2SK2838(Q)

Mfr. #:: 2SK2838(Q)
Manufacturer:: Toshiba America Electronic Components
Description:: Trans MOSFET N-CH Si 400V 5.5A 3-Pin(3+Tab) TO-220
Lifecycle:: New from this manufacturer.
Datasheet:: 2SK2838(Q) Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Tags: 2SK283, 2SK28, 2SK2, 2SK

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

2SK2838(Q) Description

***p One Stop Global: Trans MOSFET N-CH Si 400V 5.5A 3-Pin(3+Tab) TO-220

***icroelectronics: N-Channel 400V - 0.85 Ohm - 5.4A TO-220 Zener-Protected SuperMESH(TM) POWER MOSFET

***va Crawler: N-channel 400 V, 0.85 Ohm typ., 5.4 A SuperMESH POWER Mosfet in TO-220 package

***ical: Trans MOSFET N-CH 400V 5.4A 3-Pin(3+Tab) TO-220AB Tube

***eco: MOSFET N-Channel 400V 5.4A (Tc) 70W (Tc) Through Hole TO-220AB

***ark: N CHANNEL MOSFET, 400V, 5.4A TO-220; Channel Type:N Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:5.4A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:- RoHS Compliant: Yes

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 5.4A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ponent Stockers USA: 4 A 400 V 1.8 ohm N-CHANNEL Si POWER MOSFET TO-220AB

***r Electronics: Power Field-Effect Transistor, 4A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET, N TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 4A; Drain Source Voltage Vds: 400V; On Resistance Rds(on): 1.3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 7

***ical: Trans MOSFET N-CH 500V 7.1A 3-Pin(3+Tab) TO-220 Tube

***ineon: CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power

***nell: MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 7.1A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.47ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation

***icroelectronics: N-channel 500 V, 0.53 Ohm, 7 A TO-220 MDmesh(TM) II Power MOSFET

***r Electronics: Power Field-Effect Transistor, 7A I(D), 500V, 0.63ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET, N CH, 500V, 7A, TO220; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.53ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 70W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)

***emi: N-Channel Power MOSFET, UniFETTM, 400V, 26A, 160mΩ, TO-220

***et Europe: Trans MOSFET N-CH 400V 26A 3-Pin(3+Tab) TO-220AB Rail

***ure Electronics: N-Channel 400 V 160 mOhm Flange Mount Mosfet - TO-220

***r Electronics: Power Field-Effect Transistor, 26A I(D), 400V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET, N CH, 400V, 26A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:26A; Drain Source Voltage Vds:400V; On Resistance Rds(on):0.13ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:265W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)

***rchild Semiconductor: UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

***ark: MOSFET, N CH, 400V, 0.24OHM, 15A, TO-220-3; Transistor Polarity:N Channel; Conti

***emi: N-Channel Power MOSFET, UniFETTM, 400V, 15A, 300mΩ, TO-220

***Yang: Trans MOSFET N-CH 400V 15A 3-Pin(3+Tab) TO-220AB - Rail/Tube

***r Electronics: Power Field-Effect Transistor, 15A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET, N CH, 400V, 15A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:400V; On Resistance Rds(on):0.24ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:170W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)

***rchild Semiconductor: UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Market price

Part #	Mfg.	Description	Stock	Price
2SK2838(Q)	Toshiba America Electronic Components		72	36:$1.8920 11:$2.1500 1:$3.4400

Image	Part #	Description
	Mfr.#: 2SK2839(TE16L) OMO.#: OMO-2SK2839-TE16L--1190	N/A (ship within 1day)
	Mfr.#: 2SK2806 OMO.#: OMO-2SK2806-1190	New and Original
	Mfr.#: 2SK2806-01,2SK2806,K2806 OMO.#: OMO-2SK2806-01-2SK2806-K2806-1190	New and Original
	Mfr.#: 2SK2824 OMO.#: OMO-2SK2824-1190	New and Original
	Mfr.#: 2SK2835 OMO.#: OMO-2SK2835-1190	New and Original
	Mfr.#: 2SK2862 Q OMO.#: OMO-2SK2862-Q-1190	New and Original
	Mfr.#: 2SK2866 OMO.#: OMO-2SK2866-1190	POWER FIELD-EFFECT TRANSISTOR, 10A I(D), 600V, 0.75OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB
	Mfr.#: 2SK2876,K2876 OMO.#: OMO-2SK2876-K2876-1190	New and Original
	Mfr.#: 2SK2876-01MR,K2876,2SK28 OMO.#: OMO-2SK2876-01MR-K2876-2SK28-1190	New and Original
	Mfr.#: 2SK2883(TE24L,Q)-ND OMO.#: OMO-2SK2883-TE24L-Q--ND-1190	New and Original

2SK2838(Q)

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes