GA05JT01-46

GA05JT01-46
Mfr. #:
GA05JT01-46
Manufacturer:
GeneSiC Semiconductor
Description:
JFET SiC High Temperature JT
Lifecycle:
New from this manufacturer.
Datasheet:
GA05JT01-46 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
GeneSiC Semiconductor
Product Category:
JFET
RoHS:
Y
Technology:
SiC
Mounting Style:
Through Hole
Package / Case:
TO-46-3
Transistor Polarity:
N-Channel
Configuration:
Single
Vds - Drain-Source Breakdown Voltage:
100 V
Vgs - Gate-Source Breakdown Voltage:
30 V
Drain-Source Current at Vgs=0:
5.8 A
Id - Continuous Drain Current:
9 A
Rds On - Drain-Source Resistance:
620 mOhms
Pd - Power Dissipation:
20 W
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 225 C
Packaging:
Bulk
Type:
JFET
Brand:
GeneSiC Semiconductor
Gate-Source Cutoff Voltage:
3.45 V
Maximum Drain Gate Voltage:
25 V
Factory Pack Quantity:
50
Tags
GA05J, GA05, GA0
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
TRANS SJT 100V 9A
***ark
JUNCTION TRANSISTOR, SIC, TO-206AB-3; Breakdown Voltage Vbr:-; Zero Gate Voltage Drain Current Idss Min:-; Zero Gate Voltage Drain Current Idss Max:-; Gate-Source Cutoff Voltage Vgs(off) Max:-; Transistor Type:JFET; No. of Pins:3 PinRoHS Compliant: Yes
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Availability
Stock:
Available
On Order:
1986
Enter Quantity:
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