SIHB22N60E-GE3

SIHB22N60E-GE3
Mfr. #:
SIHB22N60E-GE3
Manufacturer:
Vishay
Description:
MOSFET N-CH 600V 21A D2PAK
Lifecycle:
New from this manufacturer.
Datasheet:
SIHB22N60E-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
SIHB22N60E-GE3 more Information
Product Attribute
Attribute Value
Tags
SIHB22N60E, SIHB22N60, SIHB22, SIHB2, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Part # Mfg. Description Stock Price
SIHB22N60E-GE3
DISTI # V99:2348_09219018
Vishay IntertechnologiesTrans MOSFET N-CH 600V 21A 3-Pin(2+Tab) D2PAK
RoHS: Compliant
718
  • 1000:$2.1720
  • 500:$2.3769
  • 250:$2.6410
  • 100:$2.7990
  • 10:$3.4110
  • 1:$4.4978
SIHB22N60E-GE3
DISTI # V36:1790_09219018
Vishay IntertechnologiesTrans MOSFET N-CH 600V 21A 3-Pin(2+Tab) D2PAK
RoHS: Compliant
0
  • 1000000:$2.0180
  • 500000:$2.0220
  • 100000:$2.6020
  • 10000:$3.7670
  • 1000:$3.9700
SIHB22N60E-GE3
DISTI # SIHB22N60E-GE3-ND
Vishay SiliconixMOSFET N-CH 600V 21A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Tube
6945In Stock
  • 5000:$1.9891
  • 3000:$2.0668
  • 1000:$2.1756
  • 100:$3.0303
  • 25:$3.4964
  • 10:$3.6990
  • 1:$4.1200
SIHB22N60E-GE3
DISTI # 31314797
Vishay IntertechnologiesTrans MOSFET N-CH 600V 21A 3-Pin(2+Tab) D2PAK
RoHS: Compliant
718
  • 4:$4.4978
SIHB22N60E-GE3
DISTI # SIHB22N60E-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 600V 21A 3-Pin(2+Tab) D2PAK (Alt: SIHB22N60E-GE3)
RoHS: Compliant
Min Qty: 1
Europe - 1000
  • 1000:€1.4900
  • 50:€1.5900
  • 100:€1.5900
  • 500:€1.5900
  • 25:€1.7900
  • 10:€2.1900
  • 1:€2.8900
SIHB22N60E-GE3
DISTI # SIHB22N60E-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 600V 21A 3-Pin(2+Tab) D2PAK - Rail/Tube (Alt: SIHB22N60E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Tube
Americas - 0
  • 6000:$1.7900
  • 10000:$1.7900
  • 2000:$1.8900
  • 4000:$1.8900
  • 1000:$1.9900
SIHB22N60E-GE3
DISTI # 83T7333
Vishay IntertechnologiesMOSFET, N CH, 600V, 21A, D2PAK,Transistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.15ohm,Rds(on) Test Voltage Vgs:10V,Power Dissipation Pd:227W,No. of Pins:3 RoHS Compliant: Yes939
  • 2500:$2.2000
  • 1000:$2.3000
  • 500:$2.6700
  • 100:$3.0200
  • 50:$3.2100
  • 25:$3.4200
  • 10:$3.6100
  • 1:$4.2900
SIHB22N60E-E3
DISTI # 781-SIHB22N60E-E3
Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant
2025
  • 1:$4.1400
  • 10:$3.4300
  • 100:$2.8200
  • 250:$2.7300
  • 500:$2.4500
  • 1000:$2.0700
  • 2000:$1.9600
SIHB22N60E-GE3
DISTI # 781-SIHB22N60E-GE3
Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant
2740
  • 1:$4.1400
  • 10:$3.4300
  • 100:$2.8200
  • 250:$2.7300
  • 500:$2.4500
  • 1000:$2.0700
  • 2000:$1.9600
SIHB22N60E-GE3
DISTI # 7689313P
Vishay IntertechnologiesMOSFET N-CHANNEL 600V 21A D2PAK, TU1653
  • 200:£1.8100
  • 100:£1.8500
  • 50:£1.9200
  • 10:£2.0900
SIHB22N60EGE3Vishay SiliconixPower Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant
250
    SIHB22N60E-GE3
    DISTI # TMOSP10774
    Vishay IntertechnologiesMOSFET650V 180mOhm21A TO263
    RoHS: Compliant
    Stock DE - 0Stock HK - 0Stock US - 0
    • 1000:$1.9200
    SIHB22N60E-GE3
    DISTI # XSKDRABV0051360
    Vishay Intertechnologies 
    RoHS: Compliant
    800 in Stock0 on Order
    • 800:$2.4400
    • 250:$2.6200
    SIHB22N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    RoHS: Compliant
    Americas - 46200
    • 50:$2.6850
    • 100:$2.4360
    • 250:$2.2160
    • 500:$2.1440
    • 1000:$1.9360
    SIHB22N60E-GE3
    DISTI # 2079772
    Vishay IntertechnologiesMOSFET, N CH, 600V, 21A, D2PAK3987
    • 500:£2.1000
    • 250:£2.5400
    • 100:£2.6000
    • 10:£3.1700
    • 1:£3.9700
    SIHB22N60E-GE3
    DISTI # 2079772
    Vishay IntertechnologiesMOSFET, N CH, 600V, 21A, D2PAK
    RoHS: Compliant
    1939
    • 3000:$3.1300
    • 1000:$3.2800
    • 100:$4.5700
    • 25:$5.2700
    • 10:$5.5800
    • 1:$6.2100
    Image Part # Description
    SIHB22N60EF-GE3

