AFT27S010NT1

AFT27S010NT1
Mfr. #:
AFT27S010NT1
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors Airfast RF Pwr LDMOS Trx, .7-3.6GHz 1.26W
Lifecycle:
New from this manufacturer.
Datasheet:
AFT27S010NT1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
AFT27S010NT1 more Information
Product Attribute
Attribute Value
Manufacturer:
NXP
Product Category:
RF MOSFET Transistors
Transistor Polarity:
N-Channel
Technology:
Si
Id - Continuous Drain Current:
90 mA
Vds - Drain-Source Breakdown Voltage:
- 500 mV, 65 V
Gain:
21.7 dB
Output Power:
1.26 W
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Mounting Style:
SMD/SMT
Package / Case:
PLD-1.5W
Packaging:
Reel
Operating Frequency:
100 MHz to 3.6 GHz
Type:
RF Power MOSFET
Brand:
NXP / Freescale
Number of Channels:
1 Channel
Moisture Sensitive:
Yes
Product Type:
RF MOSFET Transistors
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Vgs - Gate-Source Voltage:
10 V
Vgs th - Gate-Source Threshold Voltage:
1.2 V
Part # Aliases:
935317972515
Unit Weight:
0.009877 oz
Tags
AFT27S010, AFT27S01, AFT27, AFT2, AFT
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***escale Semiconductor
Airfast RF Power LDMOS Transistor, 728-2700 MHz, 1.26 W Avg., 28 V
***W
RF Power Transistor,100 to 3600 MHz, 10 W, Typ Gain in dB is 21.7 @ 2170 MHz, 28 V, LDMOS, SOT1811
***et
AIRFAST RF POWER LDMOS TRANSISTOR, 728-2700 MHZ, 1.26 W AVG.
***ical
Trans RF MOSFET N-CH 65V 3-Pin PLD-1.5W T/R
***et Europe
Trans MOSFET N-CH 65V 2-Pin PLD-1.5W T/R
***i-Key
IC RF TRANSISTOR PLD-1.5W
***hardson RFPD
RF POWER TRANSISTOR
***ark
Rf Fet, 65V, 728Mhz-3600Mhz, Pld-1.5W; Drain Source Voltage Vds:65V; Continuous Drain Current Id:-; Power Dissipation Pd:-; Operating Frequency Min:728Mhz; Operating Frequency Max:3600Mhz; Rf Transistor Case:pld-1.5W; No. Of Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. RF FET, 65V, 728MHZ-3600MHZ, PLD-1.5W; Drain Source Voltage Vds:65V; Continuous Drain Current Id:-; Power Dissipation Pd:-; Operating Frequency Min:728MHz; Operating Frequency Max:3600MHz; RF Transistor Case:PLD-1.5W; No. of Pins:2Pins; Operating Temperature Max:150°C; Product Range:AFT27S010N Series; MSL:MSL 3 - 168 hours; SVHC:No SVHC (15-Jan-2019)
***nell
RF FET, 65V, 728MHZ-3600MHZ, PLD-1.5W; Tensione Drain Source Vds:65V; Corrente Continua di Drain Id:-; Dissipazione di Potenza Pd:-; Frequenza Operativa Min:728MHz; Frequenza Operativa Max:3600MHz; Case Transistor RF:PLD-1.5W; No. di Pin:2Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:AFT27S010N Series; Livello di Sensibilità all'Umidità (MSL):MSL 3 - 168 ore; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2019)
MRF15xx Lateral N-Ch Broadband RF Power MOSFETs
NXP MRF15xx Lateral N-Channel Broadband RF Power MOSFETs are designed for broadband commercial and industrial applications with frequencies of 175 MHz or 520 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 7.5 volt or 12.5 volt portable FM equipment.Learn More
AFT27S010NT1 RF Power LDMOS Transistor
NXP Semiconductors AFT27S010NT1 RF Power LDMOS Transistor is designed for cellular base station applications covering the frequency range from 728MHz to 3600MHz. This LDMOS transistor offers greater negative Gate-Source voltage range for improved Class C operation. The AFT27S010NT1 transistor is designed for Digital Predistortion Error Correction systems. This transistor operates at a temperature range from -40°C to 150°C and offers a typical gain of 21.7dB.
Part # Mfg. Description Stock Price
AFT27S010NT1
DISTI # V72:2272_07185778
NXP SemiconductorsTrans RF MOSFET N-CH 65V 3-Pin PLD-1.5W T/R
RoHS: Compliant
797
  • 500:$10.1000
  • 250:$10.9520
  • 100:$11.8430
  • 25:$13.7040
  • 10:$14.1710
  • 1:$15.4930
AFT27S010NT1
DISTI # AFT27S010NT1CT-ND
NXP SemiconductorsFET RF NCH 65V 2700MHZ PLD1.5W
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1045In Stock
  • 500:$11.1021
  • 100:$12.4803
  • 10:$14.7770
  • 1:$16.0800
AFT27S010NT1
DISTI # AFT27S010NT1DKR-ND
NXP SemiconductorsFET RF NCH 65V 2700MHZ PLD1.5W
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1045In Stock
  • 500:$11.1021
  • 100:$12.4803
  • 10:$14.7770
  • 1:$16.0800
AFT27S010NT1
DISTI # AFT27S010NT1TR-ND
NXP SemiconductorsFET RF NCH 65V 2700MHZ PLD1.5W
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
1000In Stock
  • 1000:$9.8867
AFT27S010NT1
DISTI # 25766876
NXP SemiconductorsTrans RF MOSFET N-CH 65V 3-Pin PLD-1.5W T/R
RoHS: Compliant
797
  • 500:$10.1000
  • 250:$10.9520
  • 100:$11.8430
  • 25:$13.7040
  • 10:$14.1710
  • 1:$15.4930
AFT27S010NT1
DISTI # AFT27S010NT1
NXP SemiconductorsTrans MOSFET N-CH 65V 2-Pin PLD-1.5W T/R (Alt: AFT27S010NT1)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Asia - 0
  • 1000:$9.0958
  • 2000:$8.8431
  • 3000:$8.6041
  • 5000:$8.3777
  • 10000:$8.2689
  • 25000:$8.1629
  • 50000:$7.9588
AFT27S010NT1
DISTI # AFT27S010NT1
NXP SemiconductorsTrans MOSFET N-CH 65V 2-Pin PLD-1.5W T/R - Tape and Reel (Alt: AFT27S010NT1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$10.7900
  • 2000:$10.3900
  • 4000:$9.9900
  • 6000:$9.5900
  • 10000:$9.3900
AFT27S010NT1
DISTI # 60AC7751
NXP Semiconductors 988
  • 1:$16.0800
  • 10:$14.7800
  • 25:$14.1300
  • 50:$13.3100
  • 100:$12.4900
  • 250:$11.1500
  • 500:$10.7800
AFT27S010NT1
DISTI # 841-AFT27S010NT1
NXP SemiconductorsRF MOSFET Transistors Airfast RF Pwr LDMOS Trx, .7-3.6GHz 1.26W
RoHS: Compliant
1016
  • 1:$16.0800
  • 10:$14.7800
  • 25:$14.1300
  • 100:$12.4900
  • 250:$11.1500
  • 500:$10.7800
  • 1000:$9.8900
AFT27S010NT1
DISTI # AFT27S010NT1
NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant
82109
  • 1:$16.6100
  • 10:$15.0200
  • 25:$14.2000
AFT27S010NT1
DISTI # 2890594
NXP SemiconductorsRF FET, 65V, 728MHZ-3600MHZ, PLD-1.5W
RoHS: Compliant
988
  • 1:£12.5200
  • 5:£12.1800
  • 10:£11.1900
  • 50:£10.3200
  • 100:£9.4500
AFT27S010NT1
DISTI # 2890594
NXP SemiconductorsRF FET, 65V, 728MHZ-3600MHZ, PLD-1.5W
RoHS: Compliant
988
  • 1:$25.4500
  • 10:$23.3900
  • 100:$19.7500
  • 500:$17.5700
AFT27S010NT1
DISTI # C1S537101527111
NXP SemiconductorsTrans RF MOSFET N-CH 65V 3-Pin PLD-1.5W T/R
RoHS: Compliant
881
  • 250:$10.9520
  • 25:$13.7040
  • 1:$15.4930
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Availability
Stock:
Available
On Order:
1985
Enter Quantity:
Current price of AFT27S010NT1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$16.08
$16.08
10
$14.78
$147.80
25
$14.13
$353.25
100
$12.49
$1 249.00
250
$11.15
$2 787.50
500
$10.78
$5 390.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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