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IRLR8729PBF

IRLR8729PBF
Mfr. #:
IRLR8729PBF
Manufacturer:
Infineon / IR
Description:
MOSFET 30V 1 N-CH HEXFET 8.9mOhms 10nC
Lifecycle:
New from this manufacturer.
Datasheet:
IRLR8729PBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRLR8729PBF DatasheetIRLR8729PBF Datasheet (P4-P6)IRLR8729PBF Datasheet (P7-P9)IRLR8729PBF Datasheet (P10-P11)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-252-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
58 A
Rds On - Drain-Source Resistance:
11.9 mOhms
Vgs th - Gate-Source Threshold Voltage:
2.35 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
10 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
55 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Height:
2.3 mm
Length:
6.5 mm
Transistor Type:
1 N-Channel
Type:
HEXFET Power MOSFET
Width:
6.22 mm
Brand:
Infineon / IR
Forward Transconductance - Min:
91 S
Fall Time:
10 ns
Product Type:
MOSFET
Rise Time:
47 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
11 ns
Typical Turn-On Delay Time:
10 ns
Part # Aliases:
SP001574172
Unit Weight:
0.139332 oz
Tags
IRLR8729, IRLR872, IRLR87, IRLR8, IRLR, IRL
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
***ied Electronics & Automation
MOSFET, 30V, 58A, 8.9 MOHM, 10 NC QG, LOGIC LEVEL, D-PAK
***ineon
Benefits: Very Low RDS(on) at 4.5V VGS; Ultra-Low Gate Impedance; Fully Characterized Avalanche Voltage and Current; Lead-Free; RoHS compliant
***nell
MOSFET, N-CH 30V 58A DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:58A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.006ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:55W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:58A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Termination Type:Surface Mount Device; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V
Part # Mfg. Description Stock Price
IRLR8729PBF
DISTI # IRLR8729PBF-ND		Infineon Technologies AGMOSFET N-CH 30V 58A D-PAK
RoHS: Compliant
Min Qty: 1
Container: Tube		Limited Supply - Call
    IRLR8729PBF
    DISTI # 942-IRLR8729PBF    		Infineon Technologies AGMOSFET 30V 1 N-CH HEXFET 8.9mOhms 10nC
    RoHS: Compliant    		107
    • 1:$0.8300
    • 10:$0.6910
    • 100:$0.4460
    • 1000:$0.3570
    • 2000:$0.3010
    • 5000:$0.2900
    • 10000:$0.2890
    IRLR8729PBFInfineon Technologies AGPower Field-Effect Transistor, 50A I(D), 30V, 0.0089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
    RoHS: Compliant    		362
    • 1000:$0.2400
    • 500:$0.2500
    • 100:$0.2600
    • 25:$0.2700
    • 1:$0.2900
    IRLR8729PBFInternational RectifierPower Field-Effect Transistor, 50A I(D), 30V, 0.0089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
    RoHS: Compliant    		4140
    • 1000:$0.2400
    • 500:$0.2500
    • 100:$0.2600
    • 25:$0.2700
    • 1:$0.2900
    IRLR8729TRPBF
    DISTI # IRLR8729PBF-GURT    		Infineon Technologies AGN-LogL 30V 58A 55W 0,0089R TO252AA
    RoHS: Compliant    		0
    • 50:€0.2140
    • 100:€0.1740
    • 500:€0.1540
    • 3000:€0.1485
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    Availability
    Stock:
    90
    On Order:
    2073
    Enter Quantity:
    Current price of IRLR8729PBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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