TGF2929-HM

TGF2929-HM
Mfr. #:
TGF2929-HM
Manufacturer:
Qorvo
Description:
RF JFET Transistors DC-3.5GHz 100W 28V Gain 17.4dB GaN
Lifecycle:
New from this manufacturer.
Datasheet:
TGF2929-HM Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
TGF2929-HM more Information
Product Attribute
Attribute Value
Manufacturer:
Qorvo
Product Category:
RF JFET Transistors
RoHS:
Y
Transistor Type:
HEMT
Technology:
GaN SiC
Gain:
17.4 dB
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
50 V
Vgs - Gate-Source Breakdown Voltage:
- 2.8 V
Id - Continuous Drain Current:
7.2 A
Output Power:
132 W
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 85 C
Pd - Power Dissipation:
140 W
Mounting Style:
SMD/SMT
Packaging:
Waffle
Configuration:
Single
Operating Frequency:
DC to 3.5 GHz
Operating Temperature Range:
- 40 C to + 85 C
Series:
TGF
Brand:
Qorvo
Development Kit:
TGF2929-HM EVB1
Moisture Sensitive:
Yes
Product Type:
RF JFET Transistors
Factory Pack Quantity:
25
Subcategory:
Transistors
Part # Aliases:
1135635
Tags
TGF292, TGF29, TGF2, TGF
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC to 3.5 GHz, 100 W, 17.4 dB, 28 V, GaN, NI-360 Hermetic
***hardson RFPD
RF POWER TRANSISTOR
TGF2929 GaN RF Power Transistors
Qorvo TGF2929 GaN RF Power Transistors are discrete GaN on SiC HEMTs that operate from DC to 3.5GHz. They are constructed with the QGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Part # Mfg. Description Stock Price
TGF2929-HM
DISTI # 772-TGF2929-HM
QorvoRF JFET Transistors DC-3.5GHz 100W 28V Gain 17.4dB GaN
RoHS: Compliant
0
  • 25:$338.4400
TGF2929-HM-EVB
DISTI # 772-TGF2929-HM-EVB
QorvoRF Development Tools
RoHS: Compliant
0
  • 1:$875.0000
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Availability
Stock:
25
On Order:
2008
Enter Quantity:
Current price of TGF2929-HM is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
25
$338.44
$8 461.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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