2N5551ZL1G

2N5551ZL1G
Mfr. #:
2N5551ZL1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 600mA 180V NPN
Lifecycle:
New from this manufacturer.
Datasheet:
2N5551ZL1G Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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HTML Datasheet:
2N5551ZL1G Datasheet2N5551ZL1G Datasheet (P4-P6)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
Bipolar Transistors - BJT
RoHS:
Y
Mounting Style:
Through Hole
Package / Case:
TO-92-3
Transistor Polarity:
NPN
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
160 V
Collector- Base Voltage VCBO:
180 V
Emitter- Base Voltage VEBO:
6 V
Collector-Emitter Saturation Voltage:
0.25 V
Maximum DC Collector Current:
0.6 A
Gain Bandwidth Product fT:
300 MHz
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Series:
2N5551
Height:
5.33 mm
Length:
5.2 mm
Packaging:
Ammo Pack
Width:
4.19 mm
Brand:
ON Semiconductor
Continuous Collector Current:
0.6 A
DC Collector/Base Gain hfe Min:
80
Pd - Power Dissipation:
625 mW
Product Type:
BJTs - Bipolar Transistors
Factory Pack Quantity:
2000
Subcategory:
Transistors
Tags
2N5551Z, 2N5551, 2N555, 2N55, 2N5
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
Small Signal NPN Bipolar Transistor
***et Europe
Trans GP BJT NPN 160V 0.6A 3-Pin TO-92 Tape and Ammo
***i-Key
TRANS NPN 160V 0.6A TO-92
***ark
BIPOLAR TRANSISTOR, NPN, 160V TO-92; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:160V; Transition Frequency Typ, ft:100MHz; Power Dissipation, Pd:625mW; DC Collector Current:600mA; DC Current Gain Max (hfe):80 ;RoHS Compliant: Yes
Part # Mfg. Description Stock Price
2N5551ZL1G
DISTI # 2N5551ZL1G-ND
ON SemiconductorTRANS NPN 160V 0.6A TO-92
RoHS: Compliant
Min Qty: 6000
Container: Tape & Box (TB)
Limited Supply - Call
    2N5551ZL1G
    DISTI # 2N5551ZL1G
    ON SemiconductorTrans GP BJT NPN 160V 0.6A 3-Pin TO-92 Tape and Ammo - Bulk (Alt: 2N5551ZL1G)
    RoHS: Compliant
    Min Qty: 4167
    Container: Bulk
    Americas - 0
    • 41670:$0.0739
    • 20835:$0.0749
    • 12501:$0.0759
    • 8334:$0.0769
    • 4167:$0.0779
    2N5551ZL1G
    DISTI # 863-2N5551ZL1G
    ON SemiconductorBipolar Transistors - BJT 600mA 180V NPN
    RoHS: Compliant
    0
      2N5551ZL1GON SemiconductorSmall Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
      RoHS: Compliant
      40000
      • 500:$0.0800
      • 1000:$0.0800
      • 25:$0.0900
      • 100:$0.0900
      • 1:$0.1000
      Image Part # Description
      2N5550RLRP

      Mfr.#: 2N5550RLRP

      OMO.#: OMO-2N5550RLRP

      Bipolar Transistors - BJT 600mA 160V NPN
      2N5551-BU

      Mfr.#: 2N5551-BU

      OMO.#: OMO-2N5551-BU-1190

      New and Original
      2N5551G-B  SOT-89

      Mfr.#: 2N5551G-B SOT-89

      OMO.#: OMO-2N5551G-B-SOT-89-1190

      New and Original
      2N5551RLG

      Mfr.#: 2N5551RLG

      OMO.#: OMO-2N5551RLG-1190

      New and Original
      2N5551TAP

      Mfr.#: 2N5551TAP

      OMO.#: OMO-2N5551TAP-1190

      New and Original
      2N5551Y

      Mfr.#: 2N5551Y

      OMO.#: OMO-2N5551Y-1190

      New and Original
      2N5551Y-F

      Mfr.#: 2N5551Y-F

      OMO.#: OMO-2N5551Y-F-1190

      New and Original
      2N5551YBO

      Mfr.#: 2N5551YBO

      OMO.#: OMO-2N5551YBO-1190

      New and Original
      2N5551RLRPG

      Mfr.#: 2N5551RLRPG

      OMO.#: OMO-2N5551RLRPG-ON-SEMICONDUCTOR

      Bipolar Transistors - BJT 600mA 180V NPN
      2N5551 D26Z

      Mfr.#: 2N5551 D26Z

      OMO.#: OMO-2N5551-D26Z-1190

      New and Original
      Availability
      Stock:
      Available
      On Order:
      4000
      Enter Quantity:
      Current price of 2N5551ZL1G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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