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FQU2N60CTU

FQU2N60CTU
Mfr. #:
FQU2N60CTU
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET 600V N-Channel Adv Q-FET C-Series
Lifecycle:
New from this manufacturer.
Datasheet:
FQU2N60CTU Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
E
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-251-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
1.9 A
Rds On - Drain-Source Resistance:
4.7 Ohms
Vgs - Gate-Source Voltage:
30 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
2.5 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Height:
6.3 mm
Length:
6.8 mm
Series:
FQU2N60C
Transistor Type:
1 N-Channel
Type:
MOSFET
Width:
2.5 mm
Brand:
ON Semiconductor / Fairchild
Forward Transconductance - Min:
5 S
Fall Time:
28 ns
Product Type:
MOSFET
Rise Time:
25 ns
Factory Pack Quantity:
5040
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
24 ns
Typical Turn-On Delay Time:
9 ns
Unit Weight:
0.012102 oz
Tags
FQU2N60C, FQU2N60, FQU2N6, FQU2N, FQU2, FQU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 5, N-Channel MOSFET, 1.9 A, 600 V, 3-Pin IPAK ON Semiconductor FQU2N60CTU
***Semiconductor
Power MOSFET, N-Channel, QFET®, 600 V, 1.9 A, 4.7 Ω, IPAK
***itex
Transistor N-MOSFET FQU2N60CTU, IPAK, Fairchild
***ure Electronics
N-Channel 600 V 4.7 Ohm Through Hole Power Mosfet - IPAK-3
***p One Stop Global
Trans MOSFET N-CH 600V 1.9A 3-Pin(3+Tab) IPAK Tube
***ser
MOSFETs 600V N-Channel Adv Q-FET C-Series
*** Source Electronics
MOSFET N-CH 600V 1.9A IPAK
***ark
Continuous Drain Current Id:1.9A; Drain Source Voltage Vds:600V; Operating Temperature Max:150�C; Product Range:QFET Series; Automotive Qualification Standard:-; MSL:- RoHS Compliant: Yes
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Part # Mfg. Description Stock Price
FQU2N60CTU
DISTI # 33614281		ON SemiconductorQFC 600V 4.7OHM IPAK3498
  • 33:$0.3107
FQU2N60CTU
DISTI # FQU2N60CTU-ND		ON SemiconductorMOSFET N-CH 600V 1.9A IPAK
RoHS: Compliant
Min Qty: 1
Container: Tube		37In Stock
  • 5000:$0.3670
  • 2500:$0.3863
  • 500:$0.5243
  • 100:$0.6347
  • 25:$0.7728
  • 10:$0.8140
  • 1:$0.9100
FQU2N60CTU
DISTI # V36:1790_06359742		ON SemiconductorQFC 600V 4.7OHM IPAK0
  • 5040000:$0.2706
  • 2520000:$0.2714
  • 504000:$0.4406
  • 50400:$0.8375
  • 5040:$0.9100
FQU2N60CTU
DISTI # FQU2N60CTU		ON SemiconductorTrans MOSFET N-CH 600V 1.9A 3-Pin(3+Tab) IPAK Rail - Rail/Tube (Alt: FQU2N60CTU)
RoHS: Compliant
Min Qty: 5040
Container: Tube		Americas - 430
  • 50400:$0.2949
  • 30240:$0.3019
  • 20160:$0.3059
  • 10080:$0.3099
  • 5040:$0.3119
FQU2N60CTU
DISTI # FQU2N60CTU		ON SemiconductorTrans MOSFET N-CH 600V 1.9A 3-Pin(3+Tab) IPAK Rail - Bulk (Alt: FQU2N60CTU)
RoHS: Compliant
Min Qty: 834
Container: Bulk		Americas - 0
  • 8340:$0.3699
  • 4170:$0.3789
  • 2502:$0.3839
  • 1668:$0.3889
  • 834:$0.3919
FQU2N60CTU
DISTI # FQU2N60CTU		ON SemiconductorTrans MOSFET N-CH 600V 1.9A 3-Pin(3+Tab) IPAK Rail (Alt: FQU2N60CTU)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€0.2829
  • 500:€0.3049
  • 100:€0.3309
  • 50:€0.3609
  • 25:€0.3969
  • 10:€0.4409
  • 1:€0.4959
FQU2N60CTU
DISTI # FQU2N60CTU		ON SemiconductorTrans MOSFET N-CH 600V 1.9A 3-Pin(3+Tab) IPAK Rail (Alt: FQU2N60CTU)
RoHS: Compliant
Min Qty: 5040		Asia - 0
  • 252000:$0.3746
  • 126000:$0.3808
  • 50400:$0.3940
  • 25200:$0.4080
  • 15120:$0.4232
  • 10080:$0.4394
  • 5040:$0.4570
FQU2N60CTU.
DISTI # 60AC9683		ON SemiconductorContinuous Drain Current Id:1.9A,Drain Source Voltage Vds:600V,Operating Temperature Max:150°C,Product Range:QFET Series,Automotive Qualification Standard:-,MSL:- RoHS Compliant: Yes0
  • 50400:$0.2860
  • 30240:$0.2940
  • 20160:$0.2970
  • 10080:$0.3010
  • 1:$0.3030
FQU2N60CTU
DISTI # 512-FQU2N60CTU		ON SemiconductorMOSFET 600V N-Channel Adv Q-FET C-Series
RoHS: Compliant		4617
  • 1:$0.9300
  • 10:$0.7990
  • 100:$0.6140
  • 500:$0.5430
  • 1000:$0.4290
  • 2500:$0.3800
  • 10000:$0.3660
FQU2N60CTUFairchild Semiconductor CorporationPower Field-Effect Transistor, 1.9A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		42125
  • 1000:$0.3400
  • 500:$0.3600
  • 100:$0.3800
  • 25:$0.3900
  • 1:$0.4200
FQU2N60CTU
DISTI # 6715357		ON SemiconductorMOSFET N-CHANNEL 600V 1.9A IPAK, PK80
  • 250:£0.4020
  • 100:£0.4360
  • 25:£0.4740
  • 5:£0.5160
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Availability
Stock:
Available
On Order:
1987
Enter Quantity:
Current price of FQU2N60CTU is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.86
$0.86
10
$0.74
$7.35
100
$0.56
$56.50
500
$0.50
$249.50
1000
$0.39
$394.00
2500
$0.35
$872.50
10000
$0.34
$3 360.00
25000
$0.32
$8 125.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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