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TK10A80W,S4X

TK10A80W,S4X
Mfr. #:
TK10A80W,S4X
Manufacturer:
Toshiba
Description:
MOSFET N-Ch 800V 1150pF 19nC 9.5A 40W
Lifecycle:
New from this manufacturer.
Datasheet:
TK10A80W,S4X Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
TK10A80W,S4X DatasheetTK10A80W,S4X Datasheet (P4-P6)TK10A80W,S4X Datasheet (P7-P9)TK10A80W,S4X Datasheet (P10)
ECAD Model:
More Information:
TK10A80W,S4X more Information
Product Attribute
Attribute Value
Manufacturer:
Toshiba
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220SIS-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
800 V
Id - Continuous Drain Current:
9.5 A
Rds On - Drain-Source Resistance:
460 mOhms
Vgs th - Gate-Source Threshold Voltage:
3 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
19 nC
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
40 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
DTMOSIV
Series:
TK10A80W
Transistor Type:
1 N-Channel
Brand:
Toshiba
Fall Time:
10 ns
Product Type:
MOSFET
Rise Time:
35 ns
Factory Pack Quantity:
50
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
120 ns
Typical Turn-On Delay Time:
65 ns
Unit Weight:
0.068784 oz
Tags
TK10A80W, TK10A8, TK10A, TK10, TK1
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH Si 800V 9.5A 3-Pin(3+Tab) TO-220SIS Tube
***i-Key
MOSFET N-CH 800V 9.5A TO220SIS
***
PWR MSFT TRANS TO-220SIS
Gen-4 Super Junction DTMOS MOSFETs
Toshiba Gen-4 Super-Junction DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, DTMOSIV which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. With a reduction in the RDS(on) it makes it possible to house lower RDS(on) chips in the same packages. This helps to improve the efficiency and reduce the size of power supplies. These devices are ideal for use with switching regulators.
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Availability
Stock:
160
On Order:
2143
Enter Quantity:
Current price of TK10A80W,S4X is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$2.86
$2.86
10
$2.30
$23.00
100
$2.10
$210.00
250
$1.89
$472.50
500
$1.70
$850.00
1000
$1.43
$1 430.00
2500
$1.36
$3 400.00
5000
$1.31
$6 550.00
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