CGHV96050F2-TB
Cree, Inc.RF Development Tools Test Board without GaN HEMT
RoHS: Not compliant
2
  • 1:$550.0000
CGHV96050F2-TB
DISTI # CGHV96050F2-TB
WolfspeedRF TRANSISTOR TEST FIXTURE
RoHS: Compliant
2
  • 2:$550.0000
Image Part # Description
CGHV96100F2

Mfr.#: CGHV96100F2

OMO.#: OMO-CGHV96100F2

RF JFET Transistors GaN HEMT 7.9-9.6GHz, 100 Watt
CGHV96050F1

Mfr.#: CGHV96050F1

OMO.#: OMO-CGHV96050F1

RF JFET Transistors GaN HEMT 7.9-9.6GHz, 50 Watt
CGHV96050F2

Mfr.#: CGHV96050F2

OMO.#: OMO-CGHV96050F2

RF JFET Transistors GaN HEMT 7.9-9.6GHz, 50 Watt
CGHV96050F1-TB

Mfr.#: CGHV96050F1-TB

OMO.#: OMO-CGHV96050F1-TB

RF Development Tools Test Board without GaN HEMT
CGHV96100F2-TB

Mfr.#: CGHV96100F2-TB

OMO.#: OMO-CGHV96100F2-TB

RF Development Tools Test Board without GaN HEMT
CGHV96050F1-TB

Mfr.#: CGHV96050F1-TB

OMO.#: OMO-CGHV96050F1-TB-WOLFSPEED

BOARD TEST FIXTURE FOR CGHV96050
CGHV96100F2-TB

Mfr.#: CGHV96100F2-TB

OMO.#: OMO-CGHV96100F2-TB-WOLFSPEED

TEST FIXTURE FOR CGHV96100F2
CGHV96100F2

Mfr.#: CGHV96100F2

OMO.#: OMO-CGHV96100F2-WOLFSPEED

RF JFET Transistors 7.9-9.6GHz 100W GaN Gain 12.4dB 50OHM
CGHV96050F2

Mfr.#: CGHV96050F2

OMO.#: OMO-CGHV96050F2-WOLFSPEED

RF JFET Transistors 7.9-9.6GHz 50W GaN Gain 11.dB typ.
CGHV96050F1

Mfr.#: CGHV96050F1

OMO.#: OMO-CGHV96050F1-WOLFSPEED

RF JFET Transistors 7.9-9.6GHz 50W 50ohm Gain 15.6dB GaN HEMT
Availability
Stock:
Available
On Order:
2500
Enter Quantity:
Current price of CGHV96050F2 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$688.02
$688.02
10
$653.62
$6 536.19
100
$619.22
$61 921.80
500
$584.82
$292 408.50
1000
$550.42
$550 416.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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