IRF6201PBF

IRF6201PBF
Mfr. #:
IRF6201PBF
Manufacturer:
Infineon / IR
Description:
MOSFET 20V 1 N-CH HEXFET 2.45mOhms 130nC
Lifecycle:
New from this manufacturer.
Datasheet:
IRF6201PBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF6201PBF DatasheetIRF6201PBF Datasheet (P4-P6)IRF6201PBF Datasheet (P7-P9)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SO-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
20 V
Id - Continuous Drain Current:
27 A
Rds On - Drain-Source Resistance:
2.45 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.1 V
Vgs - Gate-Source Voltage:
12 V
Qg - Gate Charge:
130 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
2.5 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Height:
1.75 mm
Length:
4.9 mm
Transistor Type:
1 N-Channel
Type:
HEXFET Power MOSFET
Width:
3.9 mm
Brand:
Infineon / IR
Fall Time:
265 ns
Product Type:
MOSFET
Rise Time:
100 ns
Factory Pack Quantity:
95
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
320 ns
Typical Turn-On Delay Time:
29 ns
Part # Aliases:
SP001570096
Unit Weight:
0.019048 oz
Tags
IRF6201, IRF620, IRF62, IRF6, IRF
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, 20V, 27A, 2.5 MOHM, 130 NC QG, 2.5V DRIVE CAPABLE, SO-8
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-Standard Pinout | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side
***ment14 APAC
MOSFET,N CH,20V,27A,SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:27A; Drain Source Voltage Vds:20V; On Resistance Rds(on):2.45mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.1V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:27A; Power Dissipation Pd:2.5W; Voltage Vgs Max:12V
Part # Mfg. Description Stock Price
IRF6201PBF
DISTI # IRF6201PBF-ND
Infineon Technologies AGMOSFET N-CH 20V 27A 8-SO
RoHS: Compliant
Min Qty: 3800
Container: Tube
Limited Supply - Call
    IRF6201PBF
    DISTI # 70019550
    Infineon Technologies AGMOSFET,20V,27A,2.5 MOHM,130 NC QG,2.5V DRIVE CAPABLE,SO-8
    RoHS: Compliant
    0
    • 3800:$0.5600
    • 7600:$0.5490
    • 19000:$0.5320
    IRF6201PBF
    DISTI # 942-IRF6201PBF
    Infineon Technologies AGMOSFET 20V 1 N-CH HEXFET 2.45mOhms 130nC
    RoHS: Compliant
    12
    • 1:$1.2900
    • 10:$1.1000
    • 100:$0.8490
    • 500:$0.7510
    • 1000:$0.5920
    IRF6201PBFInfineon Technologies AGPower Field-Effect Transistor, 27A I(D), 20V, 0.00245ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA
    RoHS: Compliant
    1615
    • 1000:$0.5000
    • 500:$0.5300
    • 100:$0.5500
    • 25:$0.5700
    • 1:$0.6200
    IRF6201PBFInternational RectifierPower Field-Effect Transistor, 27A I(D), 20V, 0.00245ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA
    RoHS: Compliant
    910
    • 1000:$0.5000
    • 500:$0.5300
    • 100:$0.5500
    • 25:$0.5700
    • 1:$0.6200
    IRF6201PBF
    DISTI # 1831072
    Infineon Technologies AGMOSFET,N CH,20V,27A,SO-8
    RoHS: Compliant
    0
    • 1:$2.0400
    • 10:$1.7500
    • 100:$1.3500
    • 500:$1.1900
    • 1000:$0.9370
    • 2500:$0.8550
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    Availability
    Stock:
    Available
    On Order:
    1500
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    Current price of IRF6201PBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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