2N3734

Product Attribute

Attribute Value

Manufacturer:

Central Semiconductor

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-39-3

Transistor Polarity:

NPN

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

30 V

Collector- Base Voltage VCBO:

50 V

Emitter- Base Voltage VEBO:

5 V

Collector-Emitter Saturation Voltage:

200 mV

Maximum DC Collector Current:

1.5 A

Gain Bandwidth Product fT:

250 MHz

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 200 C

Series:

2N3734

DC Current Gain hFE Max:

120 at 1 A, 1.5 V

Packaging:

Bulk

Brand:

Central Semiconductor

DC Collector/Base Gain hfe Min:

30 at 1 A, 1.5 V

Pd - Power Dissipation:

1 W

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

500

Subcategory:

Transistors

Part # Aliases:

2N3734 PBFREE

Tags

2N373, 2N37, 2N3