    Mfr.#: SIHB22N60EF-GE3

    OMO.#: OMO-SIHB22N60EF-GE3

    MOSFET Nch 600V Vds 30V Vgs TO-263; w/diode
    SIHB22N60AEL-GE3

    Mfr.#: SIHB22N60AEL-GE3

    OMO.#: OMO-SIHB22N60AEL-GE3

    MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    SIHB22N60EL-GE3

    Mfr.#: SIHB22N60EL-GE3

    OMO.#: OMO-SIHB22N60EL-GE3

    MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    SIHB22N65E-GE3

    Mfr.#: SIHB22N65E-GE3

    OMO.#: OMO-SIHB22N65E-GE3

    MOSFET 650V Vds 30V Vgs D2PAK (TO-263)
    SIHB22N60ET5-GE3

    Mfr.#: SIHB22N60ET5-GE3

    OMO.#: OMO-SIHB22N60ET5-GE3

    MOSFET 600V Vds E Series D2PAK TO-263
    SIHB22N60ET1-GE3

    Mfr.#: SIHB22N60ET1-GE3

    OMO.#: OMO-SIHB22N60ET1-GE3

    MOSFET 600V Vds E Series D2PAK TO-263
    SIHB22N65E-GE3

    Mfr.#: SIHB22N65E-GE3

    OMO.#: OMO-SIHB22N65E-GE3-VISHAY

    RF Bipolar Transistors MOSFET 650V 180mOhm@10V 22A N-Ch E-SRS
    SIHB22N60AE-GE3

    Mfr.#: SIHB22N60AE-GE3

    OMO.#: OMO-SIHB22N60AE-GE3-VISHAY

    MOSFET N-CH 600V 20A D2PAK
    SIHB22N60E-GE3

    Mfr.#: SIHB22N60E-GE3

    OMO.#: OMO-SIHB22N60E-GE3-VISHAY

    MOSFET N-CH 600V 21A D2PAK
    SIHB22N60SE3

    Mfr.#: SIHB22N60SE3

    OMO.#: OMO-SIHB22N60SE3-1190

    Power Field-Effect Transistor, 22A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    Availability
    Stock:
    Available
    On Order:
    5000
    Enter Quantity:
    Current price of SIHB22N60E-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $2.68
    $2.68
    10
    $2.55
    $25.51
    100
    $2.42
    $241.65
    500
    $2.28
    $1 141.15
    1000
    $2.15
    $2 148.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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