NTMD4184PFR2G

Mfr. #:: NTMD4184PFR2G
Manufacturer:: ON Semiconductor
Description:: MOSFET PFET FTKY S08 30V TR 3.8A
Lifecycle:: New from this manufacturer.
Datasheet:: NTMD4184PFR2G Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: NTMD4184PFR2G Datasheet NTMD4184PFR2G Datasheet (P4-P6)NTMD4184PFR2G Datasheet (P7)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: SOIC-8

Number of Channels:: 1 Channel

Transistor Polarity:: P-Channel

Vds - Drain-Source Breakdown Voltage:: 30 V

Id - Continuous Drain Current:: 4 A

Rds On - Drain-Source Resistance:: 95 mOhms

Vgs - Gate-Source Voltage:: 20 V

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 2.31 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Reel

Height:: 1.5 mm

Length:: 5 mm

Series:: NTMD4184PF

Transistor Type:: 1 P-Channel

Width:: 4 mm

Brand:: ON Semiconductor

Fall Time:: 2.8 ns

Product Type:: MOSFET

Rise Time:: 12 ns

Factory Pack Quantity:: 2500

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 18 ns

Typical Turn-On Delay Time:: 7.2 ns

Unit Weight:: 0.006596 oz

Tags: NTMD4184PF, NTMD41, NTMD4, NTMD, NTM

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NTMD4184PFR2G Description

***ure Electronics: Single P-Channel 30 V 165 mOhm 4.2 nC 2.31 W Silicon SMT Mosfet - SOIC-8

***emi: Dual P-Channel FETKY™ Power MOSFET -30V -4.0A 95mΩ

***nell: MOSFET, P-CH, 30V, 3.3A, 150DEG C, 1.6W; Available until stocks are exhausted

***(Formerly Allied Electronics): MOSFET, Power; P-Ch; VDSS -30V; RDS(ON) 0.07Ohm; ID -4.6A; SO-8; PD 2.5W; VGS +/-20V

*** Source Electronics: Trans MOSFET P-CH Si 30V 4.6A 8-Pin SOIC N T/R / MOSFET P-CH 30V 4.6A 8-SOIC

***eco: Transistor MOSFET P Channel 30 Volt 4.6 Amp 8 Pin SOIC

***ure Electronics: Single P-Channel 30 V 0.13 Ohm 40 nC HEXFET® Power Mosfet - SOIC-8

***ter Electronics: MOSFET, P-CHANNEL, -30V, -4.6A, 70 MOHM, 27 NC QG, SO-8

***ineon SCT: -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET

***ark: P CHANNEL MOSFET, -30V, 4.6A, SOIC; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:4.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***p One Stop Global: Trans MOSFET N/P-CH 30V 3.7A/2.9A 8-Pin SOIC N T/R

***emi: Dual N & P-Channel Enhancement Mode Field Effect Transistor 30V

***r Electronics: Power Field-Effect Transistor, 3.7A I(D), 30V, 0.08ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:3.7A; On Resistance, Rds(on):80mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

***nell: MOSFET N & P CH 30V 3.7/-2.9A 8SOIC; Transistor Type:MOSFET; Transistor Polarity:N/P ; Voltage, Vds Typ:30V; Current, Id Cont:3.7A; On State Resistance:80mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.7V; Case Style:SOIC; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C

***rchild Semiconductor: These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

***p One Stop: Trans MOSFET N/P-CH 30V 6.8A/4.6A 8-Pin SOIC N T/R

***ure Electronics: Dual N/P-Channel 30 V 27/64 mOhm 6.8/8.1 nC HEXFET® Power Mosfet - SOIC-8

***ark: MOSFET, 30V, N+P, 27 m and -64 m , 6.8A and -4.6A, SO-8, TAPE & REEL

***ineon SCT: 30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***ineon: Benefits: RoHS Compliant; Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; Dual N and P-Channel MOSFET

***nell: MOSFET, DUAL N & P-CH, 30V, 6.8A, SOIC-8; Transistor Polarity: Dual N and P Channel; Continuous Drain Current Id: 6.8A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.022ohm; Rds(on) Test Voltage Vgs: 10V; Threshold

***emi: Power MOSFET and Schottky Diode, 30 V, 5.7 A, Single N-Channel

***th Star Micro: NTMD4884NF: Small Signal MOSFET 30V 5.7A 70 mOhm Dual N-Channel SO-8 FETKY

***ark: N Channel Mosfet, 30V, 5.7A, Soic, Full Reel

***r Electronics: Small Signal Field-Effect Transistor, 3.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ure Electronics: Dual N-Channel 30 V 0.04 Ohm 2.3 W Surface Mount Power Mosfet - SOIC-8

