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HGTP10N120BN

HGTP10N120BN
Mfr. #:
HGTP10N120BN
Manufacturer:
ON Semiconductor
Description:
IGBT 1200V 35A 298W TO220AB
Lifecycle:
New from this manufacturer.
Datasheet:
HGTP10N120BN Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer
Fairchild Semiconductor
Product Category
IGBTs - Single
Series
-
Packaging
Tube
Package-Case
TO-220-3
Input-Type
Standard
Mounting-Type
Through Hole
Supplier-Device-Package
TO-220AB
Power-Max
298W
Reverse-Recovery-Time-trr
-
Current-Collector-Ic-Max
35A
Voltage-Collector-Emitter-Breakdown-Max
1200V
IGBT-Type
NPT
Current-Collector-Pulsed-Icm
80A
Vce-on-Max-Vge-Ic
2.7V @ 15V, 10A
Switching-Energy
320μJ (on), 800μJ (off)
Gate-Charge
100nC
Td-on-off-25°C
23ns/165ns
Test-Condition
960V, 10A, 10 Ohm, 15V
Tags
HGTP10N1, HGTP10, HGTP1, HGTP, HGT
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N=-CH 1200V 35A 298000mW 3-Pin(3+Tab) TO-220AB Rail
***p One Stop Global
Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-220AB Rail
***ure Electronics
N-Channel 1200 V 35 A Flange Mount IGBT - TO-220AB
***ark
RAIL / PWR IGBT 35A 1200V NPT N-CHANNEL TO-220AB
***et
PWR IGBT 35A 1200V NPT N-CHANNEL TO-220AB
***i-Key
IGBT NPT N-CH 1200V 35A TO-220AB
*** Source Electronics
IGBT 1200V 35A 298W TO220AB
***ser
IGBTs 35A, 1200V, N-Ch
***Semiconductor
1200V, NPT IGBT
***rchild Semiconductor
HGTP10N120BN is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter, motor control and power supplies.
Part # Mfg. Description Stock Price
HGTP10N120BN
DISTI # HGTP10N120BNFS-ND		ON SemiconductorIGBT 1200V 35A 298W TO220AB
RoHS: Compliant
Min Qty: 800
Container: Tube		Limited Supply - Call
  • 800:$1.7840
HGTP10N120BN
DISTI # HGTP10N120BN		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: HGTP10N120BN)
RoHS: Compliant
Min Qty: 800
Container: Tube		Americas - 0
  • 800:$1.1900
  • 1600:$1.1900
  • 3200:$1.0900
  • 4800:$1.0900
  • 8000:$1.0900
HGTP10N120BN
DISTI # HGTP10N120BN		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-220AB Rail (Alt: HGTP10N120BN)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€1.4900
  • 10:€1.3900
  • 25:€1.1900
  • 50:€1.1900
  • 100:€1.0900
  • 500:€1.0900
  • 1000:€1.0900
HGTP10N120BN
DISTI # 98B1940		ON SemiconductorTRANSISTOR,IGBT,N-CHAN,1.2kV V(BR)CES,17A I(C),TO-220AB RoHS Compliant: Yes0
  • 1:$3.1700
  • 10:$2.5500
  • 100:$2.0500
  • 500:$1.8000
  • 1000:$1.4900
  • 2500:$1.3700
  • 10000:$1.3000
HGTP10N120BNFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel
RoHS: Compliant		1696
  • 1000:$1.9500
  • 500:$2.0500
  • 100:$2.1300
  • 25:$2.2300
  • 1:$2.4000
HGTP10N120BNFSFairchild Semiconductor Corporation 
RoHS: Not Compliant		257
    HGTP10N120BN
    DISTI # 512-HGTP10N120BN    		ON SemiconductorIGBT Transistors 35A 1200V N-Ch
    RoHS: Compliant    		0
      HGTP10N120BNON SemiconductorINSTOCK403
        Image Part # Description
        HGTP10N120BN G10N120BN

        Mfr.#: HGTP10N120BN G10N120BN

        OMO.#: OMO-HGTP10N120BN-G10N120BN-1190

        		 New and Original
        HGTP10N120BN,10N120BN,

        Mfr.#: HGTP10N120BN,10N120BN,

        OMO.#: OMO-HGTP10N120BN-10N120BN--1190

        		 New and Original
        HGTP10N40C1D

        Mfr.#: HGTP10N40C1D

        OMO.#: OMO-HGTP10N40C1D-1190

        		 Insulated Gate Bipolar Transistor, 17.5A I(C), 400V V(BR)CES, N-Channel, TO-220AB
        HGTP10N40E1

        Mfr.#: HGTP10N40E1

        OMO.#: OMO-HGTP10N40E1-1190

        		 Insulated Gate Bipolar Transistor, 10A I(C), 400V V(BR)CES, N-Channel, TO-220AB
        HGTP10N40E1D

        Mfr.#: HGTP10N40E1D

        OMO.#: OMO-HGTP10N40E1D-1190

        		 Insulated Gate Bipolar Transistor, 17.5A I(C), 400V V(BR)CES, N-Channel, TO-220AB
        HGTP10N40F1D

        Mfr.#: HGTP10N40F1D

        OMO.#: OMO-HGTP10N40F1D-1190

        		 Insulated Gate Bipolar Transistor, 12A I(C), 400V V(BR)CES, N-Channel, TO-220AB
        HGTP10N50C1D

        Mfr.#: HGTP10N50C1D

        OMO.#: OMO-HGTP10N50C1D-1190

        		 New and Original
        HGTP10N50E1

        Mfr.#: HGTP10N50E1

        OMO.#: OMO-HGTP10N50E1-1190

        		 Insulated Gate Bipolar Transistor, 10A I(C), 500V V(BR)CES, N-Channel, TO-220AB
        HGTP10N50E1D

        Mfr.#: HGTP10N50E1D

        OMO.#: OMO-HGTP10N50E1D-1190

        		 Insulated Gate Bipolar Transistor, 17.5A I(C), 500V V(BR)CES, N-Channel, TO-220AB
        HGTP10N50F1D

        Mfr.#: HGTP10N50F1D

        OMO.#: OMO-HGTP10N50F1D-1190

        		 New and Original
        Availability
        Stock:
        Available
        On Order:
        4500
        Enter Quantity:
        Current price of HGTP10N120BN is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
        Reference price (USD)
        Quantity
        Unit Price
        Ext. Price
        1
        $1.64
        $1.64
        10
        $1.55
        $15.53
        100
        $1.47
        $147.15
        500
        $1.39
        $694.90
        1000
        $1.31
        $1 308.00
        Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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