RGT50TS65DGC11

Mfr. #:: RGT50TS65DGC11
Manufacturer:: ROHM Semiconductor
Description:: IGBT Transistors 650V 25A IGBT Stop Trench
Lifecycle:: New from this manufacturer.
Datasheet:: RGT50TS65DGC11 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: RGT50TS65DGC11 more Information

Product Attribute
Attribute Value

Manufacturer:: ROHM Semiconductor

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Package / Case:: TO-247-3

Mounting Style:: Through Hole

Collector- Emitter Voltage VCEO Max:: 650 V

Collector-Emitter Saturation Voltage:: 1.65 V

Maximum Gate Emitter Voltage:: 30 V

Continuous Collector Current at 25 C:: 48 A

Pd - Power Dissipation:: 174 W

Minimum Operating Temperature:: - 40 C

Maximum Operating Temperature:: + 175 C

Series:: RGT50TS65D

Packaging:: Tube

Continuous Collector Current Ic Max:: 48 A

Operating Temperature Range:: - 40 C to + 175 C

Brand:: ROHM Semiconductor

Continuous Collector Current:: 25 A

Gate-Emitter Leakage Current:: +/- 200 nA

Product Type:: IGBT Transistors

Factory Pack Quantity:: 450

Subcategory:: IGBTs

Part # Aliases:: RGT50TS65D

Unit Weight:: 1.340411 oz

Tags: RGT50TS, RGT50T, RGT5, RGT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

RGT50TS65DGC11 Description

***roFlash: Trans IGBT Chip N-CH 650V 48A 174000mW 3-Pin(3+Tab) TO-247N Bulk

***ment14 APAC: IGBT, SINGLE, 650V, 48A, TO-247N-3

***i-Key: IGBT TRNCH FIELD 650V 48A TO247N

***nell: IGBT, SINGLE, 650V, 48A, TO-247N-3; DC Collector Current: 48A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 174W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247N; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)

***ical: Trans IGBT Chip N-CH 650V 60A 250000mW 3-Pin(3+Tab) TO-247 Tube

***r Electronics: Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-247AB

***emi: 650V, 30A Field Stop Trench IGBT

*** Electronic Components: IGBT Transistors FS1TIGBT TO247 30A 650V

***rchild Semiconductor: Using novel field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performancefor solar inverter , UPS and digital power generator where low conduction and switching losses are essential.

***ical: Trans IGBT Chip N-CH 600V 47A 192000mW 3-Pin(3+Tab) TO-247AC Tube

*** Electronic Components: IGBT Transistors 600V UltraFast IGBT TO-247

***S: French Electronic Distributor since 1988

***i-Key Marketplace: IRGP6630D - IGBT WITH ULTRAFAST

***nell: IGBT, 600V, 47A, TO-247AC-3; DC Collector Current: 47A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 192W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247AC; No. of Pins: 3

***ark: IGBT Single Transistor, 53 A, 1.65 V, 200 W, 600 V, TO-247AC, 3

***(Formerly Allied Electronics): IRGP6640D-EPBF, IGBT Transistor, 53 A 600 V, 3-Pin TO-247 | Infineon IRGP6640D-EPBF

***ical: Trans IGBT Chip N-CH 600V 53A 3-Pin(3+Tab) TO-247AD Tube

***nell: IGBT, 600V, 53A, TO-247AC-3; DC Collector Current: 53A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247AC; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)

***ark: Igbt Single Transistor, 60 A, 1.55 V, 258 W, 650 V, To-247, 3 Rohs Compliant: Yes

***ical: Trans IGBT Chip N-CH 650V 60A 258000mW 3-Pin(3+Tab) TO-247 Tube

***icroelectronics: Trench gate field-stop IGBT M series, 650 V 30 A low loss

***nell: IGBT, SINGLE, 650V, 60A, TO-247-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.55V; Power Dissipation Pd: 258W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pi

***ure Electronics: NGTB Series 650 V 60 A Flange Mount Trench Field Stop IGBT - TO-247

***et: Trans IGBT Chip N-CH 650V 60A 3-Pin TO-247 Tube

***emi: IGBT, 650V 30A FS2 Induction Heating

***ark: 650V/30A FAST IGBT FSII TO-247 / TUBE ROHS COMPLIANT: YES

***r Electronics: Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel

***i-Key: IGBT TRENCH/FS 650V 60A TO247-3

RGT50TS65DGC11 More Information

Field Stop Trench IGBTs: ROHM Field Stop Trench IGBTs are energy saving high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit withstand time, and built-in very fast & soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioner, welder, and general inverters for industrial use.

