S25FL512SAG-AEC13

Mfr. #:: S25FL512SAG-AEC13
Manufacturer:: Cypress Semiconductor
Description:: NOR Flash
Lifecycle:: New from this manufacturer.
Datasheet:: S25FL512SAG-AEC13 Datasheet
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More Information:: S25FL512SAG-AEC13 more Information S25FL512SAG-AEC13 Product Details

Product Attribute
Attribute Value

Manufacturer:: Cypress Semiconductor

Product Category:: NOR Flash

Series:: S25FL512S

Packaging:: Reel

Brand:: Cypress Semiconductor

Product Type:: NOR Flash

Factory Pack Quantity:: 2500

Subcategory:: Memory & Data Storage

Tradename:: MirrorBit

Tags: S25FL512SAG-A, S25FL512SAG, S25FL512SA, S25FL512S, S25FL5, S25FL, S25F, S25

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S25FL512SAG-AEC13 More Information

S25FL512S FL-S NOR Flash Memory Devices: Cypress S25FL512S FL-S NOR Flash Memory Devices are VIO VCC 2.7V to 3.6V flash non-volatile memory devices. These devices use 65nm MirrorBit technology. Designed using Eclipse™ architecture with a 512-byte page programming buffer. The 512-Mb S25FL512S FL-S NOR allows users to program up to 256 words (512 bytes) in one operation. This results in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via an SPI and supports traditional SPI single bit serial input and output. Optional two bit (Dual I/O or DIO), and four bit (Quad I/O or QIO) serial commands. The S25FL512S FL-S NOR provides support for Double Data Rate read commands for SIO, DIO, and QIO that transfer address. The S25FL512S FL-S transfer address and read data on both edges of the clock. By using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands, the read transfer rate instruction can match traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FL512S FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. The S25FL512S FL-S NOR is ideal for code shadowing, XIP, and data storage.

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	Mfr.#: S25FL512SAGMFVG10 OMO.#: OMO-S25FL512SAGMFVG10-CYPRESS-SEMICONDUCTOR	Flash Memory 512 MBIT (64 MBYTE) MIRRORBIT FLASH NON-VOLATILE MEMORY; CMOS 3.0 VOLT CORE WITH VERSATILE I/O; SERIAL PERIPHERAL INTERFACE WITH MULTI-I/O; SOIC16 PACKAGE WITH RESET# ENABLED; 105C
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S25FL512SAG-AEC13

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