***et Europe: Transistor MOSFET Array Dual N-CH 30V 5.8A 8-Pin SOIC T/R

***enic: 30V 5.8A 40m´Î@10V5A 2.3W 3V@250Ã×A 2 N-Channel SOIC-8_150mil MOSFETs ROHS

***ark: Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5.8A; On Resistance Rds(on):0.033ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: No

***ment14 APAC: MOSFET, NN-CH, 30V, 5.8A, SO8; Transistor Polarity:Dual N Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:2.3W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:5.8A; Drain Source Voltage Vds:30V; Module Configuration:Dual; On Resistance Rds(on):33mohm; Power Dissipation Pd:2.3W; Voltage Vgs Max:20V

***(Formerly Allied Electronics): MOSFET, Power;Dual P-Ch;VDSS -30V;RDS(ON) 0.1Ohm;ID -3.6A;SO-8;PD 2W;VGS +/-20V

***et Europe: Transistor MOSFET Array Dual P-CH 30V 3.6A 8-Pin SOIC T/R

***ure Electronics: Dual P-Channel 30 V 100 mOhm 25 nC HEXFET® Power Mosfet - SOIC-8

*** Stop Electro: Power Field-Effect Transistor, 3.6A I(D), 30V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***nell: MOSFET, DUAL, PP, LOGIC, SO-8; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: 3A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.1ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1V; Po

***ark: Channel Type:dual P Channel; Drain Source Voltage Vds N Channel:-; Drain Source Voltage Vds P Channel:30V; Continuous Drain Current Id N Channel:-; Continuous Drain Current Id P Channel:3.6A; No. Of Pins:8Pins; Product Range:- Rohs Compliant: Yes

Market price

Part #	Mfg.	Description	Stock	Price
NTMD4184PFR2G DISTI # V36:1790_07296438	ON Semiconductor	Trans MOSFET P-CH 30V 4A 8-Pin SOIC N T/R RoHS: Compliant	0	2500000:$0.1697 1250000:$0.1699 250000:$0.1893 25000:$0.2224 2500:$0.2279
NTMD4184PFR2G DISTI # V72:2272_07296438	ON Semiconductor	Trans MOSFET P-CH 30V 4A 8-Pin SOIC N T/R RoHS: Compliant	0
NTMD4184PFR2G DISTI # NTMD4184PFR2GOSCT-ND	ON Semiconductor	MOSFET P-CH 30V 2.3A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	484In Stock	1000:$0.2574 500:$0.3331 100:$0.4239 10:$0.5680 1:$0.6600
NTMD4184PFR2G DISTI # NTMD4184PFR2GOSDKR-ND	ON Semiconductor	MOSFET P-CH 30V 2.3A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	484In Stock	1000:$0.2574 500:$0.3331 100:$0.4239 10:$0.5680 1:$0.6600
NTMD4184PFR2G DISTI # NTMD4184PFR2GOSTR-ND	ON Semiconductor	MOSFET P-CH 30V 2.3A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	On Order	25000:$0.1882 12500:$0.1984 5000:$0.2132 2500:$0.2278
NTMD4184PFR2G DISTI # NTMD4184PFR2G	ON Semiconductor	Trans MOSFET P-CH 30V 4A 8-Pin SOIC N T/R (Alt: NTMD4184PFR2G) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 2500	25000:€0.1769 15000:€0.1899 10000:€0.2059 5000:€0.2249 2500:€0.2749
NTMD4184PFR2G DISTI # NTMD4184PFR2G	ON Semiconductor	Trans MOSFET P-CH 30V 4A 8-Pin SOIC N T/R (Alt: NTMD4184PFR2G) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0	125000:$0.2295 62500:$0.2333 25000:$0.2414 12500:$0.2500 7500:$0.2593 5000:$0.2692 2500:$0.2800
NTMD4184PFR2G DISTI # NTMD4184PFR2G	ON Semiconductor	Trans MOSFET P-CH 30V 4A 8-Pin SOIC N T/R - Tape and Reel (Alt: NTMD4184PFR2G) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.1719 15000:$0.1769 10000:$0.1789 5000:$0.1809 2500:$0.1829
NTMD4184PFR2G. DISTI # 29AC9058	ON Semiconductor	Continuous Drain Current Id:4A,Drain Source Voltage Vds:30V,Operating Temperature Max:150°C,Product Range:-,Automotive Qualification Standard:-,MSL:- RoHS Compliant: Yes	0	25000:$0.1720 15000:$0.1770 10000:$0.1790 5000:$0.1810 1:$0.1830
NTMD4184PFR2G DISTI # 863-NTMD4184PFR2G	ON Semiconductor	MOSFET PFET FTKY S08 30V TR 3.8A RoHS: Compliant	2048	1:$0.6100 10:$0.5060 100:$0.3090 1000:$0.2390 2500:$0.2030 10000:$0.1900 25000:$0.1800

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NTMD4184PFR2G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes