IRL3103PBF

Mfr. #:: IRL3103PBF
Manufacturer:: Infineon / IR
Description:: MOSFET MOSFT 30V 56A 12mOhm 22nC LogLvlAB
Lifecycle:: New from this manufacturer.
Datasheet:: IRL3103PBF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: IRL3103PBF Datasheet IRL3103PBF Datasheet (P4-P6)IRL3103PBF Datasheet (P7-P9)
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More Information:: IRL3103PBF more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-220-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 30 V

Id - Continuous Drain Current:: 56 A

Rds On - Drain-Source Resistance:: 16 mOhms

Vgs - Gate-Source Voltage:: 16 V

Qg - Gate Charge:: 22 nC

Pd - Power Dissipation:: 83 W

Configuration:: Single

Packaging:: Tube

Height:: 15.65 mm

Length:: 10 mm

Transistor Type:: 1 N-Channel

Width:: 4.4 mm

Brand:: Infineon / IR

Product Type:: MOSFET

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Part # Aliases:: SP001571808

Unit Weight:: 0.211644 oz

Tags: IRL3103P, IRL3103, IRL31, IRL3, IRL

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRL3103PBF Description

***ied Electronics & Automation: MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 12 Milliohms;ID 64A;TO-220AB;PD 94W;VGS +/-1

***ure Electronics: Single N-Channel 30 V 12 mOhm 33 nC HEXFET® Power Mosfet - TO-220-3

***p One Stop Japan: Trans MOSFET N-CH Si 30V 64A 3-Pin(3+Tab) TO-220AB Tube

***ernational Rectifier: 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fully Avalanche Rated; Logic Level

***ment14 APAC: N CHANNEL MOSFET, 30V, 64A TO-220AB; Tra; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:30V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:83W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:64A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.8°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:83W; Power Dissipation Pd:83W; Pulse Current Idm:220A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V; Voltage Vgs th Min:1V

IRL3103PBF More Information

30V HEXFET® Power MOSFETs: Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
IRL3103PBF DISTI # IRL3103PBF-ND	Infineon Technologies AG	MOSFET N-CH 30V 64A TO-220AB RoHS: Compliant Min Qty: 1 Container: Tube	4477In Stock	1000:$0.5879 500:$0.7447 100:$0.9602 10:$1.2150 1:$1.3700
IRL3103PBF DISTI # C1S322000631599	Infineon Technologies AG	Trans MOSFET N-CH Si 30V 64A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	3000	3000:$0.5850 1000:$0.6030 500:$0.6570 200:$0.7450 100:$0.7690 50:$0.8810 10:$1.3100 5:$1.4600
IRL3103PBF DISTI # SP001571808	Infineon Technologies AG	Trans MOSFET N-CH 30V 64A 3-Pin(3+Tab) TO-220AB (Alt: SP001571808) RoHS: Compliant Min Qty: 1	Europe - 1500	1:€0.5569 10:€0.4949 25:€0.4459 50:€0.4049 100:€0.3709 500:€0.3429 1000:€0.3179
IRL3103PBF DISTI # IRL3103PBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 64A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRL3103PBF) RoHS: Compliant Min Qty: 3000 Container: Tube	Americas - 0	3000:$0.4099 5000:$0.3949 8000:$0.3809 15000:$0.3679 30000:$0.3619
IRL3103PBF DISTI # 38K3051	Infineon Technologies AG	MOSFET, N, 30V, 56A, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:56A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.012ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,Power Dissipation RoHS Compliant: Yes	0	2500:$0.5340 1000:$0.5660 500:$0.6770 100:$0.7670 10:$0.9980 1:$1.1700
IRL3103PBF DISTI # 63J7752	Infineon Technologies AG	N CHANNEL MOSFET, 30V, 64A TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:64A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.012ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,MSL:- RoHS Compliant: Yes	446	2500:$0.5340 1000:$0.5660 1:$0.6170 10:$0.6170 100:$0.6170 500:$0.6170
IRL3103PBF DISTI # 70017086	Infineon Technologies AG	MOSFET,Power,N-Ch,VDSS 30V,RDS(ON) 12 Milliohms,ID 64A,TO-220AB,PD 94W,VGS +/-1 RoHS: Compliant	0	3000:$1.9300 6000:$1.8910 15000:$1.8340 30000:$1.7560 75000:$1.6410
IRL3103PBF DISTI # 942-IRL3103PBF	Infineon Technologies AG	MOSFET MOSFT 30V 56A 12mOhm 22nC LogLvlAB RoHS: Compliant	0	1:$1.1700 10:$0.9980 100:$0.7670 500:$0.6770 1000:$0.5350 2000:$0.4740
IRL3103PBF	Infineon Technologies AG	Power Field-Effect Transistor, 64A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	150	1000:$0.4700 500:$0.5000 100:$0.5200 25:$0.5400 1:$0.5800
IRL3103PBF DISTI # 1702241	Infineon Technologies AG	MOSFET N-CH 30V 64A HEXFET TO-220AB, TU	250	50:£0.7360 250:£0.5550 500:£0.4840
IRL3103PBF DISTI # IRL3103PBF	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,30V,56A,83W,TO220AB	207	1:$0.6900 3:$0.6300 10:$0.5300 50:$0.4700
IRL3103PBF DISTI # IRL3103PBF	Infineon Technologies AG	N-LogL 30V 64A 94W 0,012R TO220AB RoHS: Compliant	870	10:€0.6250 50:€0.3850 200:€0.3250 500:€0.3129
IRL3103PBF	International Rectifier	RoHS: Compliant	Europe - 510
IRL3103PBF DISTI # 8650969	Infineon Technologies AG	MOSFET, N, 30V, 56A, TO-220 RoHS: Compliant	3165	500:£0.3670 250:£0.4620 100:£0.4730 25:£0.6410 5:£0.7330
IRL3103PBF DISTI # 8650969	Infineon Technologies AG	MOSFET, N, 30V, 56A, TO-220 RoHS: Compliant	3153	2000:$0.7500 1000:$0.8470 500:$1.0800 100:$1.2200 10:$1.5800 1:$1.8500

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Availability

Stock:: Available
On Order:: 1984
Enter Quantity:

Current price of IRL3103PBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$1.16~~; ~~$1.16~~

10: ~~$1.00~~; ~~$9.98~~

100: ~~$0.77~~; ~~$76.70~~

500: ~~$0.68~~; ~~$338.50~~

1000: ~~$0.54~~; ~~$535.00~~

2000: ~~$0.47~~; ~~$948.00~~

10000: ~~$0.46~~; ~~$4 570.00~~

25000: ~~$0.44~~; ~~$11 050.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IRL3103PBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes