2SK3176(F)

2SK3176(F)
Mfr. #:
2SK3176(F)
Manufacturer:
Toshiba
Description:
MOSFET MOSFET N-Ch 200V 30A Rdson 0.052 Ohm
Lifecycle:
New from this manufacturer.
Datasheet:
2SK3176(F) Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Toshiba
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-3PN-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
200 V
Id - Continuous Drain Current:
30 A
Rds On - Drain-Source Resistance:
52 mOhms
Vgs - Gate-Source Voltage:
20 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
150 W
Configuration:
Single
Channel Mode:
Enhancement
Height:
20 mm
Length:
15.5 mm
Series:
2SK3176
Transistor Type:
1 N-Channel
Width:
4.5 mm
Brand:
Toshiba
Fall Time:
25 ns
Product Type:
MOSFET
Rise Time:
15 ns
Factory Pack Quantity:
50
Subcategory:
MOSFETs
Unit Weight:
0.245577 oz
Tags
2SK317, 2SK31, 2SK3, 2SK
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH Si 200V 30A 3-Pin(3+Tab) TO-3PN
***p One Stop Japan
Trans MOSFET N-CH 200V 30A 3-Pin(3+Tab) TO-3PN
***Components
MOSFET N-Channel 200V 30A TO-3PN
***i-Key
MOSFET N-CH 200V 30A TO-3PN
***ark
MOSFET N CH 30A 200V TO3P; Transistor Type:Power MOSFET; Max Current Id:30A; Max Voltage Vds:200V; On State Resistance:0.052ohm; Rds Measurement Voltage:10V; Max Voltage Vgs:20V; Power Dissipation:150W; Transistor Case Style:TO-3P; ;RoHS Compliant: Yes
***nell
MOSFET N CH 30A 200V TO3P; Transistor Type:Power MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:30A; On State Resistance:0.052ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3.5V; Case Style:TO-3P; Termination Type:Through Hole; Transistor Case Style:TO-3P
***ment14 APAC
MOSFET, N CH, 30A, 200V, TO3P; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:200V; On Resistance Rds(on):52mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.5V; Power Dissipation Pd:150W; Transistor Case Style:TO-3P; No. of Pins:3; Current Id Max:30A; Package / Case:TO-3P; Power Dissipation Pd:150W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Part # Mfg. Description Stock Price
2SK3176(F)
DISTI # C1S751200708671
Toshiba America Electronic ComponentsTrans MOSFET N-CH 200V 30A 3-Pin(3+Tab) TO-3PN
RoHS: Compliant
2090
  • 200:$10.0000
  • 100:$10.1000
  • 50:$10.9000
  • 25:$12.2000
  • 10:$12.8000
  • 5:$13.5000
2SK3176(F)
DISTI # 757-2SK3176(F)
Toshiba America Electronic ComponentsMOSFET MOSFET N-Ch 200V 30A Rdson 0.052 Ohm
RoHS: Compliant
0
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    Availability
    Stock:
    Available
    On Order:
    1500
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