TK8A65W,S5X

TK8A65W,S5X
Mfr. #:
TK8A65W,S5X
Manufacturer:
Toshiba
Description:
MOSFET Power MOSFET N-Channel
Lifecycle:
New from this manufacturer.
Datasheet:
TK8A65W,S5X Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
TK8A65W,S5X DatasheetTK8A65W,S5X Datasheet (P4-P6)TK8A65W,S5X Datasheet (P7-P9)TK8A65W,S5X Datasheet (P10)
ECAD Model:
More Information:
TK8A65W,S5X more Information
Product Attribute
Attribute Value
Manufacturer:
Toshiba
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220FP-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
650 V
Id - Continuous Drain Current:
7.8 A
Rds On - Drain-Source Resistance:
530 mOhms
Vgs th - Gate-Source Threshold Voltage:
2.5 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
16 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
30 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
DTMOSIV
Packaging:
Tube
Height:
15 mm
Length:
10 mm
Series:
TK8A65W
Width:
4.5 mm
Brand:
Toshiba
Fall Time:
4 ns
Product Type:
MOSFET
Rise Time:
20 ns
Factory Pack Quantity:
50
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
60 ns
Typical Turn-On Delay Time:
40 ns
Unit Weight:
0.211644 oz
Tags
TK8A65W, TK8A65, TK8A6, TK8A, TK8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Gen-4 Super Junction DTMOS MOSFETs
Toshiba Gen-4 Super-Junction DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, DTMOSIV which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. With a reduction in the RDS(on) it makes it possible to house lower RDS(on) chips in the same packages. This helps to improve the efficiency and reduce the size of power supplies. These devices are ideal for use with switching regulators.
Image Part # Description
STP16N65M2

Mfr.#: STP16N65M2

OMO.#: OMO-STP16N65M2

MOSFET N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220 package
STP16N65M2

Mfr.#: STP16N65M2

OMO.#: OMO-STP16N65M2-STMICROELECTRONICS

IGBT Transistors MOSFET POWER MOSFET
Availability
Stock:
75
On Order:
2058
Enter Quantity:
Current price of TK8A65W,S5X is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.79
$1.79
10
$1.44
$14.40
100
$1.16
$116.00
500
$1.01
$505.00
1000
$0.84
$836.00
2500
$0.78
$1 945.00
5000
$0.75
$3 745.00
10000
$0.72
$7 200.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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