TK290A65Y,S4X

TK290A65Y,S4X
Mfr. #:
TK290A65Y,S4X
Manufacturer:
Toshiba
Description:
MOSFET N-Ch DTMOSV 650V 35W 730pF 11.5A
Lifecycle:
New from this manufacturer.
Datasheet:
TK290A65Y,S4X Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
TK290A65Y,S4X DatasheetTK290A65Y,S4X Datasheet (P4-P6)TK290A65Y,S4X Datasheet (P7-P9)TK290A65Y,S4X Datasheet (P10)
ECAD Model:
More Information:
TK290A65Y,S4X more Information
Product Attribute
Attribute Value
Manufacturer:
Toshiba
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220SIS-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
650 V
Id - Continuous Drain Current:
11.5 A
Rds On - Drain-Source Resistance:
230 mOhms
Vgs th - Gate-Source Threshold Voltage:
3 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
25 nC
Minimum Operating Temperature:
-
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
35 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
DTMOSV
Packaging:
Tube
Series:
TK290A65Y
Transistor Type:
1 N-Channel
Brand:
Toshiba
Fall Time:
8.5 ns
Product Type:
MOSFET
Rise Time:
25 ns
Factory Pack Quantity:
50
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
170 ns
Typical Turn-On Delay Time:
65 ns
Unit Weight:
0.068784 oz
Tags
TK290A, TK290, TK29, TK2
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
X35 Pb-F Power Mosfet Transistor To-220Sis Pd=35W F=1Mhz Rohs Compliant: Yes
***ical
Trans MOSFET N-CH Si 650V 11.5A 3-Pin(3+Tab) TO-220SIS Tube
***et
Power MOSFET N-Channel 650V 11.5A 3-Pin SC-67 Tube
***i-Key
MOSFET N-CH 650V 11.5A TO220SIS
DTMOS V Super Junction MOSFETs
Toshiba DTMOS V Super Junction MOSFETs are the next generation of N-channel, deep trench semiconductor technology for high-efficient power MOSFETs. The DTMOS V operates with lower EMI noise, and a 17% reduction On Resistance RDS(ON) compared to the DTMOS IV MOSFETs. The DTMOS V has a deep trench etching process, that results in a narrowing of cell pitch, and a lowering of RDS(ON) when compared with more conventional planar processes. DTMOS V Super Junction MOSFETs are ideal to improve the performance, and facilitate the design of power conversion applications. Applications that include switching power supplies, power factor correction (PFC) designs, and LED lighting. Learn More
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Availability
Stock:
Available
On Order:
1984
Enter Quantity:
Current price of TK290A65Y,S4X is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.56
$1.56
10
$1.25
$12.50
100
$1.00
$100.00
500
$0.88
$438.00
1000
$0.72
$725.00
2500
$0.68
$1 690.00
5000
$0.65
$3 255.00
10000
$0.62
$6 250.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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