Market price

Part #	Mfg.	Description	Stock	Price
RGT50TS65DGC11 DISTI # RGT50TS65DGC11-ND	ROHM Semiconductor	IGBT 650V 48A 174W TO-247N RoHS: Compliant Min Qty: 1 Container: Tube	434In Stock	2500:$1.6660 1000:$1.7493 500:$2.0742 250:$2.3116 100:$2.5615 25:$2.8112 10:$3.1240 1:$3.5000
RGT50TS65DGC11 DISTI # RGT50TS65DGC11	ROHM Semiconductor	Trans IGBT Chip N-CH 650V 48A 3-Pin TO-247N Tube - Rail/Tube (Alt: RGT50TS65DGC11) RoHS: Compliant Min Qty: 450 Container: Tube	Americas - 0	450:$1.7900 900:$1.6900 1800:$1.5900 2700:$1.4900 4500:$1.4900
RGT50TS65DGC11 DISTI # 76Y4986	ROHM Semiconductor	IGBT, SINGLE, 650V, 48A, TO-247N-3,DC Collector Current:48A,Collector Emitter Saturation Voltage Vce(on):1.65V,Power Dissipation Pd:174W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-247N,No. of Pins:3Pins,RoHS Compliant: Yes	52	500:$1.6500 250:$1.7100 100:$2.0300 50:$2.3400 25:$2.5000 10:$2.8600 1:$3.3000
RGT50TS65DGC11 DISTI # 755-RGT50TS65DGC11	ROHM Semiconductor	IGBT Transistors 650V 25A IGBT Stop Trench RoHS: Compliant	412	1:$3.1500 10:$2.6800 100:$2.3300 250:$2.2100 500:$1.9800 1000:$1.6700 2500:$1.5900 5000:$1.5300
RGT50TS65DGC11	ROHM Semiconductor	* FREE SHIPPING ORDERS OVER $100 *	24	20:$3.6400 6:$4.0040 1:$5.4600
RGT50TS65DGC11	ROHM Semiconductor	IGBT Transistors 650V 25A IGBT Stop Trench RoHS: Compliant	Americas -
RGT50TS65DGC11 DISTI # 2519782	ROHM Semiconductor	IGBT, SINGLE, 650V, 48A, TO-247N-3 RoHS: Compliant	52	500:£1.3600 250:£1.5200 100:£1.5900 10:£1.8400 1:£2.7000
RGT50TS65DGC11 DISTI # 2519782	ROHM Semiconductor	IGBT, SINGLE, 650V, 48A, TO-247N-3 RoHS: Compliant	52	250:$3.3300 100:$3.5100 10:$4.0400 1:$4.7500
RGT50TS65DGC11	ROHM Semiconductor	RoHS(ship within 1day)	30	1:$3.4600 10:$2.8400 50:$2.2900 100:$1.9500 500:$1.8500 1000:$1.8200

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Availability

Stock:: 412
On Order:: 2395
Enter Quantity:

Current price of RGT50TS65DGC11 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$3.15~~; ~~$3.15~~

10: ~~$2.68~~; ~~$26.80~~

100: ~~$2.33~~; ~~$233.00~~

250: ~~$2.21~~; ~~$552.50~~

500: ~~$1.98~~; ~~$990.00~~

1000: ~~$1.67~~; ~~$1 670.00~~

2500: ~~$1.59~~; ~~$3 975.00~~

5000: ~~$1.53~~; ~~$7 650.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

Start with

RGT50TS 3
RGT50T 4
RGT5 7
RGT 383

RGT50TS65DGC11

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes