TGF2060

Mfr. #:: TGF2060
Manufacturer:: Qorvo
Description:: RF JFET Transistors DC-20GHz NF 1.4dB Gain 12dB P1dB 28dBm
Lifecycle:: New from this manufacturer.
Datasheet:: TGF2060 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: TGF2060 more Information

Product Attribute
Attribute Value

Manufacturer:: Qorvo

Product Category:: RF JFET Transistors

RoHS:: Y

Transistor Type:: pHEMT

Technology:: GaAs

Gain:: 12 dB

Vds - Drain-Source Breakdown Voltage:: 8 V

Vgs - Gate-Source Breakdown Voltage:: - 3 V

Id - Continuous Drain Current:: 194 mA

Minimum Operating Temperature:: - 65 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 2.1 W

Mounting Style:: SMD/SMT

Packaging:: Gel Pack

Configuration:: Single

Operating Frequency:: 20 GHz

Operating Temperature Range:: - 65 C to + 150 C

Product:: RF JFET

Series:: TGF

Type:: GaAs pHEMT

Brand:: Qorvo

Forward Transconductance - Min:: 232 mS

NF - Noise Figure:: 1.4 dB

P1dB - Compression Point:: 28 dBm

Product Type:: RF JFET Transistors

Factory Pack Quantity:: 100

Subcategory:: Transistors

Part # Aliases:: 1098619

Tags: TGF20, TGF2, TGF

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

TGF2060 Description

***W: Transistor, DC- 20 GHz, 28 dBm, 12 dB, 1.4 dB NF, 8V, DIE

TGF2060 More Information

Triquint GaAs pHEMt Low Noise Amplifiers: TriQuint offers a wide variety of discrete transistor components using TriQuint's state-of-the-art ultra-low-noise 0.13µm pHEMT and 0.25µm E-pHEMT processes. These discrete devices allow customers full control when designing the circuits of low noise amplifiers (LNAs). The various discrete FETs offer NFmin as low as 0.15 dB and are usable up to 22 GHz. Matched pair transistors are also available and are ideal for balanced LNA designs.Learn More

TGF2040/60 Discrete GaAs pHEMTs: Qorvo TGF2040 400µm Discrete GaAs pHEMT and TGF2060 600µm Discrete GaAs pHEMT operate from DC to 20GHz and are designed to optimize microwave power and efficiency at high drain bias operating conditions. TGF2040 pHEMT typically provides 26dBm of output power at P1dB with gain of 13dB and 55% power-added efficiency at 1dB compression while TGF2060 typically provides 28dBm of output power at P1dB with gain of 12dB and 55% power-added efficiency at 1dB compression. Qorvo TGF2040 and TGF2060 pHEMTs are appropriate for high efficiency applications. Theses transistors feature a protective overcoat layer with silicon nitride that provides a level of environmental robustness and scratch protection.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
TGF2060 DISTI # 772-TGF2060	Qorvo	RF JFET Transistors DC-20GHz NF 1.4dB Gain 12dB P1dB 28dBm RoHS: Compliant	100	100:$7.3300 300:$6.8500 500:$6.4000 1000:$5.9800

TGF2060

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes