NGTB40N120LWG

NGTB40N120LWG
Mfr. #:
NGTB40N120LWG
Manufacturer:
ON Semiconductor
Description:
IGBT Transistors 1200V/40A FS1 IGBT
Lifecycle:
New from this manufacturer.
Datasheet:
NGTB40N120LWG Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NGTB40N120LWG DatasheetNGTB40N120LWG Datasheet (P4-P6)NGTB40N120LWG Datasheet (P7-P9)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Package / Case:
TO-247
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
1200 V
Collector-Emitter Saturation Voltage:
1.9 V
Maximum Gate Emitter Voltage:
20 V
Continuous Collector Current at 25 C:
80 A
Pd - Power Dissipation:
260 W
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Series:
NGTB40N120L
Packaging:
Tube
Brand:
ON Semiconductor
Gate-Emitter Leakage Current:
200 nA
Product Type:
IGBT Transistors
Factory Pack Quantity:
30
Subcategory:
IGBTs
Unit Weight:
0.229281 oz
Tags
NGTB40N12, NGTB40N1, NGTB40, NGTB4, NGTB, NGT
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 1200V 80A 260000mW 3-Pin(3+Tab) TO-247 Tube
***ark
Igbt Single Transistor, 80 A, 1.9 V, 260 W, 1.2 Kv, To-247, 3
***ied Electronics & Automation
NGTB40N120LWG; IGBT Transistor; 80 A 1200 V; 3-Pin TO-247
***p One Stop Global
Trans IGBT Chip N-CH 1.2KV 80A 3-Pin(3+Tab) TO-247 Rail
***Semiconductor
IGBT 1200V 40A FS1 Gen Mkt
***Components
IGBT 1200V 40A TO247
***ment14 APAC
Prices include import duty and tax. IGBT, 1200V, 40A, TO-247-3; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.9V; Power Dissipation Pd:260W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-55°C; Transistor Type:IGBT
***nell
IGBT, 1200V, 40A, TO-247-3; Corrente di Collettore CC:80A; Tensione Saturaz Collettore-Emettitore Vce(on):1.9V; Dissipazione di Potenza Pd:260W; Tensione Collettore-Emettitore V(br)ceo:1.2kV; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Temperatura di Esercizio Min:-55°C; Tipo di Transistor:IGBT
Part # Mfg. Description Stock Price
NGTB40N120LWG
DISTI # NGTB40N120LWG-ND
ON SemiconductorIGBT 1200V 40A TO247
RoHS: Compliant
Min Qty: 90
Container: Tube
Limited Supply - Call
    NGTB40N120LWG
    DISTI # NGTB40N120LWG
    ON SemiconductorTrans IGBT Chip N-CH 1.2KV 80A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: NGTB40N120LWG)
    Min Qty: 93
    Container: Bulk
    Americas - 0
    • 930:$3.2900
    • 279:$3.3900
    • 465:$3.3900
    • 93:$3.4900
    • 186:$3.4900
    NGTB40N120LWG
    DISTI # 70341226
    ON SemiconductorNGTB40N120LWG,IGBT Transistor,80 A 1200 V,3-Pin TO-247
    RoHS: Compliant
    0
    • 10:$4.8200
    • 50:$4.5900
    • 100:$4.3600
    • 250:$4.1400
    NGTB40N120LWGON SemiconductorInsulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel
    RoHS: Compliant
    2626
    • 1000:$3.5500
    • 500:$3.7400
    • 100:$3.8900
    • 25:$4.0600
    • 1:$4.3700
    NGTB40N120LWG
    DISTI # 2321665
    ON SemiconductorIGBT, 1200V, 40A, TO-247-3
    RoHS: Compliant
    0
    • 2500:$4.8800
    • 1000:$5.1000
    • 500:$5.4200
    • 250:$6.0000
    • 100:$6.8300
    • 25:$7.5900
    • 10:$8.7600
    • 1:$10.0500
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    OMO.#: OMO-MGJ2D051509SC-MURATA-POWER-SOLUTIONS

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    Availability
    Stock:
    Available
    On Order:
    3000
    Enter Quantity:
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