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QPD1009

QPD1009
Mfr. #:
QPD1009
Manufacturer:
Qorvo
Description:
RF JFET Transistors DC-4GHz 15W 28-50V SSG 24dB PAE 72% GaN
Lifecycle:
New from this manufacturer.
Datasheet:
QPD1009 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
QPD1009 more Information
Product Attribute
Attribute Value
Manufacturer:
Qorvo
Product Category:
RF JFET Transistors
RoHS:
Y
Transistor Type:
HEMT
Technology:
GaN SiC
Gain:
24 dB
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
50 V
Vgs - Gate-Source Breakdown Voltage:
145 V
Id - Continuous Drain Current:
700 mA
Output Power:
17 W
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 85 C
Pd - Power Dissipation:
17.5 W
Mounting Style:
SMD/SMT
Package / Case:
QFN-16
Packaging:
Tray
Configuration:
Single
Operating Frequency:
4 GHz
Operating Temperature Range:
- 40 C to + 85 C
Series:
QPD
Brand:
Qorvo
Development Kit:
QPD1009-EVB1
Moisture Sensitive:
Yes
Product Type:
RF JFET Transistors
Factory Pack Quantity:
50
Subcategory:
Transistors
Vgs th - Gate-Source Threshold Voltage:
- 2.8 V
Part # Aliases:
1132865
Tags
QPD100, QPD10, QPD1, QPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC- 4.0 GHz, 15 W, 50 V, 3 x 3 mm, GaN
QPD1009 & QPD1010 GaN RF Transistors
Qorvo QPD1009 & QPD1010 GaN RF Transistors are discrete GaN on SiC HEMTs which operate from DC to 4GHz and constructed with Qorvo's proven QGaN25HV process. This process features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization potentially lowers system cost in terms of fewer amplifier line-ups and lower thermal management costs.
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
GaN Transistor Solutions for Sub 6GHz 5G
Qorvo GaN Transistor Solutions for Sub 6GHz 5G are a broad portfolio of gallium nitride (GaN) discrete transistor products. The devices have varying levels of power, voltage, and frequency ratings in die-level and packaged solutions. These products provide high GaN performance plus the convenience of industry-standard packaging. This speeds design, manufacturing, and is backed by industry-leading reliability.
Part # Mfg. Description Stock Price
QPD1009
DISTI # 772-QPD1009		QorvoRF JFET Transistors DC-4GHz 15W 28-50V SSG 24dB PAE 72% GaN
RoHS: Compliant		171
  • 1:$31.0000
  • 25:$26.8100
  • 100:$23.1900
  • 250:$21.5700
QPD1009-EVB1
DISTI # 772-QPD1009-EVB1		QorvoRF Development Tools DC-4GHz 15W 28-50V Eval Board
RoHS: Compliant		3
  • 1:$875.0000
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Availability
Stock:
Available
On Order:
4000
Enter Quantity:
Current price of QPD1009 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$31.00
$31.00
25
$26.81
$670.25
100
$23.19
$2 319.00
250
$21.57
$5 392.50
500
$20.06
$10 030.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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